Temperature nanotube

Fig. 4. Static magnetic susceptibility vs temperature. Nanotubes with the magnetic field perpendicular to the tubes (+), parallel to the tubes (o), unprocessed CNT-containing material (x) and planar graphite (solid line) [31],...

Whereas multi-wall carbon nanotubes require no catalyst for their growth, either by the laser vaporization or carbon arc methods, catalyst species are necessary for the growth of the single-wall nanotubes [156], while two different catalyst species seem to be needed to efficiently synthesize arrays of single wall carbon nanotubes by either the laser vaporization or arc methods. The detailed mechanisms responsible for the growth of carbon nanotubes are not yet well understood. Variations in the most probable diameter and the width of the diameter distribution is sensitively controlled by the composition of the catalyst, the growth temperature and other growth conditions. 

As the nanotube diameter increases, more wave vectors become allowed for the circumferential direction, the nanotubes become more two-dimensional and the semiconducting band gap disappears, as is illustrated in Fig. 19 which shows the semiconducting band gap to be proportional to the reciprocal diameter l/dt. At a nanotube diameter of dt 3 nm (Fig. 19), the bandgap becomes comparable to thermal energies at room temperature, showing that small diameter nanotubes are needed to observe these quantum effects. Calculation of the electronic structure for two concentric nanotubes shows that pairs of concentric metal-semiconductor or semiconductor-metal nanotubes are stable [178]. 

Early transport measurements on individual multi-wall nanotubes [187] were carried out on nanotubes with too large an outer diameter to be sensitive to ID quantum effects. Furthermore, contributions from the inner constituent shells which may not make electrical contact with the current source complicate the interpretation of the transport results, and in some cases the measurements were not made at low enough temperatures to be sensitive to 1D effects. Early transport measurements on multiple ropes (arrays) of single-wall armchair carbon nanotubes [188], addressed general issues such as the temperature dependence of the resistivity of nanotube bundles, each containing many single-wall nanotubes with a distribution of diameters d/ and chiral angles 6. Their results confirmed the theoretical prediction that many of the individual nanotubes are metallic. 

Fig. 23. Experimental room temperature Raman spectrum from a sample consisting primarily of bundles or ropes of single-wall nanotubes with diameters near that of the (10,10) nanotube. The excitation laser wavelength is 514.5 nm. The inset shows the lineshape analysis of the vibrational modes near 1580 cm . SWNT refers to singlewall carbon nanotubes [195].

Fig. 25. Room temperature Raman spectra for purified single-wall carbon nanotubes excited at five different laser wavelengths, showing evidence for the resonant enhancement effect. As a consequence of the ID density of states, specific nanotubes (n, m) are resonant at each laser frequency [195].

Theoretical studies indicate that for dt < 2 nm the effect of strain energy exceeds that of the room temperature thermal energy, so that it is only at small nanotube diameters that the strain energy associated with nanotube... 

Defects in arc-grown nanotubes place limitations on their utility. Since defects appear to arise predominantly due to sintering of adjacent nanotubes in the high temperature of the arc, it seemed sensible to try to reduce the extent of sintering by cooling the cathode better[2]. The most vivid assay for the extent of sintering is the oxidative heat purification treatment of Ebbesen and coworkers[7], in which amorphous carbon and shorter nanoparticles are etched away before nanotubes are substantially shortened. Since, as we proposed, most of the nanoparticle impurities orig-... 

In the absence of an electric field, the dome-closed conformation must be the most stable tip structure, even when spot-welds are considered, since only the perfectly dome-closed tip has no dangling bonds (i.e., it is a true hemifullerene). At the 3000°C temperature of the arc, the rate of tip annealing should be so fast that it is sure to find its most stable structure (i.e., to close as a dome). Clear evidence of this facile closure is the fact that virtually all nanotubes found in the arc deposit are dome-closed. (Even stronger evidence is the observation of only dome-closed nanotubes made at 1200°C by the oven laser vaporization method.) Such considerations constituted the original motivation for the electric field hypothesis. 

Fig. 11. The loss of carbon rapidly increases with the increase of temperature. Heating of the catalysts in open air for 30 minutes at 973 K leads to the total elimination of carbon from the surface. The gasification of amorphous carbon proceeds more rapidly than that of filaments. The tubules obtained after oxidation of carbon-deposited catalysts during 30 minutes at 873 K are almost free from amorphous carbon. The process of gasification of nanotubules on the surface of the catalyst is easier in comparison with the oxidation of nanotubes containing soot obtained by the arc-discharge method[28, 29]. This can be easily explained, in agreement with Ref [30], by the surface activation of oxygen of the gaseous phase on Co-Si02 catalyst.

Song et al. [16] reported results relative to a four-point resistivity measurement on a large bundle of carbon nanotubes (60 um diameter and 350 tm in length between the two potential contacts). They explained their resistivity, magnetoresistance, and Hall effect results in terms of a conductor that could be modeled as a semimetal. Figures 4 (a) and (b) show the magnetic field dependence they observed on the high- and low-temperature MR, respectively. 

Fig. 5. Electrical resistance as a function of the temperature at the indicated magnetic fields for a single microbundle of carbon nanotubes. The solid line is a fit using the two-band model for graphite (see inset) with an overlap A = 3.7 meV and a Fermi level right in the middle of the overlap (after Langer et at. l9 ).

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