Semiconductors reduction

To have passage of current it is necessary that EF is within the conduction or within the valence band in the space-charge region, i.e. accumulation layer in an n-type semiconductor (reduction) or hole accumulation layer in a p-type semiconductor (oxidation). 

A large variety of organic oxidations, reductions, and rearrangements show photocatalysis at interfaces, usually of a semiconductor. The subject has been reviewed [326,327] some specific examples are the photo-Kolbe reaction (decarboxylation of acetic acid) using Pt supported on anatase [328], the pho-... 

A logical consequence of this trend is a quantum w ell laser in which tire active region is reduced furtlier, to less tlian 10 nm. The 2D carrier confinement in tire wells (fonned by tire CB and VB discontinuities) changes many basic semiconductor parameters, in particular tire density of states in tire CB and VB, which is greatly reduced in quantum well lasers. This makes it easier to achieve population inversion and results in a significant reduction in tire tlireshold carrier density. Indeed, quantum well lasers are characterized by tlireshold current densities lower tlian 100 A cm . ... 

Rhenium hexafluoride is used for the deposition of rhenium metal films for electronic, semiconductor, laser parts (6—8), and in chemical vapor deposition (CVD) processes which involve the reduction of ReF by hydrogen at elevated (550—750°C) temperatures and reduced (<101.3 kPa (1 atm)) pressures (9,10). 

Naphthaleneamine. 1-Naphthylamine or a-naphth5iamine/7i5 -i2- can be made from 1-nitronaphthalene by reduction with iron—dilute HCl, or by catalytic hydrogenation it is purified by distillation and the content of 2-naphthylamine can be reduced as low as 8—10 ppm. Electroreduction of 1-nitronaphthalene to 1-naphthylamine using titania—titanium composite electrode has been described (43). Photoinduced reduction of 1-nitronaphthalene on semiconductor (eg, anatase) particles produces 1-naphthylamine in 77% yield (44). 1-Naphthylamine/7J4-J2-. can also be prepared by treating 1-naphthol with NH in the presence of a catalyst at elevated temperature. The sanitary working conditions are improved by gas-phase reaction at... 

Fig. 5. Photophysical and photochemical processes in a semiconductor cluster whereand represent chemical species, adsorbed on the surface of the semiconductor particle, which are capable of undergoing reduction and oxidation at rates and respectively. The subscript...

Bina Selenides. Most biaary selenides are formed by beating selenium ia the presence of the element, reduction of selenites or selenates with carbon or hydrogen, and double decomposition of heavy-metal salts ia aqueous solution or suspension with a soluble selenide salt, eg, Na2Se or (NH 2S [66455-76-3]. Atmospheric oxygen oxidizes the selenides more rapidly than the corresponding sulfides and more slowly than the teUurides. Selenides of the alkah, alkaline-earth metals, and lanthanum elements are water soluble and readily hydrolyzed. Heavy-metal selenides are iasoluble ia water. Polyselenides form when selenium reacts with alkah metals dissolved ia hquid ammonia. Metal (M) hydrogen selenides of the M HSe type are known. Some heavy-metal selenides show important and useful electric, photoelectric, photo-optical, and semiconductor properties. Ferroselenium and nickel selenide are made by sintering a mixture of selenium and metal powder. 

Silicon Tetrachloride. Most commercially available sihcon tetrachloride is made as a by-product of the production of alkylchlorosilanes and trichlorosilane and from the production of semiconductor-grade sihcon by thermal reduction of trichlorosilane. 

Reduction/Reaction with Hydrogen. Tetraduorosilane reacts with hydrogen only above 2000°C. Tetrachlorosilane can be reduced by hydrogen at 1200°C. Tetraio do silane can be reduced to sihcon at 1000°C (165). Reduction of tetraduorosilane with potassium metal to sihcon was the first method used to prepare sihcon (see Silicon and silicon alloys). The reduction of sihcon tetrachloride by ziac metal led to the first semiconductor-grade sihcon (166,167). 

Metal teUurides for semiconductors are made by direct melting, melting with excess teUurium and volatilizing the excess under reduced pressure, passing teUurium vapor in an inert gas carrier over a heated metal, and high temperature reduction of oxy compounds with hydrogen or ammonia. 

Both anatase and mtile are broad band gap semiconductors iu which a fiUed valence band, derived from the O 2p orbitals, is separated from an empty conduction band, derived from the Ti >d orbitals, by a band gap of ca 3 eV. Consequendy the electrical conductivity depends critically on the presence of impurities and defects such as oxygen vacancies (7). For very pure thin films, prepared by vacuum evaporation of titanium metal and then oxidation, conductivities of 10 S/cm have been reported. For both siugle-crystal and ceramic samples, the electrical conductivity depends on both the state of reduction of the and on dopant levels. At 300 K, a maximum conductivity of 1 S/cm has been reported at an oxygen deficiency of... 

Semiconductor and Solar Cells. High purity (up to 99.9%) antimony has a limited but important appHcation in the manufacture of semiconductor devices (see Semiconductors). It may be obtained by reduction of a chemically purified antimony compound with a high purity gaseous or soHd reductant, or by thermal decomposition of stibine. The reduced metal may be further purified by pyrometaHurgical and zone melting techniques. 

Semiconductor Applications. A limited but important demand for metaUic arsenic of 99.99% and greater (exceeding 99.999 + %) purities exists in semiconductor appHcations (see Semiconductors). This high purity arsenic may be prepared by the reduction of a highly purified arsenic compound using a high purity gaseous or soHd reductant. 

Materials made of siHcon nitride, siHcon oxynitride, or sialon-bonded siHcon carbide have high thermal shock and corrosion resistance and may be used for pump parts, acid spray nozzles, and in aluminum reduction ceUs (156—159). A very porous siHcon carbide foam has been considered for surface combustion burner plates and filter media. It can also be used as a substrate carrying materials such as boron nitride as planar diffusion source for semiconductor doping appHcations. 

Another source of departure from stoichiometry occurs when cations are reduced, as for example in tire reduction of zinc oxide to yield an oxygen-defective oxide. The zinc atoms which are formed in tlris process dissolve in the lattice, Zn+ ions entering interstitial sites and the coiTesponding number of electrons being released from these dissolved atoms in much the same manner as was found when phosphorus was dissolved in the Group IV semiconductors. The Kroger-Viirk representation of dris reduction is... 

Sputter-induced Roughness. Sputtering single crystal semiconductors, in particular II-VI semiconductors, with Cs" ions results in surface roughening. There is currently no satisfactory explanation of this effect. This effect, and the corresponding reduction of the depth resolution, can be avoided by rotating the sample during the measurement. 

Today, dynamic random-access memories (DRAMs) are transistor/capacitor-based semiconductor devices, with access times measured in nanoseconds and very low costs. Core memories were made of magnetic rings not less than a millimetre in diameter, so that a megabyte of memory would have occupied square metres, while a corresponding DRAM would occupy a few square millimetres. Another version of a DRAM is the read-only memory (ROM), essential for the operation of any computer, and unalterable from the day it is manufactured. We see that developments in magnetic memories involved dramatic reductions in cost and... 

As widi arsenic, semiconductor grade Sb is prepared by chemical reduction of highly purified compounds AlSb, GaSb and InSb have applications in infrared devices, diodes and Hall-effect devices. ZnSb has gootl themioelectric properties. Applications of various conipounjs of Sb will be mentioned when die compounds tbemselves are discussed. 

Tellurium and cadmium Electrodeposition of Te has been reported [33] in basic chloroaluminates the element is formed from the [TeCl ] complex in one four-electron reduction step, furthermore, metallic Te can be reduced to Te species. Electrodeposition of the element on glassy carbon involves three-dimensional nucleation. A systematic study of the electrodeposition in different ionic liquids would be of interest because - as with InSb - a defined codeposition with cadmium could produce the direct semiconductor CdTe. Although this semiconductor can be deposited from aqueous solutions in a layer-by-layer process [34], variation of the temperature over a wide range would be interesting since the grain sizes and the kinetics of the reaction would be influenced. 

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