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Valence surface/interfaces

The basic theories of physics - classical mechanics and electromagnetism, relativity theory, quantum mechanics, statistical mechanics, quantum electrodynamics - support the theoretical apparatus which is used in molecular sciences. Quantum mechanics plays a particular role in theoretical chemistry, providing the basis for the valence theories which allow to interpret the structure of molecules and for the spectroscopic models employed in the determination of structural information from spectral patterns. Indeed, Quantum Chemistry often appears synonymous with Theoretical Chemistry it will, therefore, constitute a major part of this book series. However, the scope of the series will also include other areas of theoretical chemistry, such as mathematical chemistry (which involves the use of algebra and topology in the analysis of molecular structures and reactions) molecular mechanics, molecular dynamics and chemical thermodynamics, which play an important role in rationalizing the geometric and electronic structures of molecular assemblies and polymers, clusters and crystals surface, interface, solvent and solid-state effects excited-state dynamics, reactive collisions, and chemical reactions. [Pg.428]

By starting from the simple and obvious fact that surfaces/interfaces cause confinement of assemblies of atoms as well as their itinerant valence electrons and that the atoms at the surface/interface find themselves in an asymmetric environment, we were able to draw some intuitive conclusions about the differences between the surface and bulk properties of one and the same piece of matter. Surface science of the past four decades has experimentally verified all these conclusions - and many more, and has thereby laid the rational basis for many modern technologies which have not only shaped our life but also seem to be of vital importance for our future. [Pg.12]

Fig. 3. The lattice-matched double heterostmcture, where the waves shown in the conduction band and the valence band are wave functions, L (Ar), representing probabiUty density distributions of carriers confined by the barriers. The chemical bonds, shown as short horizontal stripes at the AlAs—GaAs interfaces, match up almost perfectly. The wave functions, sandwiched in by the 2.2 eV potential barrier of AlAs, never see the defective bonds of an external surface. When the GaAs layer is made so narrow that a single wave barely fits into the allotted space, the potential well is called a quantum well. Fig. 3. The lattice-matched double heterostmcture, where the waves shown in the conduction band and the valence band are wave functions, L (Ar), representing probabiUty density distributions of carriers confined by the barriers. The chemical bonds, shown as short horizontal stripes at the AlAs—GaAs interfaces, match up almost perfectly. The wave functions, sandwiched in by the 2.2 eV potential barrier of AlAs, never see the defective bonds of an external surface. When the GaAs layer is made so narrow that a single wave barely fits into the allotted space, the potential well is called a quantum well.
The usual way to visualize a junction is to draw an eneigy diagram that shows the bottom of the conduction band Er and the top of the valence band Ev as a function of distance. The so-called band curvature that appears at both sides of the junction interface reveals a variation in the potential with a distance in the direction perpendicular to the junction surface. The formation of an MS barrier is depicted in Figure 14-1. [Pg.245]

In semiconductors, which have a bandgap, recombination of the excited carriers— return of the electrons from the conduction band to vacancies in the valence band—is greatly delayed, and the lifetime of the excited state is much longer than in metals. Moreover, in n-type semiconductors with band edges bent upward, excess electrons in the conduction band will be driven away from the surface into the semiconductor by the electrostatic held, while positive holes in the valence band will be pushed against the solution boundary (Fig. 29.3). The electrons and holes in the pairs produced are thus separated in space. This leads to an additional stabihzation of the excited state, to the creation of some steady concentration of excess electrons in the conduction band inside the semiconductor, and to the creation of excess holes in the valence band at the semiconductor-solution interface. [Pg.566]

Room temperature deposition of silver on Pd(lOO) produces a rather sharp Ag/Pd interface [62]. The interaction with a palladium surface induces a shift of Ag 3d core levels to lower binding energies (up to 0.7 eV) while the Pd 3d level BE, is virtually unchanged. In the same time silver deposition alters the palladium valence band already at small silver coverage. Annealing of the Ag/Pd system at 520 K induces inter-diffusion of Ag and Pd atoms at all silver coverage. In the case when silver multilayer was deposited on the palladium surface, the layered silver transforms into a clustered structure slightly enriched with Pd atoms. A hybridization of the localized Pd 4d level and the silver sp-band produces virtual bound state at 2eV below the Fermi level. [Pg.84]

More than a decade ago, Hamond and Winograd used XPS for the study of UPD Ag and Cu on polycrystalline platinum electrodes [11,12]. This study revealed a clear correlation between the amount of UPD metal on the electrode surface after emersion and in the electrolyte under controlled potential before emersion. Thereby, it was demonstrated that ex situ measurements on electrode surfaces provide relevant information about the electrochemical interface, (see Section 2.7). In view of the importance of UPD for electrocatalysis and metal deposition [132,133], knowledge of the oxidation state of the adatom in terms of chemical shifts, of the influence of the adatom on local work functions and knowledge of the distribution of electronic states in the valence band is highly desirable. The results of XPS and UPS studies on UPD metal layers will be discussed in the following chapter. Finally the poisoning effect of UPD on the H2 evolution reaction will be briefly mentioned. [Pg.112]

The nature of the final state depends upon the energy, hv, of the exciting photons. In X-ray photoelectron spectroscopy (XPS) the exciting photons are provided by sources such as A1 Ka (1,486 eV) or Mg Ka (1,253 eV) and excitation of the core electrons of the molecules is observed. In UV photoelectron spectroscopy (UPS), Hel (21.2eV) or Hell (40.8 eV) radiation is used and excitation from the valence region of the neutral molecule is observed. XPS and UPS are surface-sensitive techniques, which are capable of providing extremely useful information on the chemical nature of a surface or interface and, in the case of the XPS, the conformational state of the molecules at the surface [64]. [Pg.703]


See other pages where Valence surface/interfaces is mentioned: [Pg.393]    [Pg.38]    [Pg.256]    [Pg.445]    [Pg.428]    [Pg.268]    [Pg.1946]    [Pg.2749]    [Pg.346]    [Pg.25]    [Pg.30]    [Pg.271]    [Pg.365]    [Pg.178]    [Pg.214]    [Pg.225]    [Pg.243]    [Pg.263]    [Pg.266]    [Pg.275]    [Pg.281]    [Pg.142]    [Pg.78]    [Pg.87]    [Pg.98]    [Pg.92]    [Pg.104]    [Pg.259]    [Pg.175]    [Pg.229]    [Pg.234]    [Pg.238]   
See also in sourсe #XX -- [ Pg.121 ]




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