Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Thermal annealing method

Galvanic displacement method is also often used for synthesizing catalysts. By this method, low Pt-content electrocatalysts can be obtained. For example, a carbon-supported core—shell structured electrocatalyst with bimetallic IrNi as the core and platinum monolayer as the shell has been successfully synthesized using this method. In this synthesis, IrNi core supported on carbon was first synthesized by a chemical reduction and thermal annealing method and a Ni core and Ir shell structure could be formed finally. The other advantage of this method is that the Ni can be completely encased by Ir shell, which will protect Ni dissolve in acid medium. Secondly, IrNi PtML/C core—shell electrocatalyst was prepared by depositing a Pt monolayer on the IrNi substrate by galvanic displacement of a Cu monolayer formed by under potential deposition (UPD). [Pg.94]

Lee, J.-O., Park, C., Kim, J.J., Kim, X, Park, J.W. ScYoo, K.-H. Formation of low-resistance ohmic contacts between carbon nanotube and metal electrodes by a rapid thermal annealing method. J. Phys. D Appl. Phys. 33 (2000), pp. 1953-1956. [Pg.66]

ZnTe The electrodeposition of ZnTe was published quite recently [58]. The authors prepared a liquid that contained ZnGl2 and [EMIM]G1 in a molar ratio of 40 60. Propylene carbonate was used as a co-solvent, to provide melting points near room temperature, and 8-quinolinol was added to shift the reduction potential for Te to more negative values. Under certain potentiostatic conditions, stoichiometric deposition could be obtained. After thermal annealing, the band gap was determined by absorption spectroscopy to be 2.3 eV, in excellent agreement with ZnTe made by other methods. This study convincingly demonstrated that wide band gap semiconductors can be made from ionic liquids. [Pg.304]

One advantage of the two-stage methods is control over the deposited amounts. If all the elements are electrodeposited prior to thermal annealing, for instance, coulometry can be used to account for the amounts deposited and thus help control the stoichiometry of the resulting film. The annealing... [Pg.98]

Figure 26 AFM micrograph of DLC film on Ir(lOO) prepared by IBD method (100 eV followed by thermal annealing at 600 °C under He gas environment. After annealing, DLC film suffered from blistering because of immiscibility between C and Ir. Size of the micrograph is 9.85 x 9.85 pm. ... Figure 26 AFM micrograph of DLC film on Ir(lOO) prepared by IBD method (100 eV followed by thermal annealing at 600 °C under He gas environment. After annealing, DLC film suffered from blistering because of immiscibility between C and Ir. Size of the micrograph is 9.85 x 9.85 pm. ...
Practical laser processing of materials involves a batch of procedures, each of which has its own requirements preparation of the initial material (with parameters customized for the intended fabrication method), its proper optical exposure, and post-processing aimed at developing or refining the exposed material (e.g., thermal annealing, chemical development, or etching). [Pg.160]

Historically thermal annealing has been the method of removing implantation damage. Recently however, laser annealing has been pursued as an attractive alternative. Tsien, et al. [Pg.243]

FePt C nanocluster films were prepared with a multilayer method in which FePt cluster layers and C layers were alternately deposited onto a Si substrate. C served to isolate the clusters and to avoid cluster-aggregation during thermal annealing. The average FePt cluster size is about 4.5 nm. The nominal thickness of each cluster layer is about 1 nm, so that the FePt clusters can be well separated with C layer. The thickness of C layer was adjusted with C volume fraction changing from 7 to 45 % [48],... [Pg.224]

It has been shown that in some polymers the effect of e+ exposure on I3 is completely reversible if the samples are annealed at temperatures near or above their Tg s. This implies that in thermal studies, methods should be developed... [Pg.274]

To produce fullerenes and metallofullerenes, a temperature above 800 °C was found to be necessary, and below this critical temperature no fullerenes were produced (Haufler et al., 1991 Suzuki et al., 1997a Wakabayashi et al., 1997), suggesting that relatively slow thermal annealing processes are required to form fullerenes and metallofullerenes. The laser-furnace method is suited to the study of growth mechanism of fullerenes and metallofullerenes (Curl and Smalley, 1991 Haufler et al., 1991 ... [Pg.102]

Recently, Boilot et al. utilized sol-gel method as the subsequent annealing treatment for the preparation of YV04 Eu " NPs (Mialon et al., 2008). At room temperature, water-phase precipitation always produced inorganic NPs with low crystallinity, so the author re-dispersed the crude YV04 Eu + NPs into a polymeric silica sol for sol-gel thermal annealing. The silica matrix could prevent the aggregation and growth of NPs even... [Pg.366]


See other pages where Thermal annealing method is mentioned: [Pg.190]    [Pg.23]    [Pg.16]    [Pg.198]    [Pg.226]    [Pg.297]    [Pg.283]    [Pg.190]    [Pg.23]    [Pg.16]    [Pg.198]    [Pg.226]    [Pg.297]    [Pg.283]    [Pg.350]    [Pg.132]    [Pg.165]    [Pg.72]    [Pg.68]    [Pg.63]    [Pg.177]    [Pg.56]    [Pg.595]    [Pg.77]    [Pg.251]    [Pg.266]    [Pg.305]    [Pg.835]    [Pg.841]    [Pg.88]    [Pg.122]    [Pg.203]    [Pg.156]    [Pg.350]    [Pg.134]    [Pg.374]    [Pg.150]    [Pg.149]    [Pg.151]    [Pg.300]    [Pg.587]    [Pg.149]    [Pg.474]    [Pg.369]   


SEARCH



Annealing methods

Annealing thermal

© 2024 chempedia.info