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Rutherford Back-scattering Spectroscopy RBS

Rutherford back-scattering spectroscopy (RBS) is one of the most frequently used techniques for quantitative analysis of composition, thickness, and depth profiles of thin solid films or solid samples near the surface region. It has been in use since the nineteen-sixties and has since evolved into a major materials-characterization technique. The number and range of applications are enormous. Because of its quantitative feature, RBS often serves as a standard for other techniques. [Pg.141]

For direct back-scattering through 180°, the lowest value of the energy ratio is given by  [Pg.142]

If Ml = M2, the incident particle is at rest after a central collision and all the energy is transferred to the target atom. For target atoms with M2 Mi no back-scattering occurs. [Pg.142]

The situation is illustrated in Fig. 3.47. The upper part shows a thin film of Ni deposited on a Si substrate. Only particles scattered from the front surface of the Ni film have an energy given by the kinematic equation, Eq. (3.28), Fi = fCNi o- As particles traverse the solid, they lose energy along the incident path. Particles scattered from a Ni atom at the Si-Ni interface therefore have an energy smaller than On the [Pg.142]

For Si atoms the kinematic factor is smaller, fCg, because of their lower mass. [Pg.142]


Absolute crystallographic polarity of cBN crystals was determined by Rutherford back-scattering spectroscopy (RBS) using helium ion beam (98). [Pg.505]

XPS only gives information on the cationic Ce species. To obtain information on the anion species, as seen above, vibrational techniques can be used but for this particular experiment they did not provide much information on the reaction with the surface. This may in part be due to the thicker oxides that were on the surface that may have obscured the anionic inhibitor phase. In this instance, Rutherford back-scattering spectroscopy (RBS) was used. RBS is a nuclear technique which relies on measuring the energy of either a-particles or protons backscattered from nuclei in the sample. This higher atomic number species will generally have greater sensitivity. [Pg.176]

Abstract Surface analyses have been one of the key technologies for corrosion control and surface finishing. It is very important that the most appropriate apparatus for the purpose of the analyses should be selected from various analytical techniques. In this chapter, surface analytical methods for corrosion control and surface finishing, such as X-ray fluorescence analysis (XRF), X-ray diffraction analysis (XRD), X-ray photo-electron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Auger electron spectroscopy (AES), Secondary ion mass spectrometry (SIMS), Rutherford back-scattering spectrometry (RBS), Surface-enhanced Raman spectroscopy (SERS), Fourier-transform infrared spectroscopy (FTIR), and so on, are briefly introduced. [Pg.47]

Fig. 1. Experimental techniques available for surface studies. SEM = Scanning electron microscopy (all modes) AES = Auger electron spectroscopy LEED = low energy electron diffraction RHEED = reflection high energy electron diffraction ESD = electron stimulated desorption X(U)PS = X-ray (UV) photoelectron spectroscopy ELS = electron loss spectroscopy RBS = Rutherford back scattering LEIS = low energy ion scattering SIMS = secondary ion mass spectrometry INS = ion neutralization spectroscopy. Fig. 1. Experimental techniques available for surface studies. SEM = Scanning electron microscopy (all modes) AES = Auger electron spectroscopy LEED = low energy electron diffraction RHEED = reflection high energy electron diffraction ESD = electron stimulated desorption X(U)PS = X-ray (UV) photoelectron spectroscopy ELS = electron loss spectroscopy RBS = Rutherford back scattering LEIS = low energy ion scattering SIMS = secondary ion mass spectrometry INS = ion neutralization spectroscopy.
RBS, HEIS Rutherford Back Scattering, High Energy Ion Scattering (Spectroscopy)... [Pg.153]

Studies of the surface (up to a 10 nm depth with XPS) and depth (RBS and SIMS) of the implanted layer were carried out with the help of electron spectroscopy for chemical analysis (ESCA) techniques. (XPS = X-ray photoelectron spectroscopy RBS = Rutherford back-scattering SIMS = secondary ion mass spectroscopy.)... [Pg.599]


See other pages where Rutherford Back-scattering Spectroscopy RBS is mentioned: [Pg.141]    [Pg.141]    [Pg.145]    [Pg.147]    [Pg.170]    [Pg.580]    [Pg.330]    [Pg.263]    [Pg.38]    [Pg.141]    [Pg.141]    [Pg.145]    [Pg.147]    [Pg.170]    [Pg.580]    [Pg.330]    [Pg.263]    [Pg.38]    [Pg.464]    [Pg.169]    [Pg.274]    [Pg.246]    [Pg.272]    [Pg.293]    [Pg.316]    [Pg.181]    [Pg.316]    [Pg.10]    [Pg.355]    [Pg.279]    [Pg.58]    [Pg.17]    [Pg.152]    [Pg.325]   


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