Thin films thickness determination

Thickness gaging, of steel strip, 69-71 use of cobalt-60 for, 291 Thick-target x-ray spectra, 6, 7, 99-101 Thin films, thickness determined by characteristic line intensity, 153 Thin samples, analysis by x-ray emission spectrography, 167... 

Figure 13. Schematic representation of experimental set-up for refractive index and thin film thickness determination by using the m-lines technique...

Application Example Thin Films Thickness Determination... 

The frequency dispersion of the absorption coefficient k and the refractive index n of the films of PIC long chain derivatives in J-aggregated and monomer forms were determined in the wavelength region from 500 to 650 nm. The typical value of measured thin films thickness was 20-30nm. As an illustration, the resulting spectra for two films are shown in Fig. 12. The spectra for other films were similar. One shows anomalous dispersion for n within the region of dye absorption (500-570 nm), with the values n = 3.05 and k = 0.8 at the maximum of the J-peak dispersion curve at the absorption maximum of the J-peak, n = 2.5 and fe = 1.25 for film 21 nm thick. 

Applications for ellipsometry range from the simple determination of thin films thicknesses or optical constants, monitoring reactions and film growth [37], study of plasmonic effects in meta-materials [38], to structural and optical analysis of bio-and nano-materials [39, 40]. 

Determination of thin and ultra-thin film thicknesses. 

This method normally is performed by ASTM D5307. This gas chromatography method is a quick and robust method for determining a true boiling point curve and predicting cmde yields. This external standard method is done on 5 metre fused silica columns having thin film thickness allowing... 

The effect of supporting a thin film on a substrate can also lead to a variety of (potentially catalytically reactive) surfaces being exposed by the thin film. In particular. Fig. 5.8(c) shows a heavily corrugated CaO surface, which at a particular critical thickness transforms via dislocation evolution to CaO(lOO), Fig. 5.8(d). Accordingly, this paves the way for computer aided materials design in that various substrates and thin-film thicknesses can be explored computationally to determine systems with desirable (reactive) surfaces such predictions can then be tested experimentally. 

The final step of the estimation procedure at the pore level is determination of the limiting thin film thickness corresponding to the threshold value of the capillary pressure (eq. 4) using the augmented Young-Laplace equation (3)-... 

It was observed that this oxidation was accompanied by a marked shift of the SPR minimum, which was attributed to a local change of the thickness of the film due to the repulsion between adjacent ferrocenium ions. Based on this model system, it was thus demonstrated that SECM-SPR was viable for determining local variations in thin film thickness induced by redox reactions. Here, redox conversion of surface-bound species was achieved using SECM tip-generated species and not by biasing the substrate. Hence, the interfering effect of an applied substrate potential on the SPR signal was eliminated. 

Oliver WC, Pharr GM (1992) An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J Mater Res 7(4) 1564 Oroshnik J, Croll WK (1978) Threshold adhesion failure an approach to aluminum thin-film adhesion measurement using the stylus method. In Mittal KL (ed) Adhesion measurement of thin films, thick films and bulk coatings, ASTM STP 640. American Society for Testing and Materials, West Conshohocken, p 158... 

Finally, the stmcture formation of block copolymer in thin films is determined by two factors (1) the surface drives either the orientation of the bulk morphology or the stabilization of a different one, and (2) the film thickness can be varied by interference and confinement effects, so that the stability regions between different phases are bridged. ... 

In the case of Langmuir monolayers, film thickness and index of refraction have not been given much attention. While several groups have measured A versus a, [143-145], calculations by Knoll and co-workers [146] call into question the ability of ellipsometry to unambiguously determine thickness and refractive index of a Langmuir monolayer. A small error in the chosen index of refraction produces a large error in thickness. A new microscopic imaging technique described in section IV-3E uses ellipsometric contrast but does not require absolute determination of thickness and refractive index. Ellipsometry is routinely used to successfully characterize thin films on solid supports as described in Sections X-7, XI-2, and XV-7. 

A thin film of hydrocarbon spread on a horizontal surface of quartz will experience a negative dispersion interaction. Treating these as 1 = quartz, 2 = n-decane, 3 = vacuum, determine the Hamaker constant A123 for the interaction. Balance the negative dispersion force (nonretarded) against the gravitational force to find the equilibrium film thickness. 

In X-Ray Fluorescence (XRF), an X-ray beam is used to irradiate a specimen, and the emitted fluorescent X rays are analyzed with a crystal spectrometer and scintillation or proportional counter. The fluorescent radiation normally is diffracted by a crystal at different angles to separate the X-ray wavelengths and therefore to identify the elements concentrations are determined from the peak intensities. For thin films XRF intensity-composition-thickness equations derived from first principles are used for the precision determination of composition and thickness. This can be done also for each individual layer of multiple-layer films. 

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