Silicone electrical properties

Silicone rubbers have excellent ozone and weathering resistance, good electrical properties, and good adhesion to metal. 

Oxygen also dissolves in the silicon crystal lattice, forming SiO which may radically affect the electrical properties of the silicon. Oxygen is usually unintentionally introduced during the crystal-growing operation in concentrations up to the solubility limit (ca 2.5 x 10 atoms/cm ). When... 

Table 9. Electrical Properties of Typical Silicone Rubber ...

Silicone rubbers find use because of their excellent thermal and electrical properties, their physiological inertness and their low compression set. Use is, however, restricted because of their poor hydrocarbon oil and solvent resistance (excepting the fluorosilicones), the low vulcanisate strength and the somewhat high cost. 

The electrical properties (dark conductivity and photoconductivity) are reported to first decrease and then increase upon increasing power [361]. The optical bandgap increases with increasing power, due to the increase of the hydrogen content [63, 82, 362, 363]. However, at very high power levels, microcrystalline silicon is formed [364], which causes the hydrogen content (and, consequently, the bandgap) to decrease. 

In this sub-subsection, the Er doping of amorphous silicon is discussed. The problem of limited solubility of Er in crystalline silicon has been circumvented. However, the electrical properties of pure a-Si are poor compared to c-Si. Therefore, hydrogenated amorphous silicon is much more interesting. Besides, the possibility of depositing a-Si H directly on substrates, i.e., optical materials, would make integration possible. Both low-pressure chemical vapor deposition (LPCVD) [664] and PECVD [665, 666] have been used to make the a-Si H into which Er is implanted. In both methods oxygen is intentionally added to the material, to enhance the luminescence. 

Guerin D, Merckling C, Lenfant S, Wallart X, Pleutin S, Vuillaume D (2007) Silicon-mo-lecules-metal junctions by transfer printing chemical synthesis and electrical properties. J Phys Chem C 111 7947-7956... 

Guerin D, Lenfant S, Godey S, Vuillaume D (2010) Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate. J Mater Chem 20 2680-2690... 

A turning point in the study of amorphous semiconductors was reached with the discovery that the addition of hydrogen to amorphous silicon could dramatically improve the material s optical and electrical properties. Unlike pure amorphous silicon, which is not photoconductive and cannot be readily doped, hydrogenated amorphous silicon (a-Si H) displays a photoconductive gain of over six orders of magnitude and its dark conductivity can be changed by over ten orders of magnitude by n-type or p-type... 

The diffusion of hydrogen in highly or lightly silicon doped GaAs induces a modification of the electrical properties of the material a reduction of the free electron concentration (Fig. 2) and a significant increase of the electron mobility up to values close to the mobility in nonhydrogenated materials with the same net carrier concentration (Jalil et al., 1986 Pan... 

G.E. Jellison, Jr., Optical and Electrical Properties of Pulsed Laser-Annealed Silicon R.F. Wood and G.E. Jellison, Jr., Melting Model of Pulsed Laser Processing R.F. Wood and F.W. Young, Jr., Nonequilibrium Solidification Following Pulsed Laser Melting... 

Y. Hong, J.-Y. Nahm, and J. Kanicki, Opto-electrical properties of 200 dpi four amorphous silicon thin-film transistors active-matrix organic polymer light-emitting display, Appl. Phys. Lett., 83, 3233-3235, 2003. 

If the wafer is not fixed in the cell, a mechanical wafer support is advisable. The ohmic contact can be an integral part of such a sample fixture, as shown in Fig. 1.5 a. During formation of mesoporous silicon on highly doped substrates at low bias (0-1.5 V), it was found that such a contact can even be immersed into the electrolyte without a significant degradation of its electrical properties. It is remarkable that mesoporous silicon formation takes place under the contact, too, without significant degradation of the contact properties. 

Anodic oxidation is a very common process in the electrochemical industry, used for example in the manufacture of aluminum and tantalum capacitors. The anodic oxidation of silicon is not of comparable importance, because the electrical properties of anodic oxides are inferior to those of thermal oxides. 

Polysiloxanes, also called silicones, are characterized by combinations of chemical, mechanical, and electrical properties which taken together are not common to any other commercially available class of polymers. They exhibit relatively high thermal and oxidative stability, low power loss, high dielectric strength, and unique rheological properties, and are relatively inert to most of the ionic reagents. Almost all of the commercially utilized siloxanes are based on polydimethylsiloxane with trimethylsiloxy end groups. They have the widest use... 

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