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Trapping and Release

In the case where there is one single trap level, E, is the energy difference between this level and the delocalized band edge, and a the ratio between the effective density of states at the delocalized band edge and the concentration of traps. If traps are energy distributed, effective values of Nt and a must be estimated. [Pg.487]


A group of scientists have studied current transients in biased M-O-M structures.271,300 The general behavior of such a system may be described by classic theoretical work.268,302 However, the specific behavior of current transients in anodic oxides made it necessary to develop a special model for nonsteady current flow applicable to this case. Aris and Lewis have put forward an assumption that current transients in anodic oxides are due to carrier trapping and release in the two systems of localized states (shallow and deep traps) associated with oxygen vacancies and/or incorporated impurities.301 This approach was further supported by others,271,279 and it generally resembles the oxide band structure theoretically modeled by Parkhutik and Shershulskii62 (see. Fig. 37). [Pg.484]

Riter LS, Charles L, Turowski M, Cooks RG (2001) External interface for trap-and-release membrane introduction mass spectrometry applied to the detection of inorganic chloramines and chlorobenzenes in water. Rapid Commun Mass Spectrom 15 2290-2295... [Pg.136]

The observed saturation may be due to the dynamic balance between trapping and release of charge carriers as the xerographic cycle is repeated. As an alternative variant, it may be due to the filling of the deep trap population so that the saturated residual potential is given by... [Pg.92]

Physical Properties. The size, molecular weight, and vapor pressure determine the pore size necessary to trap and release a substance efficiently. Large molecules such as pesticides cannot be collected and recovered on molecular sieves nor will small molecules like gaseous hydrocarbons be retained well by porous polymers. [Pg.181]

The core development of MIMS has centered upon MS ionization techniques for the analysis of aromatic contaminants in water,47 improving membrane extraction selectivity48 and enhancing MIMS sensitivity by cooling and heating the membrane (trap and release MIMS).49 50 A dedicated review has been written on the applications of MIMS in environmental analysis.51... [Pg.76]

Mendes, M.A. and M.N. Eberlin. 2000. Trace level analysis of VOCs and semi-VOCs in aqueous solution using a direct insertion membrane probe and trap and release membrane introduction mass spectrometry. Analyst 125 21-24. [Pg.92]

The reason for the divergent Xj but finite x is that the average release time from the traps is dominated by the exponentially small density of states with very large trap energies. In any measurement that involves a finite number, n, of trapping and release events, the average carrier will not fall into a trap deeper than where... [Pg.74]

Fig. 6.22. Schematic model showing the distribution of hydrogen binding energies. The more distorted Si—Si weak bonds trap hydrogen in deeper states. The dispersive hydrogen diffusion corresponds to the trapping and release from the weak bonds and Si—H bond sites (Street el at. 1988a). Fig. 6.22. Schematic model showing the distribution of hydrogen binding energies. The more distorted Si—Si weak bonds trap hydrogen in deeper states. The dispersive hydrogen diffusion corresponds to the trapping and release from the weak bonds and Si—H bond sites (Street el at. 1988a).
Figure 25.6 Hole mobility of tetracene single crystals measured at the surface (FET) and in the bulk (TOF). Both curves resemble a temperature behaviour that can be ascribed to the multiple-shallow-trapping and release of charge carriers. Parameter of the HL fits for TOF (FET)... Figure 25.6 Hole mobility of tetracene single crystals measured at the surface (FET) and in the bulk (TOF). Both curves resemble a temperature behaviour that can be ascribed to the multiple-shallow-trapping and release of charge carriers. Parameter of the HL fits for TOF (FET)...
Finally, all three electronic characterisation methods indicate deviations from the expected Hoestery-Letson behaviour at temperatures between 360 K and 400 K where the structural phase transition was identified by X-ray diffraction. The deviation of the //(r)-characteristic from the expected trapping-and-release behaviour starts at a lower temperature for the in-plane FET transport than for the SCLC or TOF transport along the surface normal. Moreover, the temperature interval where the in-plane transport is affected by structural changes amounts to at least 60 K and appears to be much broader than that for the out-of-plane transport. [Pg.559]

Figure 11. Trapping of nanoparticles inside a silicon Slot Waveguide. (a) SEM of 100 nm wide slot waveguide, (b-d) Demonstration of trapping and release of 75 nm dielectric nanoparticles from inside slot. These experiments were conducted with approximate 100 mW of excitation power at 1,550 nm. Figure 11. Trapping of nanoparticles inside a silicon Slot Waveguide. (a) SEM of 100 nm wide slot waveguide, (b-d) Demonstration of trapping and release of 75 nm dielectric nanoparticles from inside slot. These experiments were conducted with approximate 100 mW of excitation power at 1,550 nm.
Figure 12. Capture and trapping of 7,-DNA. Images show individual YOYO tagged 48 kBb X-DNA trapped and released over a 60 mn slot waveguide. Figure 12. Capture and trapping of 7,-DNA. Images show individual YOYO tagged 48 kBb X-DNA trapped and released over a 60 mn slot waveguide.
Such an observation of strong VG and T dependent EA can be explained using the multi trap and release model which assumes a semiconductor with Fermi level closer to the band edge and upon applying VG the Fermi level moves through the distribution of band tail states. As a result EA is reduced as the density of injected charge carriers are increased above the mobility edge [4, 6-11],... [Pg.156]

Iwai K, Takeuchi S (2009) A dynamic microarray with pneumatic valves for selective trapping and releasing of microbeads. In Proceedings IEEE 22nd international conference on micro electro mechanical systems, Sorrento, Italy, 25-29 January 2009, pp 371-373... [Pg.24]


See other pages where Trapping and Release is mentioned: [Pg.256]    [Pg.575]    [Pg.484]    [Pg.49]    [Pg.170]    [Pg.71]    [Pg.21]    [Pg.149]    [Pg.334]    [Pg.60]    [Pg.75]    [Pg.80]    [Pg.387]    [Pg.410]    [Pg.1367]    [Pg.3631]    [Pg.2253]    [Pg.146]    [Pg.808]    [Pg.234]    [Pg.81]    [Pg.486]    [Pg.501]    [Pg.159]    [Pg.428]    [Pg.549]    [Pg.552]    [Pg.632]    [Pg.804]    [Pg.588]    [Pg.13]    [Pg.27]    [Pg.46]   


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