Sputtering discussion

Also of note is the fact that this form of sputtering is insensitive to the charge of the incoming primary ion beam. This is in contrast to the strong charge sensitivity noted for potential sputtering (discussed in Section 3.2.1.2). 

Another important consideration for providing uniform implantation involves the geometry of the ion beam with respect to the target surface. Too high an angle from normal incidence leads to excessive sputtering and low retained dose. These issues and others pertinent to practical aspects of implantation treatment have been discussed (35,165). 

A discussion of the motivation behind doing sputtered neutral analysis versus SIMS, plus a description of the first prototype SALI instrument. A well written introduction for someone without previous surface analysis experience it also includes an historical overview of the various post-ionization techniques. 

An introduction to the principles behind SPI-SALI, this ankle presents a theoretical discussion of why SPI-SALI is much less fragmenting than MPI-SALI. Examples are shown which describe the additional fragmentation induced by the desorption beam—in this case ESD is compared to ion sputtering. The main focus of the article is the advantages of SPI-SALI for surface analysis of bulk organic polymers. 

In this last chapter we cover techniques for measuring surfece areas, surfece roughness, and surface and thin-fdm magnetism. In addition, the effects that sputter-induced surface roughness has on depth profiling methods are discussed. 

For the analysis of surfaces there are a group of ion bombardment techniques based on sputtering processes described in Ref 30 Since the spectra obtained consists mainly of adsorbed gases and radicals, these techniques are omitted from this discussion... 

Our approach is similar to that employed in research of free cluster ions in the gas phase, where various measurements are conducted on the cluster which is mass selected out of the size-distributed clusters generated by laser sputtering. Based on the chemical compositions of the isolated MFCs, we discuss the determining factors of core size in connection with the formation processes. Some core-size dependent properties of the MFCs are also presented. 

A wide variety of process-induced defects in Si are passivated by reaction with atomic hydrogen. Examples of process steps in which electrically active defects may be introduced include reactive ion etching (RIE), sputter etching, laser annealing, ion implantation, thermal quenching and any form of irradiation with photons or particles wih energies above the threshold value for atomic displacement. In this section we will discuss the interaction of atomic hydrogen with the various defects introduced by these procedures. 

During the search for 36C1 at Rochester, 5-13 pA of Cl ions were produced from silver chloride in the cesium sputter source. The detection techniques were basically similar to those discussed for 14C. The samples and the results obtained are given in Table 2. 

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