Total internal reflection resonance Raman

In this chapter, electrochemical properties of ET proteins at electrode interfaces studied by spectroelectrochem-ical techniques are described. In situ spectroelectrochemical techniques at well-defined electrode surfaces are sufficiently selective and sensitive to distinguish not only steady state structures and oxidation states of adsorbed species but also dynamics of reactants, products, and intermediates at electrode surfaces on a monolayer level. The spectroelectrochemical techniques used in studies of ET proteins include IR reflection-absorption, potential-modulated UV-vis reflectance (electroreflectance), surface-enhanced Raman scattering (SERS) and surface plasmon resonance, total internal reflection fluorescence, (TIRE) and absorbance linear dichroism spectroscopies. 

The spectrum (Figure 19c) required only a short Raman collection, because shear-force controlled apertureless internal reflection Raman SNOM also creates the characteristic enhancement of the Raman reflection back to the sharp tapered fiber. Further, resonant Raman SNOM spectra of silicon (519.7 cm ) under an old (5 nm) or a freshly grown silica layer, and nomesonant Raman SNOM of these layers (500 cm ) as well as of gallium nitride (nonresonant El (TO) and E2 Raman modes at 560.8 and 570.4 cm ) on alumina (subtraction of the Raman response of support and fiber) with the shear-force apertureless technique (using 488 nm light) at total collection times of <10 min have been reported in Ref. 25. 

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