Acceptor passivation

Note that for this model situation, it is by no means correct to estimate D as approximately L2/2t, as has often been assumed in the literature for the (admittedly slightly different) case of acceptor passivation. The correct D, equal to L2/2a2t, can even be orders of magnitude larger, if n(0)/nl is small (see Section 3 in III), since a— [n(0)/ i]1/2 in this limit. 

Spreading resistance—the resistance between the deep interior of a semiconductor and a very sharp metal point pressed on the surface— measures the local resistivity on a scale of the order of the contact radius (Ehrstein, 1974). It thus measures the amount of hydrogen taking part in donor or acceptor passivation, whether this occurs by complex formation or by compensation. However, some methods of preparing samples for a spreading resistance measurement may involve heating above room temperature, and this may cause redistribution even of hydrogen bound in some types of complexes (Mu et al., 1986). 

Table II lists, in rough chronological order, a number of experimental studies of the growth of near-surface regions of acceptor passivation in silicon. From any such experiment, a quantity with the dimensions...

SOME MEASUREMENTS OF THE DEVELOPMENT OF ACCEPTOR-PASSIVATION PROFILES BENEATH HYDROGENATED... 

Reference Acceptor passivated and cone, in cm-3 Mode of hydrogenation and temperature Mode of measurement of passivation Distinctness of plateau... 

L2/t VALUES DESCRIBING THE WIDTHS L OF ACCEPTOR-PASSIVATION PLATEAUS, FOR VARIOUS EXPERIMENTAL CONDITIONS. THE QUANTITITE5 TO THE LEFT OF THE DOUBLE LINE REPRESENT DIRECT RESULTS OF THE MEASUREMENTS THOSE TO THE RIGHT SHOW HOW ONE COULD DRAW CONCLUSIONS ABOUT REPRESENTATIVE VALUES OF n+ DURING HYDROGENATION FROM EQ. (105) AND AN ASSUMPTION ABOUT D+. THE ILLUSTRATIVE VALUES USED FOR THE LATTER CORRESPOND TO THE SOLID LINE IN FIG. 18 FOR THE H CASES AND TO THE DOTTED LINE... 

Figure 21 shows, for specimens similar to those of Fig. 20, the SIMS profiles of total deuterium and the distribution of deuterium taking part in acceptor passivation as obtained by C-V profiling for two conditions of deuteration. Both involved one hour exposure to plasma discharge products at 200°C, but one was with zero bias applied to the junction during this time, the other with 10 V reverse bias. The main features of these... 

Jacques Chevallier, Hydrogen Diffusion and Acceptor Passivation in Diamond Jurgen Ristein, Structural and Electronic Properties of Diamond Surfaces John C. Angus, Yuri V. Pleskov and Sally C. Eaton, Electrochemistry of Diamond Greg M. Swain, Electroanalytical Applications of Diamond Electrodes... 

Stockman SA, Hansen AW, Jackson SL, Baker JE, Stillman GE (1993) Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition. ApplPhys Lett 62 1248-1250. doi 10.1063/1.108748... 

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