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Principles of Semiconductor Physics

The understanding of electrochemical processes at semiconductor electrodes naturally depends on a knowledge of semiconductor physics. This chapter presents a brief introduction to this field only those subjects relevant to semiconductor electrochemistry are included here. For detailed information, the reader is referred to the standard textbooks on semiconductor physics by C. Kittel [1], R. A. Smith [2], T. S. Moss [3] and Pankove [4]. [Pg.1]


Mandelis, A., Batista, J. Shaughnessy, D. Infrared photocarrier radiometry of semiconductors Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects. Phys. Rev. B Condens. Matter 67, 205208/1-205208/18 (2003). [Pg.233]

Principles of Surface Physics by E. Bechstedt Provides a contemporary overview of surface physics from a theoretical microscopic perspective with a particular emphasis on semiconductor surfaces. [Pg.67]

However, the principle idea in the studies of that time dealt with assessment of possible changes of inherent properties of a semiconductor caused by its interaction with gaseous phase. In other words, this question was directly linked with problems of quickly developing in that time semiconductor physics. The well known gas cycle of Bardeen-Brattain [81] provides a typical example of the situation of those days. This cycle deals with a opportunity to control the potential of the surface of a semiconductor by adsorption means. [Pg.25]

In conclusion it should be emphasized that the principle objective of this section was to prove the physical-chemical suitability of semiconductor oxide sensors for quantitative measurements of extremely small concentrations of atoms of many metals both in vacuum and deposited... [Pg.192]

In this type of cell both electrodes are immersed in the same constant pH solution. An illustrative cell is [27,28] n-SrTiOs photoanode 9.5-10 M NaOH electrolyte Pt cathode. The underlying principle of this cell is production of an internal electric field at the semiconductor-electrolyte interface sufficient to efficiently separate the photogenerated electron-hole pairs. Subsequently holes and electrons are readily available for water oxidation and reduction, respectively, at the anode and cathode. The anode and cathode are commonly physically separated [31-34], but can be combined into a monolithic structure called a photochemical diode [35]. [Pg.124]

Neaiueii, D.A.. Semiconductor Physics and Devices. Busic Principles, 2nd Edition, McGraw-Hill Higher Education, New York, NY, 1997 Pool, R. Cluster s Strange Morsels of Matter. Science, 1186 (June 8. 1990). Prinz, G.A. Hybrid Ferromagnetic Semiconductor Structures, Science, 1092 (November 23, 1990). [Pg.1471]

Whitesides reviewed the principles of molecular self-assembly over a decade ago,9 including the possibility of using self-assembly to make semiconductor devices. We recently reviewed our extensive work in the field of molecular electronics10 as well as the sub-field of molecular wires,11 both of which include self-assembly as a necessary step in the construction of devices. A review of the physical characteristics of molecular electronics devices has recently appeared,12 along with a review of the genesis of molecular electronics.13 The semiconductor industry has realized that research achievements in the molecule electronics and self-assembly fields could enable the development of methods to bypass existing roadblocks.14... [Pg.80]

Sviridov, Dmitry V. he obtained his Ph.D. (1987) and D.Sc. (1999) degrees in Physical Chemistry from Belarussian State University (BSU). He currently holds an appointment of Professor of Chemistry at BSU and Principle Investigator in the Institute for Physico-Chemical Problems, BSU, Minsk, Belarus Republic. His scientific interests include photoelectrochemistry of semiconductors and molecular aggregates, electrocatalysis and environmental photocatalysis. E-mail ... [Pg.270]

In Chapter 1 we explain the motivation and basic concepts of electrodeposition from ionic liquids. In Chapter 2 an introduction to the principles of ionic liquids synthesis is provided as background for those who may be using these materials for the first time. While most of the ionic liquids discussed in this book are available from commercial sources it is important that the reader is aware of the synthetic methods so that impurity issues are clearly understood. Nonetheless, since a comprehensive summary is beyond the scope of this book the reader is referred for more details to the second edition of Ionic Liquids in Synthesis, edited by Peter Wasserscheid and Tom Welton. Chapter 3 summarizes the physical properties of ionic liquids, and in Chapter 4 selected electrodeposition results are presented. Chapter 4 also highlights some of the troublesome aspects of ionic liquid use. One might expect that with a decomposition potential down to -3 V vs. NHE all available elements could be deposited unfortunately, the situation is not as simple as that and the deposition of tantalum is discussed as an example of the issues. In Chapters 5 to 7 the electrodeposition of alloys is reviewed, together with the deposition of semiconductors and conducting polymers. The deposition of conducting polymers... [Pg.397]

The values of Vm and are key experimental quantities that are used to characterize the physical properties of semiconductor/metal interfaces. If Vbi or b can be determined, then W, Q, E(x), and most of the other important thermodynamic quantities that are relevant to the electrical properties of the semiconductor contact can be readily calculated using the simple equations that have been presented above. Methods to determine these important parameters can be found in the literature. However, it would be useful at this point in the discussion to consider what values of and Vbi are expected theoretically for a given semiconductor/metal interface. By definition, = (/ip.m - at the electrode surface (Figure 4b). Thus, in principle, the barrier height can be predicted if the energies of the semiconductor band edges and the electrochemical potential of the metal can be determined with respect to a common reference energy. [Pg.4348]


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