Semiconductor compensated

The presence of the region of weak dependence of the conductivity of alloyed semiconductors on temperature can be explained by tunneling of electrons from one impurity centre to another, unoccupied centre. The necessary condition of the impurity conductivity is the partial filling of the impurity levels. At low temperatures this conduction can be maintained only by semiconductor compensation, i.e. by the simultaneous presence of donor and acceptor impurities. In the case, for instance, of the n-type semiconduc-... 

If was nof until fhe developmenf of Fourier fransform infrared (FTIR) specfromefers (see Section 3.3.3.2) fhaf fhe possibilify of using an infrared laser routinely was opened up. The intensify advanfage of an infrared interferometer, wifh which a single specfrum can be obfained very rapidly and fhen many specfra co-added, coupled wifh fhe developmenf of more sensitive Ge and InGaAs semiconductor infrared defectors, more fhan compensate for fhe loss of scatfering intensify in fhe infrared region. 

Impurity-produced plasmas in semiconductors do not have to be compensated by charges of the opposite sign. These plasmas can be produced by introduction of either electron donors or electron scavengers, ie, hole producers, into semiconductor lattices. Thek densities range from a lower limit set by the abihty to produce pure crystals particles/cm ) to values in excess of 10 particles/cm. Plasmas in semiconductors generally are dilute, so that... 

Another class of devices used to control the voltage is operated using powered electronic switches to continuously adjust the capacitance and/or inductance in a substation to keep the voltage at precisely the voltage desired. These devices are relatively new in deployment, having been developed with the advent of inexpensive and robust power semiconductor components. These devices are part of a group broadly known as FACTS (Flexible AC Transmission System) devices and include static var compensators, static synchronous compensators, and dynamic voltage restorers. 

Figure 13-4. Encigy level diagnim of a single-layer OLED, where the organic malerial is depicted as a fully depleted semiconductor. The valence band Ey corresponds to the HOMO and the conduction band Ec corresponds to the LUMO. Tile Fermi levels of the two metal electrodes are marked as Et-. Upon contact a built-in potential is established and needs to be compensated for, before the device will begin to operating.

The availability of the surface charge results in redistribution of free charge carriers in semiconductor which leads to formation of a compensating space charge and electric field E related to the value of the volume charge through the Poisson equation ... 

Therefore, we see that the development of EEP semiconductor detectors is a challenge that expects knowing of diverse experimental equipment, and, what is more, carrying out some particular investigations. The experimental difficulties, however, are compensated for by the ad-... 

Two types of radiation sources are used in IR sensing. Common sources are thermal broadband emitters. The second type are laser sources, mostly semiconductor lasers. The application of (monochromatic) laser sources trades the ability of multi-component detection against higher sensitivity for pre-defined target analytes. Hence, laser sources are primarily suitable for sensitive sensing in well-defined, stable systems, also because spectrally interfering substances can neither be detected as such nor compensated. 

Dependent on the type of doped semiconductor substrate as well as on the sign of the molecular charge, these two effects can affect the sensor signal in the same direction, or in the opposite direction and thus, to some extent, they might even compensate each other. 

Some of the major questions that semiconductor characterization techniques aim to address are the concentration and mobility of carriers and their level of compensation, the chemical nature and local structure of electrically-active dopants and their energy separations from the VB or CB, the existence of polytypes, the overall crystalline quality or perfection, the existence of stacking faults or dislocations, and the effects of annealing upon activation of electrically-active dopants. For semiconductor alloys, that are extensively used to tailor optoelectronic properties such as the wavelength of light emission, the question of whether the solid-solutions are ideal or exhibit preferential clustering of component atoms is important. The next... 

Spreading resistance—the resistance between the deep interior of a semiconductor and a very sharp metal point pressed on the surface— measures the local resistivity on a scale of the order of the contact radius (Ehrstein, 1974). It thus measures the amount of hydrogen taking part in donor or acceptor passivation, whether this occurs by complex formation or by compensation. However, some methods of preparing samples for a spreading resistance measurement may involve heating above room temperature, and this may cause redistribution even of hydrogen bound in some types of complexes (Mu et al., 1986). 

Polycrystalline GaN UV detectors have been realized with 15% quantum efficiency [4], This is about 1 /4 of the quantum efficiency obtained by crystalline devices. Available at a fixed price, however, their increased detection range may well compensate their lack in sensitivity. Furthermore, new semiconductor materials with a matching band gap appear as promising candidates for UV detection if the presumption of the crystallinity is given up. Titanium dioxide, zinc sulfide and zinc oxide have to be mentioned. The opto-electronic properties and also low-cost production processes for these compound semiconductors have already been investigated to some extent for solar cell applications [5]. 

If the donors and acceptors are present in equal numbers, the material is said to be a compensated semiconductor. At 0 K these materials are insulators, and it is difficult in practice to distinguish between compensated and intrinsic semiconductors. When all of the impurities are fully ionized so that either all the donor levels have lost an electron or all the acceptor levels have gained an electron, the exhaustion range has been reached. 

In comparison to the research in n-type oxide semiconductors, little work has been done on the development of p-type TCOs. The effective p-type doping in TCOs is often compensated due to their intrinsic oxide structural tolerance to oxygen vacancies and metal interstitials. Recently, significant developments have been reported about ZnO, CuA102, and Cu2Sr02 as true p-type oxide semiconductors. The ZnO exhibits unipolarity or asymmetry in its ability to be doped n-type or p-type. ZnO is naturally an n-type oxide semiconductor because of a deviation from stoichiometry due to the presence of intrinsic defects such as Zn interstitials and oxygen vacancies. A p-type ZnO, doped with As or N as a shallow acceptor and codoped with Ga or Zn as a donor, has been recently reported. However, the origin of the p-type conductivity and the effect of structural defects on n-type to p-type conversion in ZnO films are not completely understood. 

Semiconductor based devices are the integrated circuit temperature transducers which, in a limited temperature range, may produce an easy-to-read output proportional to temperature and may also be used for thermocouple compensation. 

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