Temperature capacitance

Su, L. H., Z. W. Song, L. H. Lu, and G. L. Pang. 2013. Improving the low-temperature capacitance of CoNiAl three-component layered double hydroxide in a redox electrolyte. Materials Research Bulletin 48 3636—3639. 

Su, L., L. Gong, H. Lii, and Q. Xii. 2014. Enhanced low-temperature capacitance of MnOj nanorods in a redox-active electrolyte. Journal of Power Sources 248 212-217. 

Fig. 21 Room-temperature capacitance-frequency characteristics, a MIM and MIS structure devices (with applied a.c. voltage of 0.5 V). b,c Tan (8)-frequency characteristics (b) and quasi-static capacitance-electric field curves (c) for the MIS stractures (at 66 Hz) at different sweep/scan rate (dVoM/dt) as indicated. Larger hysteresis with slower scan rates ace found. (Reproduced with permission from Elsevier and [39])...

Due to thermal effects such devices must operate at temperatures well below the electron charging energy of 2C. With state-of-the-art fabrication technology, the capacitance is typically of the order 10 F, which requires temperatures below 1 K. Even with further miniaturisation, it is unlikely that these devices will be feasible at room temperature. Even so, there has been work in modeling this type of device for use in digital circuits (73). 

Sohd tantalum capacitors have a high volumetric capacitance which makes them attractive for use in miniaturized electronic systems like cellular telephones, hand-held video cameras, and personal computers. The insensitivity of their capacitance to temperature and their abiUty to operate at temperature extremes explains why these devices are used in such harsh environments as automobile engine compartments. Sohd tantalum capacitors are extremely rehable and, therefore, are often the capacitor of choice in critical appHcations like spacecraft electronics, pacemakers, and safety equipment. 

Compensation of the measured value for other process conditions, such as compensating the output of a capacitance level transmitter for variations in process temperature. 

For LT units 2% of its capacitance value For HT units The two test values should be corrected to the same reference of dielectric temperature, say, 20°C or as agreed. The difference between tbe two test values should be less than an amount corresponding to either breakdown of an element or operation of an internal fuse. 

A key factor in the suitabihty of cokes for graphite production is their isotropy as determined by the coefficient of thermal expansion. After the calcined coke was manufactured into graphite, the axial CTE values of the graphite test bars were determined using a capacitance bridge method over a temperature range of 25 to 100°C. The results are summarized in Table 24. Also included in the table are bulk density measurement of calcined cokes and the resistivity values of their graphites. 

Heat flows from a heat source at temperature 6 t) through a wall having ideal thermal resistance Ri to a heat sink at temperature 62(1) having ideal thermal capacitance Ct as shown in Figure 2.14. Find the differential equation relating 6 t) and 02(0-... 

The thermal strain measurements were made in a low-temperature, high-resolution, three-terminal, capacitance dllatometer identical to the design of White and Collins."... 

Figure 4. Thennal strain for a single-crystal Nio625Alo 3 5 alloy measured on cooling along three (lOO directions in a capacitance dilatometer. The inset shows in detail the data in the temperature range 100-250K (From reference 6)...

The specimen may be a sheet of any size convenient to test, but should have uniform thickness. The test may be run at standard room temperature and humidity, or in special sets of conditions as desired. In any case, the specimens should be preconditioned to the set of conditions used. Electrodes are applied to opposite faces of the test specimen. The capacitance and dielectric loss are then measured by comparison or substitution methods in an electric bridge circuit. From these measurements and the dimensions of the specimen, dielectric constant and loss factor are computed. 

A general method of estimating the temperature distribution in a body of any shape consists of replacing the heat flow problem by the analogous electrical situation and measuring the electrical potentials at various points. The heat capacity per unit volume C.,p is represented by an electrical capacitance, and the thermal conductivity k by an... 

The Hg/V-methylformamide (NMF) interface has been studied by the capacitance method as a function of temperature.108,294,303 The potential of Hg was measured with respect to the reference electrode Ag/0.05 M AgC104 + 0.05 M NaC104 in water. The specific adsorption of C104 was found to be negligible at a < 6 /iC cm"2. The experimental capacitance data have been discussed in terms of the four-state model,121,291,294 which assumes the presence of both monomers and clusters in the surface layer of the solvent. The model has been found to describe the experimental picture qualitatively but not quantitatively. This is related to the fact that NMF is a strongly associated solvent.108,109,294,303... 

The Hg/dimethyl formamide (DMF) interface has been studied by capacitance measurements10,120,294,301,310 in the presence of various tetraalkylammonium and alkali metal perchlorates in the range of temperatures -15 to 40°C. The specific adsorption of (C2H5)4NC104 was found to be negligible.108,109 The properties of the inner layer were analyzed on the basis of a three-state model. The temperature coefficient of the inner-layer potential drop has been found to be negative at Easo, with a minimum at -5.5 fiC cm-2. Thus the entropy of formation of the interface has a maximum at this charge. These data cannot be described... 

The Hg/dimethyl sulfoxide (DMSO) interface has been studied by electrocapillary and capacitance measurements in a range of temperatures.291,304 Eamo was measured using the streaming electrode method. All potentials were recorded in a nonisothermal cell against a 0.1 M NaCl calomel electrode (CE) in water at 25°C. The potential difference of the cell CE/0.1 M NaC104 (aq.)/0.1 M NaC104 (DMSO)/CE was -0.096 V. This value was used to recalculate the data.312... 

The temperature dependence of the inner-layer properties has been studied by Vaartnou etal.m m over a wide interval, -0.15°C < T< 50°C. The inner-layer integral capacitance Kh a curves have been simulated using the Parsons308 and Damaskin672,673 models. The experimental Kj, T dependence has a minimum at T = 20°C. The influence of the potential drop in the metal phase has been taken into account. 

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