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Si-PIN-diodes

Adjustable Workbench (PAW) instrument assembly. The SH shown in Figs. 3.15 and 3.16 contains the electromechanical transducer (mounted in the center), the main and reference Co/Rh sources, multilayered radiation shields, detectors and their preamplifiers and main (linear) amplifiers, and a contact plate and sensor. The contact plate and contact sensor are used in conjunction with the IDD to apply a small preload when it places the SH holding it firmly against the target. The electronics board contains power supplies/conditioners, the dedicated CPU, different kinds of memory, firmware, and associated circuitry for instrument control and data processing. The SH of the miniaturized Mossbauer spectrometer MIMOS II has the dimensions (5 x 5.5 x 9.5) cm and weighs only ca. 400 g. Both 14.4 keV y-rays and 6.4 keV Fe X-rays are detected simultaneously by four Si-PIN diodes. The mass of the electronics board is about 90 g [36],... [Pg.55]

Fig. 3.18 Pulse-height analysis (PHA) spectrum (or energy spectrum) for Co/Rh Mossbauer source radiation backscattered nonresonantly and/or resonantly from aluminum and stainless steel plates. Data were obtained with Si-PIN diodes with sensitive area of 1 cm per diode and a thickness of 400 pm (from [36, 46])... Fig. 3.18 Pulse-height analysis (PHA) spectrum (or energy spectrum) for Co/Rh Mossbauer source radiation backscattered nonresonantly and/or resonantly from aluminum and stainless steel plates. Data were obtained with Si-PIN diodes with sensitive area of 1 cm per diode and a thickness of 400 pm (from [36, 46])...
The light-weight Elva-X energy dispersive XRF spectrometer employed for this study has an air-cooled rhodium target anode X-ray tube with 140 micron Be window and a thermoelectrically cooled Si-PIN diode detector. The detector... [Pg.531]

Solid-state detectors based on silicon- or germanium-diodes possess better resolution than gas counters, particularly when cooled with liquid nitrogen, but they allow only very low count rates. PIN diodes have also recently become available and have been developed for the instruments used in the examination of Martian soils (Sects. 3.3 and 8.3). A very recent development is the so-called silicon-drift detector (SDD), which has very high energy resolution (up to ca. 130 eV) and large sensitive detection area (up to ca. 1 cm ). The SNR is improved by an order of magnitude compared to Si-PIN detectors. Silicon drift detectors may also be used in X-ray florescence spectroscopy, even in direct combination with Mossbauer spectroscopy (see Sects. 3.3 and 8.3). [Pg.39]

Fig. 8.41 Left. Comparison of SNR of 14.4 keV Mossbauer spectra, taken with a Si-PIN detector system (MER instrument four diodes) and with a SDD detector system (advanced MIMOS instrument only one diode chip) Right. X-ray spectrum of a basalt (Ortenberg basalt see [366, 371], taken with a high resolution Si-drift detector system at ambient pressure (1 atm), demon-... Fig. 8.41 Left. Comparison of SNR of 14.4 keV Mossbauer spectra, taken with a Si-PIN detector system (MER instrument four diodes) and with a SDD detector system (advanced MIMOS instrument only one diode chip) Right. X-ray spectrum of a basalt (Ortenberg basalt see [366, 371], taken with a high resolution Si-drift detector system at ambient pressure (1 atm), demon-...
The silicon-based solid-state detectors fall into three general categories surface barrier devices, PIN diodes, and Si(Li) (pronounced silly ) devices. These detectors are used to measure short-ranged radiation charged particles in the first two cases and low-energy 7 rays and X-rays in the third case. The detector... [Pg.553]

Various eomplete photodiode modules are commereially available. They use Si PIN photodiodes at an internally generated reverse voltage in the range of 30 V, Si avalanche photodiodes at a voltage of 50 to 150 V, or fast InGaAs diodes. [Pg.306]

D. Li (Canada) Biosens Bioelectron 2006 21 2006 multimode fiber core 200 pun, clad 350 pun material silica red laser diode X=640nm none fluorescence Si PIN photodiode... [Pg.1520]

Si PIN photodiodes feature low capacitance, which enables them to deliver a wide bandwidth with only a low bias voltage, making them ideal for high-speed photometry as well as optical communications. Some PIN diodes have a mini-lens, which increases fiber coupling efficiency and enhanced sensitivity for violet laser detection. [Pg.1527]

The double threshold addressed matrix liquid crystal display panel uses a two-terminal device that accomplished both set and reset functions for each pixel with appropriate signal pulses from the gate electrode drivers. To realize this panel, an amorphous silicon (a-Si) PIN thin film diode (TFD) matrix construction is used. The circuit diagram of a matrix panel addressed by these diodes is shown in Fig. 1 [4], Each pixel is composed of a pair of diodes and one liquid crystal cell connected in series between a gate electrode bus and a data electrode bus. The diode pair is referred to as a diode ring, because the connection is a ring. [Pg.1211]

In energy dispersive analysis, semiconductor crystals such as the PIN-diode, Si(Li), Ge(Li), and silicon drift detector (SDD) are generally used as X-ray detectors. They allow the count of an amount of photons and determination of the energy of the photon. An introduction of recent progress in X-ray detection... [Pg.68]


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See also in sourсe #XX -- [ Pg.58 ]




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