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Thermal evaporation deposit technologies

For the formation of a metallic film in addition to thick film silk-screen technique, thin film metallization is another means for the film deposition. Deposition of thin film can be accomplished by either physical or chemical means, and thin film technology has been extensively used in the microelectronics industry. Physical means is basically a vapor deposition, and there are various methods to carry out physical vapor deposition. In general, the process involves the following 1) the planned deposited metal is physically converted into vapor phase and 2) the metallic vapor is transported at reduced pressure and condensed onto the surface of the substrate. Physical vapor deposition includes thermal evaporation, electronic beam assisted evaporation, ion-beam and plasma sputtering method, and others. The physical depositions follow the steps described above. In essence, the metal is converted into molecules in the vapor phase and then condensed onto the substrate. Consequently, the deposition is based on molecules and is uniform and very smooth. [Pg.1630]

In thin-film technology (layer thickness <1 pm), a microporous platinum layer is deposited on the already fired ceramic by thermal evaporation, sputtering, chemical vapor deposition, or electrolytic or electroless deposition. The microporosity of the thin electrode provides sufficient access of the exhaust gas to the three-phase boundary. [Pg.167]

The obtained patterned polymer surfaces can also be replicated by metal thermal evaporation to produce nanostructured metallic films with holes or asperities of controlled size, as illustrated in Fig. 11.10. After deposition of a sufficiently thick metal layer, the polymer layer can be cleaved or dissolved away. This procedure allows an efficient and precise control of the metallic surface structure, with possible applications in materials science and photonics. The roughness of polydimethylsiloxane (PDMS) surfaces can be tuned by this technique if the PDMS is treated while cross-linking, which may be of interest for microfluidic applications. We have also observed that substrates of poly(methyl methacrylate) (PMMA), PS in the form of colloidal spheres and bulk, and semiciystalline films of polyethylene (PE) are prrMie to be structured by this technique, evidencing the versatility and potential for its widespread use. It may find applications in many different scientific and technological fields like nanoUthography, microfluidics, or flexible electronics. [Pg.269]

The liquid solution CCVD process does not deposit droplets (these evaporate in the flame environment) or powders as in traditional thermal spray processes. The CCVD technology is drastically different from spray pyrolysis In spray pyrolysis, a liquid mixture is sprayed onto a heated substrate, while CCVD atomizes a precursor solution into sub-micron droplets followed by vaporization of said droplets. The resulting coating capabilities and properties described hereafter qualifies CCVD as a true vapor deposition process. For example, depositions are not line-of-sight limited and achieve epitaxy, 10 nm dielectric coatings onto silicon wafers in a Class 100 clean room resulted... [Pg.82]

For the deposition of a stoichiometric oxide film by reactive evaporation, a relatively high 02 partial pressure and a slow metal-atom condensation rate are required, so that completely oxidized metal-oxide films can be formed. The partial pressure of the reactive gas component is usually few 10 4 mbar. The significant technology of reactive evaporation [250] is applied in all cases where direct evaporation of a chemical compound is not possible because of thermal dissociation or too low a vapour pressure. In practice, oxide films are usually produced using sub-oxides or metallic starting materials. However, basically it is also possible to produce sulphides and nitrides or other compounds in this manner. [Pg.281]

Vacuum deposition (PVD technology) Process in which films are deposited by the thermal vaporization of a material in a vacuum so that particles that leave the source do not collide with gas molecules before they reach the substrate. Often used synonymously with Vacuum evaporation. [Pg.721]


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