Thin electrical characterization

The light-emission characteristics of a white-light-emitting EL device with a doubly doped ZnS Pr,Ce,F phosphor layer have been described. It was observed that optimization of the co-doping of Ce enhances the emission characteristics compared to an EL device with a singly doped ZnS Pr,F layer.22 An electrical characterization of Ce-doped ZnS TbOF EL thin films has been reported Ce doping was seen to improve the radiative emission efficiency leading to improved performance of Ce co-doped film.23... 

In conclusion, the results presented in this chapter demonstrate the extreme versatility of AW devices for the characterization of materials. The inherent sensitivity of AW properties to the mechanical and electrical properties of thin films can be used to advantage to directly monitor a wide variety of film properties. Since the properties and behavior of thin-film materials can be very different from those of similar bulk materials, this ability to directly measure thin film properties can be a significant advantage in materials research and development. The ability to use thin films instead of bulk samples has the added advantage that the time required to perform an evaluation of dynamic processes such as diffusion and corrosion can be greatly decreased. The number of applications of AW devices to thin-film characterization continues to increase, and is limited only by the ingenuity of AW device researchers and developers. 

The synthesis and magnetic and electric characterization of finely dispersed powders and thin films of EuO Fe composite materials of various compositions were presented in [1,2]. Procedures for the fabrication of films with the different thicknesses by depositing them under conditions that meet the requirements of industrial technologies have been developed. In accordance with the X-ray data, the resulting composite films were always crystalline with the lattice parameter <2 = 0.5125-0.5140 nm, which is characteristic of EuO (B1 structure). The... 

M. D. Groner, J. W. Elam, F. H. Fabreguette, and S. M. George, "Electrical Characterization of Thin AI2O3 Films Grown by Atomic Layer Deposition on Silicon and Various Metal Substrates," Thin Solid Films, 413 (2002) 186-197. 

In order to provide the opportunity for a direct analysis of structure-property correlations, measurements of structure and properties need to be performed on the same sample. Recent work in our laboratory has focused on the study of 45°/[001] tilt grain boundaries in YBCO [10.17, 10.19, 10.58-10.60]. Thin films were deposited epitaxially, using several techniques and deposition conditions. In each case grain boundaries were introduced into predetermined patterns suitable for electrical characterization. The individual thin-film bi-epitaxial grain boundary junctions then were electrically characterized by using... 

Frisbie et al. have reported the structural and electrical characterization of two new p-channel organic semiconductors 5,5 -bis(2-tetracenyl)-2,2 -bithiophene (1) and 5,5 -bis(2-anthracenyl)-2,2 -bithiophene (2) [43]. GIXD was performed to determine the thin-film unit cell parameters of 1 and 2. Figure 4.1.9 shows the GIXD patterns (intensity vs. q y) for 1 and 2 from which the in-plane lattice parameters (a,b) and the angle between them (y) were determined. Fihns of 1 exhibited two slightly different phases as evidenced by the occurrence of several peaks in the diffraction patterns. 

Yanagisawa, H. et al., Structural and electrical characterization of pentacene films on Si02 grown by molecular beam deposition. Thin Solid Films 464 65, 398 02, 2004. 

Ta films, Al/Ta and AFTa/Al thin film stractures were deposited onto dielectric substrates using electron beam evaporation technique. The bottom A1 layer was deposited to provide an electric contact to the intermediate Ta layer during its anodic oxidation and to form more uniform structure. Upper and bottom A1 layers was then also used for electrical characterization of the structures formed by the... 

Bornand, V., Trolier-McKinstry, S. Structural and electrical characterization of heteroepittix-ial Pb(Ybi/2Nbi/2X)3-PbTi03 thin films. J. Appl. Phys. 87,3958-3964 (2000)... 

Diligenti A, Nannini A, Pennelli G et al (1996) Electrical characterization of metal Schottky contacts on luminescent porous silicon. Thin Sohd Films 276 179-182 Dimitrov DB (1995) Current-voltage characteristics of porous silicon layer. Phys Rev... 

Electrical characterization of both HCOOH sol and HNO3S0I Hf02 thin films on Si(001) wafers... 

Tu Y.L., CalzadaM.L., Phillips N.J., Milne S.J. Synthesis and electrical characterization of thin films of PT and PZT made from a diol-based sol-gel ronte. J. Am. Ceram. Soc. 1996 79 441 148 Tu Y.L., Milne S.J. A study of the effects of process variables on the properties of PZT films produced by a single-layer sol-gel techniqne. J. Mater. Sci. 1995a 30 2507-2516 Tu Y.L., Milne S.J. Characterization of single-layer PZT (53/47) films prepared from an air-stable sol-gel route. J. Mater. Res. 1995b 10 3222-3231 Tuchiya T., Itoh T., Sasaki G., Suga T. Preparation and properties of piezoelectric lead zirconate titanate thin films for microsensors and microactnators by sol-gel processing. J. Ceram. Soc. Jpn 1996 104 159-163... 

Xu Yuhuan, Cheng C.H., Mackenzie J.D. Electrical characterizations of polycrystalline and amorphous thin films of Pb(Zr cTii )03 and BaTiOs prepared by sol-gel technique. J. Non-Cryst. Solids 1994 176 1-17... 

Meneses C.T., Macedo M.A., Vicentin F.C. Li Mn204 thin films characterization by X-ray, electrical conductivity and XANES. Microelectronics J. 2003 34 561-563 Mori T, Kawano K., Oda N. High-TCR bolometer thin films by sol-gel processing. Electroceram. Jpn. Ill 2000 181-1 117-120... 

Kuila BK, Garai A, Nandi AK (2007) Synthesis, optical, and electrical characterization of organically soluble silver nanoparticles and their poly(3-hexylthiophene) nanocomposites enhanced luminescence property in the nanocomposite thin films. Chem Mater 19 5443-5452... 

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