Sputter

After a heat treatment of several hours the electrodes are deposited by sputtering a 50 nm base layer of Ni/Cr or NiAVi followed by 1.5 pm Au-layer generated by galvanization. 

Ions are also used to initiate secondary ion mass spectrometry (SIMS) [ ], as described in section BI.25.3. In SIMS, the ions sputtered from the surface are measured with a mass spectrometer. SIMS provides an accurate measure of the surface composition with extremely good sensitivity. SIMS can be collected in the static mode in which the surface is only minimally disrupted, or in the dynamic mode in which material is removed so that the composition can be detemiined as a fiinction of depth below the surface. SIMS has also been used along with a shadow and blocking cone analysis as a probe of surface structure [70]. 

Figure Bl.17.8. Iron oxide particles coated with 4 nm of Pt in an m-planar magnetron sputter coater (Hennann and Mtiller 1991). Micrographs were taken in a Hitachi S-900 in-lens field emission SEM at 30,000 primary magnification and an acceleration voltage of 30 kV. Image width is 2163 nm.

The fonnation of clusters in the gas phase involves condensation of the vapour of the constituents, with the exception of the electrospray source [6], where ion-solvent clusters are produced directly from a liquid solution. For rare gas or molecular clusters, supersonic beams are used to initiate cluster fonnation. For nonvolatile materials, the vapours can be produced in one of several ways including laser vaporization, thennal evaporation and sputtering. 

The deposition of amoriDhous hydrogenated silicon (a-Si H) from a silane plasma doped witli diborane (B2 Hg) or phosphine (PH ) to produce p-type or n-type silicon is important in tlie semiconductor industry. The plasma process produces films witli a much lower defect density in comparison witli deposition by sputtering or evaporation. 

Harper J M E, Cuomo J J and Kaufman H R 1982 Technology and applications of broad-beam ion sources used in sputtering. Part II. Applications J. Vac. Sc/. Technol. 21 737-56... 

Barish E L, Vitkavage D J and Mayer T M 1985 Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy J. AppL Phys. 57 1336-42... 

Sigmund P 1969 Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets Phys. Rev. 184 383-416... 

Thompson M W II 1968 The energy spectrum of e]ected atoms during the high energy sputtering of gold Phil. Mag. 18 377-414... 

Feil H, Dieleman J and Garrison B 1993 Chemical sputtering of Si related to roughness formation of a Cl-passivated Si surface J. Appi. Phys. 74 1303-9... 

Barone M E and Graves D B 1995 Chemical and physical sputtering of fluorinated silicon J. Appi. Phys. 77 1263-74... 

Back-sputtering Backswept turbine Backus process BaC12... 

Ion-beam lithography Ion beam mixing Ion beam processing Ion beams Ion-beam sputtering Ion channels Ion chromatogram Ion chromatography... 

Sputtered Co-Cr films Sputtered hard disks Sputtering... 

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