Reflection high energy electron spectroscopy

Rutherford Backscattering Spectroscopy Reflection High-Energy Electron Diffraction Scanning Electron Microscopy Surface (Sensitive) Extended X-Ray Absorption Fine Structure... 

Rutherford backscattering spectroscopy reflected high energy electron diffraction scanning Auger microscopy... 

Ion neutralization spectroscopy. f Reflection high energy electron diffraction. 

The surface and the bulk PSC crystal quality was studied by reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). Surface chemical compositions were determined with Auger electron spectroscopy (AES) and secondary-ion mass spectrometry (SIMS). Atomic force microscopy (AFM), transmission and scanning electron microscopy (TEM and SEM) were used to monitor PSC morphology and structure. 

Fig. 1. Experimental techniques available for surface studies. SEM = Scanning electron microscopy (all modes) AES = Auger electron spectroscopy LEED = low energy electron diffraction RHEED = reflection high energy electron diffraction ESD = electron stimulated desorption X(U)PS = X-ray (UV) photoelectron spectroscopy ELS = electron loss spectroscopy RBS = Rutherford back scattering LEIS = low energy ion scattering SIMS = secondary ion mass spectrometry INS = ion neutralization spectroscopy.

UPS Ultraviolet Photoelectron Spectroscopy XPS X-ray Photoelectron Spectroscopy AES Auger Electron Spectroscopy ESCA Electron Spectroscopy for Chemical Analysis TDMS Thermal Desorption Mass Spectroscopy LEED Low-Energy Electron Diffraction RHEED Reflection High-Energy Electron Diffraction EELS Electron Energy Loss Spectroscopy... 

Fig. 2. Methods of surface analysis based on the examination of reflected radiation and/or particles. Abbreviations MIRS, multiple interference reflection spectroscopy LEED, low energy electron diffraction RHEED, reflected high energy electron diffraction ESCA, electron spectroscopy for chemical analysis (Ref. 7).

While the spatial resolution of AES, XPS and SIMS continues to improve, atomic scale analysis can only be obtained by transmission electron microscopy (TEM), combined with energy dispersive X-ray spectroscopy (EDX) or electron energy loss spectroscopy (EELS). EDX detects X-rays characteristic of the elements present and EELS probes electrons which lose energy due to their interaction with the specimen. The energy losses are characteristic of both the elements present and their chemistry. Reflection high-energy electron diffraction (RHEED) provides information on surface slmcture and crystallinity. Further details of the principles of AES, XPS, SIMS and other techniques can be found in a recent publication [1]. This chapter includes the use of AES, XPS, SIMS, RHEED and TEM to study the composition of oxides on nickel, chromia and alumina formers, silicon, gallium arsenide, indium phosphide and indium aluminum phosphide. Details of the instrumentation can be found in previous reviews [2-4]. 

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