Poly etching

The evaluation of an HFIP/TBA copolymer and acetal functionalized HFIP polymers was compared against a hydroxystyrene/t-butyl acrylate copolymer (HOST/TBA) under the same conditions. The choice to look at polymers and not resists was based on removing the effects of other resist components on the plasma etch rate and focusing only on the polymer etch characteristics. The rates and selectivities of both plasma etches are presented in Table IV. It can be seen that the HFEP/TBA polymer has a higher etch rate than the HOST/TBA polymer in both the oxide and poly etch. The use of acetal fiinctionalized HFIP gave the... 

The plasma etch rates for the fluorocarbon polymers were determined under two rqiresentative plasma etch processes, an oxide etch and a poly etcL The fluoroaromatic acetals are a significant inqnovement over the fluoroaromatic ester etch rates. The most promisii fiuoroaromatic acetal is the HFIP/BOM copolymer in which plasma etch rates are comparable or superior to those of the ESCAP polymer under typical oxide or poly etch conations. When film removal time is used as the figure of merit in evaluating plasma etch resistance, the HFIP/BOM polymer provides over a two-fold inqrrovement in plasma etch resistance over die ESCAP polymer. 

Poly(phenylquinoxaline—arnide—imides) are thermally stable up to 430°C and are soluble in polar organic solvents (17). Transparent films of these materials exhibit electrical insulating properties. Quinoxaline—imide copolymer films prepared by polycondensation of 6,6 -meth5lene bis(2-methyl-3,l-benzoxazine-4-one) and 3,3, 4,4 -benzophenone tetracarboxyUc dianhydride and 4,4 -oxydianiline exhibit good chemical etching properties (18). The polymers are soluble, but stable only up to 200—300°C. 

Acid anhydride-diol reaction, 65 Acid anhydride-epoxy reaction, 85 Acid binders, 155, 157 Acid catalysis, of PET, 548-549 Acid-catalyzed hydrolysis of nylon-6, 567-568 of nylon-6,6, 568 Acid chloride, poly(p-benzamide) synthesis from, 188-189 Acid chloride-alcohol reaction, 75-77 Acid chloride-alkali metal diphenol salt interfacial reactions, 77 Acid chloride polymerization, of polyamides, 155-157 Acid chloride-terminated polyesters, reaction with hydroxy-terminated polyethers, 89 Acid-etch tests, 245 Acid number, 94 Acidolysis, 74 of nylon-6,6, 568... 

Polystyrene-PDMS block copolymers4l2), and poly(n-butyl methacrylate-acrylic acid)-PDMS graft copolymers 308) have been used as pressure sensitive adhesives. Hot melt adhesives based on polycarbonate-PDMS segmented copolymers 413) showed very good adhesion to substrates with low surface energies without the need for surface preparation, such as etching. 

Good bonding was obtained to several substrates under aqueous conditions. Values obtained were 41 to 10-3 MPa to composite resins, and 9-8 to 15-6 MPa to stainless steel (Table 9.6). They were also reported as adhering to porcelain. No adhesion was obtained to untreated dentine or enamel. The cements could be bonded to enamel etched with add (3-5 MPa) and to dentine conditioned with poly(acrylic acid) (10 MPa). 

The 02 reactive ion etching rates of poly(disilanylenephenylene) 10 and 11, and polyimide (PIQ) were measured. As can be seen in Figure 4, the polymers 10 and 11 show very high etching resistance against the oxygen plasma, compared with the PIQ. 

Polyamide and polyester fibres are generally scoured using an alkyl poly(oxyethylene) sulphate and sodium carbonate. Some polyester qualities are subjected to a causticisation treatment with sodium hydroxide in the presence of a cationic surfactant to give a lighter fabric with a silkier handle [154,156]. This treatment involves etching (localised saponification) of the polyester surface and is broadly analogous to the S-finish used on triacetate fibres. The process has attracted considerable interest in recent years but its... 

Zhang Y. Synchrotron Radiation Direct Photo Etching of Polymers. Vol. 168, pp. 291-340. Zheng, J. and Swager, T. M. Poly(arylene ethynylenejs in Chemosensing and Biosensing. Vol. 177, pp. 151-177. 

Cui, T. Liang, G. Varahramyan, K. 2003. An organic poly(3,4-ethylenedioxythio-phene) field-effect transistor fabricated by spin coating and reactive ion etching. IEEE Trans. Electron Dev. 50 1419-1422. 

Figure 6. O -RIE etching of poly(cyclohexylmethylsilane) (PCHMS) — A —, and a hardbaked AZ-type photoresist ( — — ) etch conditions 10 mTorr, 40 SCCM, -232V, 110W,...

TiCU readily functionalizes hydrophilic polymers such as poly(vinyl alcohol), m-ciesol novolac and methacrylic acid copolymers as well as moderately hydrophobic polymers such as poly(methyl methacrylate), poly(vinyl acetate), poly(benzyl methacrylate) and fully acetylated m-cresol novolac. HCI4 did not react with poly(styrene) to form etch resistant films indicating that very hydrophobic films follow a different reaction pathway. RBS analysis revealed that Ti is present only on the surface of hydrophilic and moderately hydrophobic polymer films, whereas it was found diffused through the entire thickness of the poly(styrene) films. The reaction pathways of hydrophilic and hydrophobic polymers with HCI4 are different because TiCl is hydrolysed by the surface water at the hydrophilic polymer surfaces to form an etch resistant T1O2 layer. Lack of such surface water in hydrophobic polymers explains the absence of a surface TiC>2 layer and the poor etching selectivities. 

The factor f reduces the oscillation amplitude symmetrically about R - R0, facilitating straightforward calculation of polymer refractive index from quantities measured directly from the waveform (3,). When r12 is not small, as in the plasma etching of thin polymer films, the first order power series approximation is inadequate. For example, for a plasma/poly(methyl-methacrylate)/silicon system, r12 = -0.196 and r23 = -0.442. The waveform for a uniformly etching film is no longer purely sinusoidal in time but contains other harmonic components. In addition, amplitude reduction through the f factor does not preserve the vertical median R0 making the film refractive index calculation non-trivial. 

---