Sputtering deposited energy

Ohmori T, Go H, Yamaguchi N, Nakayama A, Mametsuka H, Suzuki E (2001) Photovoltaic water electrolysis using the sputter-deposited a-Si/c-Si solar cells, Int J Hydrogen Energy 26 661-664... 

Thick Film Example. As the peaks become thicker the possibility of interference of the distributions from two or more of the elements is also increased. This is particularly true for heavier elements which inherently appear closer together in terms of the energy of the scattered ions. A particularly difficult example of this situation is shown in Figure 2, again for a sputter-deposited solid lubricant film, in this case a thicker layer on a steel substrate. Figure 2... 

During an interface experiment, an overlayer is stepwise deposited onto a substrate. By monitoring the substrate and overlayer core-level binding energies during deposition, the evolution of the valence band maxima of the substrate and of the overlayer can be followed during interface formation [33-36], The procedure is outlined in Fig. 4.3. As will be shown in Sects. 4.2.3.3 and 4.3.3, care has to be taken when applying this standard procedure to study surfaces and interfaces of sputter-deposited ZnO films, as BEvb(CL) depends on the deposition parameters for this material. 

Fig. 4.7. Aluminium content of sputter deposited ZnO Al films. A target with a nominal A1 content of 2wt% has been used. The shadowed regions indicate the general behavior. The atomic concentration is calculated with and without considering the high binding energy oxygen species, which contributes to the O Is signal (see Sect. 4.2.2.2)...

Fig. 4.16. Comparison of He II (hv = 48.86 eV) valence band spectra of sputter deposited undoped (left) and Al-doped (right) ZnO films. Different curves belong to different sputter conditions as substrate temperature and oxygen partial pressure. The binding energies of the spectra were shifted for better comparison of shapes of...

Following these studies, a microstructure of sputter-deposited ZnO films on polycrystalline CdS substrates is outlined in Fig. 4.21. The different evolution of the Zn 2p and O Is binding energies can consequently be attributed to the amorphous ZnO nucleation layer with a different chemical bonding between Zn and O. The model is also valid for polycrystalline In2S3 and Cu(In,Ga)Se2 substrates and for deposition of (Zn,Mg)0 films, as these show the same behavior (see Figs. 4.20 and 4.24). It is not clear whether an amorphous nucleation layer occurs also when the ZnO is deposited by other techniques as MBE, CVD, or PLD, as no data are available for such interfaces. In addition, the influence of the polycrystallinity of the substrates is not clear so far. 

I112S3 or I112S3 containing compounds are possible alternatives for the CdS buffer layer in Cu(In,Ga)Se2 thin-film solar cells [120,145-148], The In2S3 layers are prepared by various techniques as chemical bath deposition [145], thermal evaporation [146], atomic layer deposition (ALD) [147], and magnetron sputtering [148], Energy conversion efficiencies above 16% have been... 

With more reactive polymer surfaces such as with carboxylic acid group in PET, A1 deposited atoms can react with the polymer surface and produce thick chemical interface whatever their deposit energy. By contrast no chemical interaction is observed between deposited Au and silicone substrate for either sputtering or evaporation. These observations open a quite exciting investigation field where the chemical properties of the interface at an atomic level should be studied by controling the important parameters of the metallization such as deposition energy, reactivity of the substrate, reactivity of the metal atoms... and correlated with macroscopic properties such adhesion tests. 

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