Modified semiconductors

Electrocatalytic, photocatalytic, and photoelectrochemical behavior of a semiconductor modified by the deposition of metal nanoparticles depends strongly on the... 

M. Lackhoff, X. Prieto, N. Nestle, F. Dehn, R. Niessner, Photocatal3dic activity of semiconductor-modified cement-influence of semiconductor type and cement ageing . Applied Catalysis B Environmental, 43, 205-216, (2003). 

In 1967 both Shaver [24] and Loh [25] described effects achievable with oxide semiconductors modified by the addition of noble metals (e.g.. Pt, Pd, Ir, Rh), and since that time the sensitivity and selectivity of semiconductor sensing devices has been significantly enhanced. Intense efforts in this direction, coupled with the further addition of metal oxides [26]-[28], resulted in widespread application of semiconductor gas sensors beginning in the 1970s. 

The ISFET, developed from the fabrication techniques of semiconductor devices, is an important sensor device used in potentiometry. The main advantages are the extremely small size, solid-state structure and the ability to fabricate multi-ion sensors. More than 30 years ago, methods have been proposed to work with a differential arrangement, i.e. the integration of an ion-sensitive and an ion-insensitive structure, the later one working as the reference element (R(E)FET). The main problem is that semiconductor-modified surfaces required for R(E)FET are also not always in thermodynamical equilibrium with the test solution and can be sensitive to aggressive or interfering dissolved species or not well characterised aging phenomena. 

There are many other experiments in which surface atoms have been purposely moved, removed or chemically modified with a scanning probe tip. For example, atoms on a surface have been induced to move via interaction with the large electric field associated with an STM tip [78]. A scaiming force microscope has been used to create three-dimensional nanostructures by pushing adsorbed particles with the tip [79]. In addition, the electrons that are tunnelling from an STM tip to the sample can be used as sources of electrons for stimulated desorption [80]. The tuimelling electrons have also been used to promote dissociation of adsorbed O2 molecules on metal or semiconductor surfaces [81, 82]. 

Gases used in the manufacture of semiconductor materials fall into three principal areas the inert gases, used to shield the manufacturing processes and prevent impurities from entering the source gases, used to supply the molecules and atoms that stay behind and contribute to the final product, and the reactive gases, used to modify the electronic materials without actually contributing atoms or molecules. 

Teflon PEA 440 HP is a chemically modified form of PEA 340 that provides additional benefits such as enhanced purity and improved thermal stability. This product is suitable for producing tubing, pipe linings for production of ultrapure chemicals, semiconductor components, and fluid handling systems for high performance filters (31). 

Mercury Telluride. Compounds of mercury with tellurium have gained importance as semiconductors with appHcations in infrared detection (9) and solar cells (10). The ratio of the components is varied, and other elements such as cadmium, zinc, and indium are added to modify the electronic characteristics. 

The effective masses of holes and electrons in semiconductors are considerably less than that of the free electron, and die conduction equation must be modified accordingly using the effective masses to replace tire free electron mass. The conductivity of an intrinsic semiconductor is then given by... 

Like XPS, the application of AES has been very widespread, particularly in the earlier years of its existence more recently, the technique has been applied increasingly to those problem areas that need the high spatial resolution that AES can provide and XPS, currently, cannot. Because data acquisition in AES is faster than in XPS, it is also employed widely in routine quality control by surface analysis of random samples from production lines of for example, integrated circuits. In the semiconductor industry, in particular, SIMS is a competing method. Note that AES and XPS on the one hand and SIMS/SNMS on the other, both in depth-profiling mode, are complementary, the former gaining signal from the sputter-modified surface and the latter from the flux of sputtered particles. 

A novel development of the use of ion-selective electrodes is the incorporation of a very thin ion-selective membrane (C) into a modified metal oxide semiconductor field effect transistor (A) which is encased in a non-conducting shield (B) (Fig. 15.4). When the membrane is placed in contact with a test solution containing an appropriate ion, a potential is developed, and this potential affects the current flowing through the transistor between terminals Tt and T2. 

Gallium arsenide is a semiconducting material. If we wish to modify the sample by replacing a small amount of the arsenic with an element to produce an n-type semiconductor, which element would we choose selenium, phosphorus, or silicon Why ... 

The two extremes of ordering in solids are perfect crystals with complete regularity and amorphous solids that have little symmetry. Most solid materials are crystalline but contain defects. Crystalline defects can profoundly alter the properties of a solid material, often in ways that have usefial applications. Doped semiconductors, described in Section 10-, are solids into which impurity defects are introduced deliberately in order to modify electrical conductivity. Gemstones are crystals containing impurities that give them their color. Sapphires and rubies are imperfect crystals of colorless AI2 O3, red. 

Chemical and electrochemical techniques have been applied for the dimensionally controlled fabrication of a wide variety of materials, such as metals, semiconductors, and conductive polymers, within glass, oxide, and polymer matrices (e.g., [135-137]). Topologically complex structures like zeolites have been used also as 3D matrices [138, 139]. Quantum dots/wires of metals and semiconductors can be grown electrochemically in matrices bound on an electrode surface or being modified electrodes themselves. In these processes, the chemical stability of the template in the working environment, its electronic properties, the uniformity and minimal diameter of the pores, and the pore density are critical factors. Typical templates used in electrochemical synthesis are as follows ... 

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