Nanowire arrays

Non-aqueous electrolytes have been used for the preparation of CdS, CdSe, and CdTe nanowire arrays by dc electrodeposition in porous AAO templates of various pore diameters [155, 156]. For instance, CdSe NW arrays with uniform wurtzite crystal structure were fabricated from a non-aqueous DMSO solution containing CdCl2 and elemental Se. The NWs were shown to be of uniform length (2-15 p.m) and diameter (about 20 nm). The c-axis, [00.2], of the grown... 

Fig. 4.17 SEM image of HT (high-temperature) M0S2 nanowire arrays on the adhesive surface at two magnifications. The surface was coated with 10 nm of gold for SEM imaging. (Reprinted with permission from [171], Copyright 2009, American Chemical Society)...

Routkevitch D, Bigioni T, Moskovits M, Xu JM (1996) Electrochemical fabrication of CdS nanowire arrays in porous anodic aluminum oxide templates. J Phys Chem 100 14037-14047... 

Xu D, Chen D, Xu Y, Shi X, Guo G, Gui L, Tang Y (2000) Preparation of II-VI group semiconductor nanowire arrays by dc electrochemical deposition in porous aluminum oxide templates. Pure Appl Chem 72 127-135... 

Martin-Gonzalez M, Prieto AL, Gronsky R, Sands T, Stacy AM (2003) High density 40 nm diameter Sb-rich, Bi2-xSbj Te3 nanowire arrays. Adv Mater 15 1003-1006... 

Jin C, Zhang G, Qian T, Li X, Yao Z (2005) Large-area SbaTes nanowire arrays. J Phys Chem B 109 1430-1432... 

Zhang, L., Fang, Y. and Zhang, P. (2008) Experimental and DFT theorehcal studies of SERS effect on gold nanowires array. Chemical Physics Letters, 451, 102-105. 

K. Ramanathan, M.A. Bangar, M. Yun, W. Chen, A. Mulchandani, and N.V. Myung, Individually addressable conducting polymer nanowires array. Nano Lett. 4, 1237-1239 (2004). 

Figure 10.17. (a) Schematic diagram of the nanowire dye-sensitized solar cell. Light is incident through the bottom electrode, (b) SEM cross section of a solution-fabricated ZnO nanowire array on fluorine-doped tin oxide. The wires are in direct contact with the substrate. Scale bar, 5 pm. Reproduced from Ref. 41, Copyright 2005, with permission from the Nature Publishing Group. 

McAlpine, M. C. Ahmad, H. Wang, D. Heath, J. R. 2007. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors. Nature Mater. 5 379-384. 

Whang, D. Jin, S. Wu, Y. Lieber, C. M. 2003. Large-scale hierarchical organization of nanowire arrays for integrated nanosystems. Nano Lett. 3 1255-1259. 

Fig. 8 Schematic of nanofabrication methodology (left) and SEM image of Co nanowire array (right). Reproduced from [29]... 

Cheng, C. Sun, Y., Carbon doped Ti02 nanowire arrays with improved photoelectrochemical water splitting performance. Appl. Surface Science 2012,263 273-276. 

Haider A, Ravishankar N (2007) Ultrafine single-crystalline gold nanowire arrays by oriented attachment. Adv Mater 19(14) 1854-1858... 

Li et al. [61] reported a novel method using a sequence-specific label-free DNA sensors based on silicon nanowires (Si-NWs) by measuring the change in the conductance. Kelley s group [62] developed a gold nanowire array (Au-NW) in 15-20 nm diameter range and this array was used for electrochemical DNA detection with the help of the elect-rocatalytic reporter systems, Ru(NH3)6+ and Fe(CN). ... 

Thurn-Albrecht T et al (2000) Ultrahigh-density nanowire arrays grown in self-assembled diblock copolymer templates. Science 290(5499) 2126-2129... 

Fig. 6. (a) SEM image of the bottom surface of an anodic alumina template filled with bismuth. The pore diameter is 42 nm. (b) TEM micrograph of the cross section of a 65-nm bismuth nanowire array (Zhang et al., 1999). 

Figure 8 shows X-ray diffraction (XRD) patterns of bismuth nanowire arrays (Lin et al., 2000b). It illustrates that the crystal structure of bismuth nanowires is the same as that of bulk bismuth and that no copper phases were present. The nanowires have a preferred wire orientation dependent on their diameters. The major orientations of the 95-nm and 40-nm bismuth nanowire arrays were normal to the (202) and (012) lattice planes, respectively, indicating that most (> 80%) of the nanowires were oriented along the [1011] and [0112] directions for <7W > 60 nm and <7W < 50 nm, respectively (Zhang et al., 1999 Lin et al., 2000b). The existence of more than one dominant orientation in the 52-nm Bi nanowires (Fig. 8(b)) was... 

Figure 19(a) shows the temperature dependence of resistance R(T) for bismuth nanowire arrays (dw = 7 - 200 nm) synthesized by vapor deposition and measured by Heremans et al. (2000). Hong et al. (1999) reported similar resistance measurements on bismuth wires of larger diameters (200 nm to 2, uni) prepared by electrochemical deposition (Fig. 19(b)). These two studies... 

Fig. 19. (a) Measured temperature dependence of resistance for bismuth nanowire arrays of various wire diameters dw (Heremans et al, 2000). (b) R(T)/R(290 K) for bismuth wires of larger dw measured by Hong et al. (1999). (c) Calculated R(T)/R(300 K) of 36-nm and 70-nm bismuth nanowires (Lin et al, 2000b). The dashed curve refers to a 70-nm poly crystalline wire with increased boundary scattering. 

Routkevitch, D., Tager, A. A., Haruyama, X, AlMawlawi, D., Moskovits, M., and Xu, J. M., Nonlithographic nanowire arrays Fabrication, physics, and device applications. IEEE Trans. Electron. Dev. 43,1646 (1996b). 

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