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Siliceous substrates silicone

Zhao and Brittain [280-282] reported the LCSIP of styrene on planar silicon wafers using surface modifications of 2-(4-(ll-triethoxysilylundecyl)phenyl-2-methoxy-propane or 2-(4-trichlorosilylphenyl)-2-methoxy-d3-propane respectively. Growth of PS brushes from these SAMs has been successfully achieved factors that influence PS thickness included solvent polarity, additives and TiC concentration. Sequential polymerization by monomer addition to the same silicate substrate bearing the Hving polymer chains resulted in thicker PS films. FTIR-ATR studies using a deuterated initiator indicated that the initiator efficiency is low, and the... [Pg.421]

It is known that organosilicon compounds attach themselves outstandingly to silicate substrates, but not always to calcium carbonate [19, 20]. A surprising finding was that polymeric silicones attach... [Pg.840]

The novel mechanism by which these glassy materials are formed involves movement of silicon from the substrate across the Interface to the carbonaceous skeleton of the treated cotton The migration in solid states occurs at temperatures considerably below the melting point of either the siliceous substrate or polymeric plumbous oxide The relatively low temperature of the process suggests that interpenetration by the silicon occurs by an interstitial mechanism ... [Pg.153]

Tetravalent silicon is the only structural feature in all silicon sources in nature, e.g. the silicates and silica even elemental silicon exhibits tetravalency. Tetravalent silicon is considered to be an ana-logon to its group 14 homologue carbon and in fact there are a lot of similarities in the chemistry of both elements. Furthermore, silicon is tetravalent in all industrially used compounds, e.g. silanes, polymers, ceramics, and fumed silica. Also the reactions of subvalent and / or low coordinated silicon compounds normally lead back to tetravalent silicon species. It is therefore not surprising that more than 90% of the relevant literature deals with tetravalent silicon. The following examples illustrate why "ordinary" tetravalent silicon is still an attractive field for research activities Simple and small tetravalent silicon compounds - sometimes very difficult to synthesize - are used by theoreticians and preparative chemists as model compounds for a deeper insight into structural features and the study of the reactivity influenced by different substituents on the silicon center. As an example for industrial applications, the chemical vapor decomposition (CVD) of appropriate silicon precursors to produce thin ceramic coatings on various substrates may be mentioned. [Pg.21]

Many theories on the formation mechanisms of PS emerged since then. Beale et al.12 proposed that the material in the PS is depleted of carriers and the presence of a depletion layer is responsible for current localization at pore tips where the field is intensified. Smith et al.13-15 described the morphology of PS based on the hypothesis that the rate of pore growth is limited by diffusion of holes to the growing pore tip. Unagami16 postulated that the formation of PS is promoted by the deposition of a passive silicic acid on the pore walls resulting in the preferential dissolution at the pore tips. Alternatively, Parkhutik et al.17 suggested that a passive film composed of silicon fluoride and silicon oxide is between PS and silicon substrate and that the formation of PS is similar to that of porous alumina. [Pg.148]

Etching of the substrate occurs when y-APS films are deposited onto aluminum (Horner and Boerio, unpublished results) and aluminum may substitute for silicon during polymerization of the silane on the surface. The resulting alumino-silicate structure would have an overall negative charge which would be balanced by protonated amino groups. [Pg.260]

Risen and Wang developed a method and compositions for producing microlenses and optical filters. According to their method, carboxylated silicone or polysilicone precursor composition is applied to the surface of a substrate to form a precursor droplet, which is thermally oxidized to form a microlens. The substrates utilized were silica, silicates, borosilicate glasses, and silicones. The precursors, which are present in concentrated solutions, are viscous fluids which are used to form microdroplet precursors. A solvent such as ethanol or acetone is added to the precursors to modify and control their flow and surface tension properties, to facihtate the formation of spherical shape of the precursor on substrates. The precursor droplet volume is 4-600 picoliters and forms a droplet of 20 to 1000 micrometers in diameter. [Pg.218]

Rare earth silicates exhibit potential applications as stable luminescent materials for phosphors, scintillators, and detectors. Silica and silicon substrates are frequently used for thin films fabrication, and their nanostructures including monodisperse sphere, NWs are also reliable templates and substrates. However, the composition, structure, and phase of rare earth silicates are rather complex, for example, there are many phases like silicate R2SiOs, disilicate R2Si207 (A-type, tetragonal), hexagonal Rx(Si04)602 oxyapatite, etc. The controlled synthesis of single-phase rare earth silicate nanomateriais can only be reached with precisely controlled experimental conditions. A number of heat treatment based routes, such as solid state reaction of rare earth oxides with silica/silicon substrate, sol-gel methods, and combustion method, as well as physical routes like pulsed laser ablation, have been applied to prepare various rare earth silicate powders and films. The optical properties of rare earth silicate nanocrystalline films and powders have been studied. [Pg.385]

The modem silicon-based microelectronics led to the miniaturization of electronic devices. However, delays caused by metallic intercoimec-tions became a bottleneck for the improvement of their performances. One possible solution of this problem is to use optical intercoimections for the transfer of information, and, therefore, silicon compatible materials and devices that are able to generate, guide, amplify, switch, modulate, and detect light are needed. Rare earth silicates with luminescent rare earths and compatibility with silicon may be a good choice for these applications (Miritello et al., 2007). Miritello et al. presented the study on nanocrystalline erbium silicate thin films fabricated on silicon/silica substrates. The obtained films exhibit strong photoluminescence emission around 1540 nm with room temperature excitation by 488 ran Ar laser. [Pg.386]

Kang and Rhee grew bismuth oxide films at 225-425 °C by direct liquid injection MOCVD, using Bi(thd)3 dissolved in n-BuOAc. Temperatures above 325 °C tend to decrease the growth rate due to gas-phase dissociation processes. Annealing at temperatures up to 650 °C is necessary to obtain monoclinic o -Bi203. Temperatures above 750 °C convert a-Bi203 into cubic bismuth silicate due to the reaction with the silicon substrate. [Pg.974]

Yttria thin films can also be deposited on Si substrates from Y(hfac)3 and Y(thd)3 by oxygen plasma-assisted CVD. It is found that with Y(hfac)3 the appropriate thin films were contaminated with fluorine, leading to unexceptional electrical properties. As discussed in Section V.A.4, next to yttrium oxide, SiOi and yttrium silicate are formed on the substrate surface. Pre-nitridation of the silicon surface impedes the reaction with the substrate. [Pg.975]

It is well known that organosilicon compounds do not become equally well attached to all mineral substrates. While silicates always readily lend themselves to coating with silane and polysiloxane [19-21], the same cannot always be said of calcium carbonate [19, 20]. Calcium carbonate (calcite), a widely used filler, is generally considered difficult to cover with silanes. Given the proven, good attachment of silicone resin to calcium carbonate fillers in silicone resin emulsion paints [2, 22], the question arises as to whether only higher polymeric siloxanes are able to form hydrophobic protective coatings on calcium carbonate. [Pg.827]

Fig. 11. SE micrographs of nanoscale, silicate networks, which faithfully reproduce the original structure of their organic substrates following immersion in 7— 1S% silicone resin solution, a Cellulose from fiber-fill after calcination at 450 °C. b, c Cotton nafddn after ashing, b by calcination at 450 °C, and c after cold ashing. Fig. 11. SE micrographs of nanoscale, silicate networks, which faithfully reproduce the original structure of their organic substrates following immersion in 7— 1S% silicone resin solution, a Cellulose from fiber-fill after calcination at 450 °C. b, c Cotton nafddn after ashing, b by calcination at 450 °C, and c after cold ashing.

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See also in sourсe #XX -- [ Pg.157 , Pg.160 ]




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