Silicon current-voltage characteristics

To make the entire eleetronic response linear with respect to tunneling gap s, a logarithmic amplifier is attached at the output of the current amplifier. A logarithmic amplifier can be made from a feedback amplifier, by replacing the feedback resistor with a diode, as shown in Fig. 11.4. The current-voltage characteristics of a good-quality, forward-biased silicon diode follow an exponential law over more than five orders of magnitude ... 

Fig. 8. Current-voltage characteristics of two hypothetical devices of identical physical size. The gallium arsenide curve rises faster and reaches peak velocity faster than the silicon. This means that the group III-V (13-15) electrons produce significantly faster operating times in microchips. (AT T Technology)...

Fig. 8. Current-voltage characteristic of a p-i-n cell fabricated on a glass substrate r]= 10.1%, area = 1.09 cm2. Vx = 0.84 V, Jm — 1.78 mA cm-2, FF = 0.676, illumination = 98.62 mW cm-2, T= 25.7°C. [From Catalano et al., Attainment of 10% conversion efficiency in amorphous silicon solar cells. Conf. Rec. IEEE Photovoltaic Spec. Conf., Vol. 16, 1982 IEEE.]...

The description of the current-voltage characteristics is essentially the same as for the equivalent crystalline silicon devices, with some modifications to account for the localized states near the band edges. The accumulation charge, Q/, per unit area of channel is... 

Fig. 10.8 Current-voltage characteristics of a polypyrrole/n-silicon diode.

The data of Efimov and Erusalimchik (5) shown in Fig.l give an example of the different current-voltage characteristics obtained with various resistivity n- and p-type germanium electrodes made anode in 0.1 N HC1. Brattain and Garrett (4) and others (7-10), however, found much lower saturation current densities by one to two orders of magnitude with n-type germanium made anode in similar electrolytes. Similar curves for n-type silicon would show saturation current densities in the order of microamperes per square centimeter. 

Figure 5.28 Current-voltage characteristic of field emission from a nanodiamond particle on a silicon substrate doped with nitrogen. The turn-on field intensity (attainment of a 0.1 iA current) is 3.2Vpm", and at 5Vpm" a current density of about 95 mAcm" is attained ( Elsevier 2000).

FIGURE 2-16 Current-voltage characteristics of a silicon semiconductor diode. (For clarity the small current under reverse bias before breakdown has been greatly exaggerated.)... 

Silicon nanostructures can be obtained in acidic fluoride-containing media or in alkaline solution at potentials negative from open circuit potential. The (photo) current-voltage characteristic of Si in fluoride-containing electrolytes reveals a series of phenomena which have attracted considerable attention in chemistry, physics, and solar energy conversion. Figure 2.39 provides an overview of these processes for both n- and p-type Si. The I-Vcurve is characterized by two maxima and periodic variations at higher applied anodic potential. These photocurrent... 

All current-voltage characteristics of the photovoltaic devices were measured with a source measure imit in the dark and under simulated solar simulator source was calibrated using a standard crystalline silicon diode. The ciurent-voltage characteristics of Photovoltaic devices are generally characterized by the short-circuit current (/ ), the open-circuit voltage (F ), and the fill factor (FF). The photovoltaic power conversion efficiency (rj) of a solar cell is defined as the ratio between the maximum electrical power and the incident optical power and is determined byEq.(l)[4]. 

Fig. 5.37. Current voltage characteristic at various temperatures of evaporated silicon oxide films (after Servini and Jonscher (1969)).

Koshida N, Nagasu M, Sakusabe T, Kiuchi Y (1985) The current voltage characteristics of a photoelectrochemical cell using p-type porous silicon. J Electrochem Soc 132(2) 346-349 Koshida N, Nagasu M, Echizenya K, Kiuchi Y (1986) Impedance spectra of p-type porous Si-electrolyte interfaces. J Electrochem Soc 133(11) 2283-2287 Mamykin AI, Moshnikov VA, Ilin AY (1998) Magnetic resonance spectroscopy of porous quantum-size structures. Semiconductors 32(3) 322-324... 

Diligenti A, Nannini A, Pennelli G et al (1996) Electrical characterization of metal Schottky contacts on luminescent porous silicon. Thin Sohd Films 276 179-182 Dimitrov DB (1995) Current-voltage characteristics of porous silicon layer. Phys Rev... 

Simons AJ, Cox TI, Uren MJ et al (1995) The electrical properties of porous silicon produced from n + silicon substrates. Thin Solid Films 255 12-15 Skryshevsky VA, Strikha VI, Mamikin AV et al (1998) Availability of current -voltage characteristics for porous silicon gas sensors, Discrete gas sensor. Paper presented at eorosensors XII13-16 Sept 277-280... 

Field emission measurement was carried out on the ZnO nanorods array grown on silicon, as shown in Figure 5.7(a). The experiments were performed in a vacuum chamber with a base pressure of 1 x 10 Torr. The distance between an indium tin oxide anode and the sample is 150 pm. The measured emission area is 0.20 cm. The emission current-voltage characteristics are analyzed using the... 

For n-type silicon under illumination, the current-voltage curves are dependent on illumination intensity, as shown in Fig. 40. At high illumination intensity, the eur-rent-voltage curves exhibit two current peaks, as seen for p-type silicon. At lower illumination intensities the photocurrent is limited by the supply of photogenerated holes and exhibits a characteristic plateau. 

Due to the technological importance of metal-insulator-semiconductor (MIS) devices, understanding of the nature of their electrical characteristics such as current-voltage (1-V) and tunnel magnetoresistance (TMR) is of great interest. Unless intentionally fabricated, a silicon Schottky diode possesses a thin interfacial oxide layer between the metal and the semiconductor. Additionally, a density of interface states is always generated at the boundary between the semiconductor and insulator. 

Figure 7.9 (a) Comparison of current density-voltage characteristics for a high-efficiency silicon solar... 

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