Resist processing exposure

Figure 44. A schematic representation of the plasma developed x-ray resist process. Exposure serves to covalenty bind the monomer (m) into the polymer matrix (p). Heating (fixing) drives out (volatilizes) the monomer except where it is "locked in place" by exposure. Plasma treatment converts the silicon to Si02 which retards the etch rate in the exposed areas through formation of a metallic oxide (MO) layer.

In other work, the impact of thermal processing on linewidth variation was examined and interpreted in terms of how the resist s varying viscoelastic properties influence acid diffusion (105). The authors observed two distinct behaviors, above and below the resist film s glass transition. For example, a plot of the rate of deprotection as a function of post-exposure processing temperature show a change in slope very close to the T of the resist. Process latitude was improved and linewidth variation was naininiized when the temperature of post-exposure processing was below the film s T. 

Recently, nonionic acid precursors based on nitrobenzyl ester photochemistry have been developed for chemically amplified resist processes (78-80). These ester based materials (Figure 8) exhibit a number of advantages over the onium salt systems. Specifically, the esters are easily synthesized, are soluble in a variety organic solvents, are nonionic in character, and contain no potential device contaminants such as arsenic or antimony. In addition, their absorption characteristics are well suited for deep-UV exposure. 

Three approaches have been identified that reduce susceptibility of CA resists to airborne contamination. In the first, process engineering changes such as the addition of special activated carbon filters to the environmental chambers surrounding the exposure tools (76,79), overcoating the resist with a soluble protective film to isolate the resist from the environment (77,80,81), or modifications of the process flow to minimize the time interval between exposure and post-exposure bake have been shown to improve CA resist processibility. 

X-ray lithography also takes advantage of the increased resist sensitivity due to the thinner imaging films of multilayer systems. Thinner imaging films further improve X-ray resolution by minimizing the penumbra effect, a problem associated with an uncollimated X-ray beam. Consequently, the oblique exposure of features near pattern edges are minimized by multilevel resist processes, thereby restoring the desired profile. 

Brominated poly(l-trimethylsilylpropyne) is an example of a substituted polyacetylene that is suitable for bilevel-resist processes (34). Requiring both exposure and postexposure bake (PEB) steps, samples of the polypropyne having a mole fraction of bromine from 0.1 to 0.2 per monomer unit exhibit sensitivities in the order of 25 mj/cm. Submicrometer resolution has been demonstrated, and etching-rate ratios relative to hard-baked photoresist planarizing layers are —1 25. 

Figure 7.7 SEM of high-resolution images printed in AZ 7900 (DNQ-sulfonate/novolac positive i-line resist). Processing conditions resist thickness 0.748 iJim, BARC(BARLi) thickness 1920 A, soft bake at 90°C for 90 s, exposure tool Canon 300014, NA 0.63, sigma 0.65, PEB 110°C for 60-s, 64 s single puddle NMD-W developer at 20.5X. (Courtesy of R. Damrnel. )...

Once the resist-coated wafer has been soft baked in the track system, it is cooled and sent into the wafer stage of the exposure tool. Resist processing equipment is commonly interfaced directly with an exposure tool, in which case the wafer... 

That most advanced resists today are printing features much smaller than dictated by the Rayleigh resolution criterion is a testament to the extremely high contrast these materials possess. Historically, the contribution of resists and resist processes in resolution of printed features for each technology node far outweighed contributions from exposure tool improvements. 

Each approach has its characteristic advantages and disadvantages due to the underlying technology and the materials issues involved (see the remainder of this section). In contrast, SLR schemes are relatively simple processes, can have moderate levels of resolution and etch resistance, and good hnearity, but they suffer from reflective swing problems and small depths of focus, and are limited to low aspect ratios. Irrespective of the resist process approach chosen, chemical amplification continues to be the dominant exposure mechanism of the imaging layer. 

The plasma-assisted shrink techniques (e.g., MOTIF ) use plasma to deposit a thin film that conformally coats contact holes and spaces printed in resists, which on dry etching result in smaller contact holes and spaces. In the remainder of this section, we provide a more detailed treatment of the postexposure-hased singlelayer exposure techniques employed in advanced resist processing. 

The durability of materials describes their resistance against exposure to chemicals or radiation in general. Insufficient durability of foils shows mostly in processes of expansion, softening or embrittlement of the material. This process is reinforced by higher temperatures. 

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