Physical properties silicon carbide

Limitations of Plasma CVD. With plasma CVD, it is difficult to obtain a deposit of pure material. In most cases, desorption of by-products and other gases is incomplete because of the low temperature and these gases, particularly hydrogen, remain as inclusions in the deposit. Moreover, in the case of compounds, such as nitrides, oxides, carbides, or silicides, stoichiometry is rarely achieved. This is generally detrimental since it alters the physical properties and reduces the resistance to chemical etching and radiation attack. However in some cases, it is advantageous for instance, amorphous silicon used in solar cells has improved optoelectronic properties if hydrogen is present (see Ch. 15). 

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (SijN ), and boron nitride (BN) offer a wide variety of unique physical properties such as high hardness and high structural stability under environmental extremes, as well as varied electronic and optical properties. These advantageous properties provide the driving force for intense research efforts directed toward developing new practical applications for these materials. These efforts occur despite the considerable expense often associated with their initial preparation and subsequent transformation into finished products. 

Whipple s rules, 20 138 Whisker reinforcement, 5 554, 555, 654 performance in ceramic—matrix composites, 5 572-575 physical properties, 5 557t synthesis, 5 642-643 and toughening, 5 622 Whiskers, silicon carbide, 22 533-534 White... 

The carbides and nitrides are well known for their hardness and strength, and this section will briefly compare a number of these properties with those of the pure metals. Concentration will be placed here on the first row compounds, since these constitute a complete series, and Mo and W, since these are the most commonly studied metals. As will be shown, the physical and mechanical properties of carbides and nitrides resemble those of ceramics not those of metals. Comparisons will be made with boron carbide (B4C), silicon carbide (SiC), aluminium nitride (AIN), silicon nitride (Si3N4), aluminium oxide (A1203), and diamond, as representative ceramic materials. 

NISTCERAM National Institute of Standards and Techology Gas Research Institute, Ceramics Division mechanical, physical, electrical, thermal, corrosive, and oxidation properties for alumina nitride, beryllia, boron nitride, silicon carbide, silicon nitride, and zirconia... 

What advantages do ceramics such as Silicon Carbide (eChapter 21.7) have relative to metals What are the disadvantages of ceramics Rotate the 3D model, and see if you can find a special orientation where planes of atoms are separated by largely empty space, devoid of bonds. What does the result of this investigation say about the physical properties of ceramics ... 

Interest in polysilanes was reawakened in 1975, when Yajima and Hayashi found that permethylpolysilane could be transformed into silicon carbide by heating at high temperatures. Soon afterward, papers on soluble, meltable polysilanes began to appear. The literature on polysilanes has grown rapidly since that time. The early focus on the synthesis and simple characterization of polysilanes has given way to detailed physical studies of the structure of these polymers, and of their electronic and photophysical properties. 

Table 19-1 Typical Physical Properties of Commonly Used Silicon Carbide...

Although the silicon atom has the same outer electronic structure as carbon its chemistry shows very little resemblance to that of carbon. It is true that elementary silicon has the same crystal structure as one of the forms of carbon (diamond) and that some of its simpler compounds have formulae like those of carbon compounds, but there is seldom much similarity in chemical or physical properties. Since it is more electro-positive than carbon it forms compounds with many metals which have typical alloy structures (see the silicides, p. 789) and some of these have the same structures as the corresponding borides. In fact, silicon in many ways resembles boron more closely than carbon, though the formulae of the compounds are usually quite different. Some of these resemblances are mentioned at the beginning of the next chapter. Silicides have few properties in common with carbides but many with borides, for example, the formation of extended networks of linked Si (B) atoms, though on the other hand few silicides are actually isostructural with borides because Si is appreciably larger than B and does not form some of the polyhedral complexes which are peculiar to boron and are one of the least understood features of boron chemistry. 

The bulk analysis of /3-SiC whiskers shows the least variation in chemistry. In some whiskers, the residual metals content can vary, most likely, as a result of additives that used as catalysts during synthesis. These include iron, cobalt, and chromium. Studies by Karasek et al. [56] have shown that the physical properties of silicon carbide whisker-reinforced composites do not correlate to the bulk properties of the whiskers significantly. This lack of significant correlation is mainly due to the fact that the important phase chemistry of the whisker-matrix interface is controlled by the matrix chemistry and the surface chemistry of the whiskers. There seems to be little impact of the diffusion of materials into or out of the bulk whisker material. 

Silicon carbide has attracted considerable interest because of its good mechanical and physical properties and chemical inertness. One of the most important applications of SiC is to produce a matrix reinforced by fibres, forming ceramic-matrix composites. These composite materials exhibit much better fracture toughness than monolithic ceramics. Compared with carbon/carbon composites, fibre-reinforced SiC matrix composites possess superior oxidation resistance and mechanical properties. The Si-C-H-Cl system (e.g. methyltrichlorosilane, CH3SiCl3) has been used for SiC deposition because it is easy to produce stoichiometric SiC deposits. 

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