Polycrystalline silicon nitride

Pezzotti, G., Tanaka, I. and Nishida, T., (1993), Intrinsic fracture energy of polycrystalline silicon nitride , Phil. Mag. Lett., 67 (2), 95-100. 

Schorner, R., et al., Enhanced Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Transistors Fabricated with Standard Polycrystalline Silicon Technology and Gate-Oxide Nitridation, Applied Physics Letters, Vol. 80, No. 22, June 3, 2002, p. 176. 

This type of material is commonly used in the production of semiconductor devices.57 The silica layer is used as a starting layer for integrated circuit (IC) build-up. IC layer materials range from single crystals and doped polycrystalline silicon, silicon nitride, thermally-grown oxide to vapour deposited or sputtered metal or metal silicide layers. Structural adhesion of the various layers is obtained by the application of organosilanes, such as AEAPTS, APTS and GPTS. 

Polycrystalline Amorphous Epitaxial silicon Carbon fiber Filaments Carbon nanotubes Silicon dioxide Tungsten Silicon nitride Titanium nitride... 

From the point of view of the volume of production, polycrystalline alumina is the material most frequently used as ceramics for structural applications. However, in comparison with for example, silicon nitride, where the influence of various additives on microstructure and properties has been well characterized and understood, and despite several decades of lasting research effort, alumina remains a material with many unknown factors yet to be revealed. Alumina-based materials can be divided roughly into three groups ... 

Silicon nitride-based ceramics are polycrystalline materials that consist at least of two phases, the silicon nitride grains and the grain boundary. In this chapter, an attempt will be made to describe, separately, the properties of both the grain and grain boundary phases. The effect of combining these phases, with regards to the mechanical properties of the materials, will also be discussed. 

Silicon nitride-based polycrystalline ceramic materials have the potential for structural applications at both room temperature and elevated temperatures, despite containing silicate/silicate-rich oxynitride grain boundary phases. These are generally much weaker compared to the silicon nitride single crystal grains of which the... 

This includes single crystal silicon [15], germanium [22] and alumina [10] fibers. Polycrystalline fibers can grow either by a VLS or a VS phase transformation when the incident laser power (focal temperature) is intermediate, and supports the growth of a fiber with a semisolid tip. This includes polycrystalline silicon [15], boron [5] and silicon carbide fibers [23]. Amorphous fibers are obtained by a VS phase transformation when the incident laser (focal temperature) is low, and supports the growth of a fiber with a hot but solid tip. This includes amorphous silicon [15], boron [12], carbon [13] [16], silicon carbide [23], and silicon nitride [17] fibers. 

In this process, the substrate is placed inside a reactor supplied by different gases [21], The principle of the process is that a chemical reaction takes place between the source gases producing a solid material which condenses on all surfaces inside the reactor. CVD is widely used in the semiconductor industry to deposit various materials such as polycrystalline, amorphous, and epitaxial silicon, carbon fiber, filaments, carbon nanotubes, Si02, silicon-germanium, tungsten, silicon nitride, silicon oxynitride, titanium nitride, and various high-k dielectrics. 

PECVD has been used industrially for several decades to deposit oxides and nitrides of silicon, polycrystalline silicon, and epitaxial silicon (Tedrow and Reif, 1994) for microelectronics. There are also many applications in the automotive. 

Self-diffusion coefficients of nitrogen in polycrystalline alpha- and beta-silicon nitride were measured by using a gas-solid isotope exchange technique with as a tracer at 1200 to 14IOC. The diffusion coefficients for single-crystal grains could be expressed as ... 

RE, REL, REO, REOL, RER, RES, REX, REXH, REXR. Symbols for various shapes of ceramic wall tiles and fittings (see Fig. 7, p350). Reaction-bonding. The formation of a polycrystalline ceramic by a chemical reaction between the powder and a gas or a liquid. Cf. reaction sintering and see silicon nitride, silicon carbide. 

Dichlorosilane is primarily used in the electronics industry for such applications as growth of epitaxial or polycrystalline silicon and chemical vapor deposition of silicon dioxide and silicon nitride. 

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