Semiconductors crosslinkable

Positive-Tone Photoresists based on Dissolution Inhibition by Diazonaphthoquinones. The intrinsic limitations of bis-azide—cycHzed mbber resist systems led the semiconductor industry to shift to a class of imaging materials based on diazonaphthoquinone (DNQ) photosensitizers. Both the chemistry and the imaging mechanism of these resists (Fig. 10) differ in fundamental ways from those described thus far (23). The DNQ acts as a dissolution inhibitor for the matrix resin, a low molecular weight condensation product of formaldehyde and cresol isomers known as novolac (24). The phenoHc stmcture renders the novolac polymer weakly acidic, and readily soluble in aqueous alkaline solutions. In admixture with an appropriate DNQ the polymer s dissolution rate is sharply decreased. Photolysis causes the DNQ to undergo a multistep reaction sequence, ultimately forming a base-soluble carboxyHc acid which does not inhibit film dissolution. Immersion of a pattemwise-exposed film of the resist in an aqueous solution of hydroxide ion leads to rapid dissolution of the exposed areas and only very slow dissolution of unexposed regions. In contrast with crosslinking resists, the film solubiHty is controUed by chemical and polarity differences rather than molecular size. 

Morita [3] prepared silsesquioxane resins using crosslinkable vinyl monomers, (III), for use in semiconductor devices. 

Crosslinkable mesogenic azulenes, (III) and (IV), prepared by Farrand [4], and anthracenyl, (V), and tetracenyl, (VI), thiophenes, prepared by Gerlach [5], were used as semiconductors and charge transport agents in electronic devices. 

The efficient light-initiated decomposition of azides has been the basis for commercially important photoresist formulations for the semiconductor industry. A common approach is to mix a diazide, such as diazadibenzylidenecyclohexanone (I), with an unsaturated hydrocarbon polymer. Excitation of the difunction-al sensitizer produces highly reactive nitrenes which crosslink the polymer by a variety of paths including insertion into both carbon-carbon double bonds and carbon-hydrogen bonds, and by generation of radicals. The polymer component in the most widely used resists is polyisoprene which has been partially eye Iized by reaction with p-toluenesulfonic acid G). Other polymers used include polycyclopentadiene and the copolymer of cyclopentadiene and a-methyI styrene ( ). 

Silicone Polymers - Laser flash photolysis studies on poly(silylenes) generates radical cations along with silyl radicals and polysiloxane composities for the space shuttle have been found to be stable to far UV light exposure. Linear polysiloxanes have been found to be more unstable than branched or crosslinked polymers while the transparency of poly(methylphenylsilane) increases with light exposure. Photooxidised polysiloxanes doped with iodine are converted into semiconductors. ... 

Abstract. The design and synthesis of new molecular synthons for vapor-phase self-assembled nanodieletrics and silane crosslinkers for crosslinked polymer blend dielectrics is described. These dielectric films exhibit excellent dielectric properties with tunable thicknesses and capacitance values. These new gate dielectric materials are integrated into thin-film transistors based both p- and n-type organic semiconductors. 

CPB Materials. Various types of silane crosslinkers were employed to fabricate crosslinked polymer blend (CPB) dielectrics in this study (Fig. 4). The reactivity of each crosslinker was tested via in situ NMR kinetic studies. The CPB dielectrics were fabricated on various substrates using mixture of polymer and crosslinker solution via spin-coating and gravure-printing. Organic semiconductors and source/ drain electrodes were vacuum-deposited to complete the OFET device. Dielectric and OFET properties were measured under vacuum and ambient as described previously. 

Crosslinkable Organic Semiconductors for Use in Organic Light-Emitting Diodes (OLEDs)... 

The first example of using the [2+2] cycloaddition for crosslinking of organic semiconductor layers was reported in 1997 by Remmers et al. [10]. It was a derivative of poly-p-phenylene (PP) deposited by the Langmiur-Blodgett (LB) technique (Fig. 9.5(a)). Polarized absorption and fluorescence of the films was reported, but no OLED devices were fabricated. 

Most papers on crosslinkable organic semiconductors focus on the insolubility and multilayer capability. There are only few instances where the lithographic re-... 

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