Poly PMPS

The synthesis of isotactic polymers of higher a-olefins was discovered in 1955, simultaneously with the synthesis of isotactic PP (1,2) syndiotactic polymers of higher a-olefins were first prepared in 1990 (3,4). The first commercial production of isotactic poly(l-butene) [9003-29-6] (PB) and poly(4-methyl-l-pentene) [9016-80-2] (PMP) started in 1965 (5). 

Electrical Properties. AH polyolefins have low dielectric constants and can be used as insulators in particular, PMP has the lowest dielectric constant among all synthetic resins. As a result, PMP has excellent dielectric properties and alow dielectric loss factor, surpassing those of other polyolefin resins and polytetrafluoroethylene (Teflon). These properties remain nearly constant over a wide temperature range. The dielectric characteristics of poly(vinylcyclohexane) are especially attractive its dielectric loss remains constant between —180 and 160°C, which makes it a prospective high frequency dielectric material of high thermal stabiUty. 

Another interesting applications area for fullerenes is based on materials that can be fabricated using fullerene-doped polymers. Polyvinylcarbazole (PVK) and other selected polymers, such as poly(paraphcnylene-vinylene) (PPV) and phenylmethylpolysilane (PMPS), doped with a mixture of Cgo and C70 have been reported to exhibit exceptionally good photoconductive properties [206, 207, 208] which may lead to the development of future polymeric photoconductive materials. Small concentrations of fullerenes (e.g., by weight) lead to charge transfer of the photo-excited electrons in the polymer to the fullerenes, thereby promoting the conduction of mobile holes in the polymer [209]. Fullerene-doped polymers also have significant potential for use in applications, such as photo-diodes, photo-voltaic devices and as photo-refractive materials. 

While "conventional positive photoresists" are sensitive, high-resolution materials, they are essentially opaque to radiation below 300 nm. This has led researchers to examine alternate chemistry for deep-UV applications. Examples of deep-UV sensitive dissolution inhibitors include aliphatic diazoketones (61-64) and nitrobenzyl esters (65). Certain onium salts have also recently been shown to be effective inhibitors for phenolic resins (66). A novel e-beam sensitive dissolution inhibition resist was designed by Bowden, et al a (67) based on the use of a novolac resin with a poly(olefin sulfone) dissolution inhibitor. The aqueous, base-soluble novolac is rendered less soluble via addition of -10 wt % poly(2-methyl pentene-1 sulfone)(PMPS). Irradiation causes main chain scission of PMPS followed by depolymerization to volatile monomers (68). The dissolution inhibitor is thus effectively "vaporized", restoring solubility in aqueous base to the irradiated portions of the resist. Alternate resist systems based on this chemistry have also been reported (69,70). 

Syntheses. The polymerization reaction of poly(2-methyl pentene-1 sulfone) (PMPS) was carried out at -78°C. Purified 2-methyl pentene-1 (42 grams) and condensed SO, (about 125 grams) at a molar ratio of 1 to 4 were charged into the reaction system under atmospheric pressure, and the reaction was Initiated by 2 milliliters of butyl hydroperoxide. The white polymer mass was purified by dissolving 1n acetone, then precipitating Into methanol (8). 

Figure 4 Dependency of main-chain UV cr-a absorption maximum on chain length for poly(methylphenylsilylene) (PMPS) in toluene.18 Adapted with permission from Jones, R. G. Wong, W. K. C. Holder, S. J. Organometallics 1998, 17, 59-64. 1998 American Chemical Society.

Functionalization of polysilanes by chemical modification (post-polymerization) was covered in COMC II (1995) (chapter Organopolysilanes, p 101), where the formation of precursor polysilanes with potentially functionalizable side groups such as chloride, type 34 (via HCI/AICI3 chlorodephenylation of PMPS), 6 triflate, type 35 (via triflate replacement of phenyl groups)135,137 or alkyl halide (via chloromethylation of phenyl groups,138,139 type 36, or addition of HC1 or HBr to double bonds140) was discussed. Four other precursor polysilanes, which utilize the reactivity of the Si-Cl or Si-H bond, have been successfully applied in functionalization since COMC (1995) perchloropolysilane, 17 (see Section 3.11.4.2.2.(i) for synthesis),103 poly[methyl(H)silylene-f >-methylphenylsilylene],... 

Recently, the first example of chiral solvation of a polysilane was demonstrated dissolution of the inherently optically inactive poly(methylphenylsilyene), PMPS, and poly(hexylmethylsilylene), PHMS, in the optically active solvents (V)-2-methyl-l-propoxybutane and (V)-(2-methylbutoxymethyl)benzene induced the polymer chains to adopt PSS helical conformations as evidenced by (positive-signed) Cotton effects almost coincident with the UV a-a transition at 340 and 305 nm, respectively.332... 

Structural effects on properties were also studied in detail by a group from Tohoku University, who prepared poly(methylphenylsilylene) (PMPS Mv = 3,120, Mw/Mn = 1.76) and poly(phenylsilyne) (131 poly(penfafluorophenylrilyne)(PPS) 4/w = 1,090, Mw/M = 1.30) by Wurtz-type coupling using sodium and 18-crown-6 in hot toluene and compared their optical and electrical properties.359,360... 

Interest in solution inhibition resist systems is not limited to photoresist technology. Systems that are sensitive to electron-beam irradiation have also been of active interest. While conventional positive photoresists may be used for e-beam applications (31,32), they exhibit poor sensitivity and alternatives are desirable. Bowden, et al, at AT T Bell Laboratories, developed a novel, novolac-poly(2-methyl-l-pentene sulfone) (PMPS) composite resist, NPR (Figure 9) (33,34). PMPS, which acts as a dissolution inhibitor for the novolac resin, undergoes spontaneous depolymerization upon irradiation (35). Subsequent vaporization facilitates aqueous base removal of the exposed regions. Resist systems based on this chemistry have also been reported by other workers (36,37). 

Ito has also extended this type of photochemistry to the electron-beam-induced catalytic acidolysis of acid-labile main chain acetal linkages in polyphthaldehyde. These polymers, like the poly(2-methylpentene-l-suIfone) (PMPS) sensitizer in NPR resist described earlier have ceiling temperatures on the order of -40 °C. As normally used, the polyaldehydes are end-capped by acylation or alkylation and are thus quite stable. The main chain bonds are very sensitive to acid-catalyzed cleavage which in turn allows the whole chain to revert to monomer in an unzipping sequence similar to that occuring in irradiated PMPS. Irradiation of polyphthaldehyde containing 10% of a suitable sensitizer such as triphenylsulfonium hexafluoroarsenate with either deep UV... 

The structure of a poly(4-methyl-l-pentene) (TPX) homopolymer is shown in Figure 4.1. Actually, TPX is a registered trademark from various companies, with a different meaning. Sometimes TPX is also abbreviated as PMP. 

Many of the major peaks in the acidic eluant samples were poly methyl polysiloxanes (PMPS), which are believed to be artifacts from the column or septa. When a nonacidic solvent such as ether was analyzed, very few siloxane compounds were found. 

MC MDI MEKP MF MMA MPEG MPF NBR NDI NR OPET OPP OSA PA PAEK PAI PAN PB PBAN PBI PBN PBS PBT PC PCD PCT PCTFE PE PEC PEG PEI PEK PEN PES PET PF PFA PI PIBI PMDI PMMA PMP PO PP PPA PPC PPO PPS PPSU Methyl cellulose Methylene diphenylene diisocyanate Methyl ethyl ketone peroxide Melamine formaldehyde Methyl methacrylate Polyethylene glycol monomethyl ether Melamine-phenol-formaldehyde Nitrile butyl rubber Naphthalene diisocyanate Natural rubber Oriented polyethylene terephthalate Oriented polypropylene Olefin-modified styrene-acrylonitrile Polyamide Poly(aryl ether-ketone) Poly(amide-imide) Polyacrylonitrile Polybutylene Poly(butadiene-acrylonitrile) Polybenzimidazole Polybutylene naphthalate Poly(butadiene-styrene) Poly(butylene terephthalate) Polycarbonate Polycarbodiimide Poly(cyclohexylene-dimethylene terephthalate) Polychlorotrifluoroethylene Polyethylene Chlorinated polyethylene Poly(ethylene glycol) Poly(ether-imide) Poly(ether-ketone) Polyethylene naphthalate Polyether sulfone Polyethylene terephthalate Phenol-formaldehyde copolymer Perfluoroalkoxy resin Polyimide Poly(isobutylene), Butyl rubber Polymeric methylene diphenylene diisocyanate Poly(methyl methacrylate) Poly(methylpentene) Polyolefins Polypropylene Polyphthalamide Chlorinated polypropylene Poly(phenylene oxide) Poly(phenylene sulfide) Poly(phenylene sulfone)... 

Some grafting between polystyrene and polyethylene may occur, but we think not. Substantial amounts of polystyrene (but not all) have been extracted from the blend samples by soaking the specimens in refluxing THF for several days. We suspect that if grafting does occur, it is not a significant contributor to polystyrene mass uptake. All the polystyrene could be extracted from a 50 wt % polystyrene/poly(4-methyl-l-pentene) (PMP) blend that was prepared by essentially the same procedure. The backbone of PMP (with two tertiary C —H bonds per repeat unit) is likely more susceptible to radical grafting than HDPE. 

---