GaN hexagonal pyramids

FIGURE 1 SEM images of MOVPE-grown GaN hexagonal pyramids on a Si02 mask patterned on GaN/LT AIN buffer/sapphire at the growth temperatures of (a) 1010, (b) 1025, and (c) 1050°C [5J. 

FIGURE 2 (a) Emission current and anode voltage characteristic of MOVPE-grown Si-doped GaN hexagonal pyramids on a SiQ2 mask patterned on GaN/HT AIN buffer/6H-SiC and (b) Fowler-Nordheim plot of I-V data [3],... 

Cl Microstructure and Lateral Epitaxy of Selectively Grown GaN Hexagonal Pyramids... 

FIGURE 1 (a) Microstructure of a hexagonal GaN pyramid array, as revealed by low magnification TEM. 

---