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Plasma oxygen cleaning

Silicon wafers were oxygen plasma-cleaned in a parallel plate reactor at 400 W power, 300 mTorr pressure for 5 min. The gas flow was set to 100 seem total,... [Pg.401]

Table 1 shows the results for the 0%, 2%, and 5% added CF4 in the oxygen plasma cleaning of the silicon wafers, as well as the effect of APS application on the surface composition. [Pg.403]

Figure 1. Wide scan spectra over the region 550-50 eV. Key a, oxygen plasma cleaned glass b, aluminum foil c, solvent cleaned rayon fibers d, solvent cleaned nylon fibers e, solvent cleaned wool fiber f, copolymer film (one monomer contains a chlorine substituted side chain) g, sulfonated 8% cross-linked styrene di-vinylbenzene copolymer beads h, copolymer containing diphosphine chelating... Figure 1. Wide scan spectra over the region 550-50 eV. Key a, oxygen plasma cleaned glass b, aluminum foil c, solvent cleaned rayon fibers d, solvent cleaned nylon fibers e, solvent cleaned wool fiber f, copolymer film (one monomer contains a chlorine substituted side chain) g, sulfonated 8% cross-linked styrene di-vinylbenzene copolymer beads h, copolymer containing diphosphine chelating...
Most of these discussions regarding fluorine contamination of aluminum surfaces have focused on the conversion of aluminum oxide to fluoride or oxyfluoride. Evidence for similar conversions was included, and in extreme cases conversion to aluminum bonding quite similar to that in AIF3 was found. However, the poor adhesion of the samples skipping the O2 plasma treatment is related not to the fluorine contamination as such, but rather to the carbonaceous nature of the adsorbed materials, which is subjected to the plasma polymerization of TMS. Oxygen plasma cleaning removes this carbonaceous component, while the surface fluorine concentration is enhanced. [Pg.212]

Thin films of PS69o-b-PtBA12io diblock copolymer (e.g. purchased from Polymer Source Company, Dorval, Canada) are prepared by spin coating corresponding polymer solutions in toluene (cone. 10 mg/mL) onto oxygen plasma cleaned silicon wafers. [Pg.147]

Oxygen plasma cleaning. The integrated surface-micromachined wafer is exposed to an oxygen plasma to remove the photoresist and thus create free 3D structures as shown in Figure 5.2.9. [Pg.99]

All the instrumental parts that are expected to be coated with the polymer, including the waveguides for the OWFS and the balls/disks of all tribological instruments, were oxygen-plasma cleaned for ca. 2 min in a Harrick Plasma Cleaner/Sterilizer PDC-32G... [Pg.100]

All the instrumental parts that are expected to be in contact with the polymer solution, including the balls and disks of all tribological instruments, were oxygen-plasma cleaned for ca. 2 min in a Harrick Plasma Cleaner/Sterilizer PDC-32G instrument (Ossining, NY, USA) prior to the measurements. Before the plasma cleaning, the instrumental parts and the tribo-pair of ultra-thin-film interferometry and MTM were degreased by sonication in toluene for 10 min, followed by sonication in isopropanol for 10 min, and dried in nitrogen atmosphere. The pins, disks and assembly parts... [Pg.108]

The steel pins were cleaned by consecutive sonication in toluene for 5 min., in ethanol for 10 min., and distilled water for 5 min. Then, they were oxygen-plasma cleaned for 2 min. [Pg.136]

Particle Printing To transfer particles, a dedicated printing tool was employed. 1 Oxygen-plasma-cleaned plain silicon wafers were used as... [Pg.593]

Oxygen plasma cleaning (cleaning) Cleaning in an oxygen plasma where the contaminant is oxidized and vaporized. [Pg.666]


See other pages where Plasma oxygen cleaning is mentioned: [Pg.413]    [Pg.463]    [Pg.44]    [Pg.35]    [Pg.212]    [Pg.721]    [Pg.198]    [Pg.167]    [Pg.74]    [Pg.77]    [Pg.201]    [Pg.48]    [Pg.77]    [Pg.77]    [Pg.164]    [Pg.237]    [Pg.237]    [Pg.248]    [Pg.269]    [Pg.302]    [Pg.319]    [Pg.497]    [Pg.509]    [Pg.201]    [Pg.509]    [Pg.340]    [Pg.46]   
See also in sourсe #XX -- [ Pg.40 , Pg.167 ]




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