Photoluminescence properties nanowires

Li, Y., G.W. Meng, L.D. Zhang and F. PhiUipp (2000). Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties. Applied Physics Letters, 76(15), 2011-2013. 

Zheng, M. J., Zhang, L. D., Li, G. H., Zhang, X. Y. and Wang, X. F. (2001) Ordered indium-oxide nanowire arrays and their photoluminescence properties . Applied Physics Letters, 79(6), 839-841. 

Song HW, Yu LX, Lu SZ et al (2004) Remarkable differences in photoluminescent properties between LaP04 Eu one-dimensional nanowires and zero-dimensional nanoparticles. Appl Phys Lett 85 470-472... 

Salhi B, Gelloz B, Koshida N, Patriarche G, Boukherroub R (2007) Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing. Phys Status Solidi A-Appl Mater 204 1302-1306... 

A copredpitation route to LaP04 Ln + nanowires and LaP04 Ln / LaP04 core-shell nanowires (where La = Ce +, Tb ) has recently been reported by Yang et Rare earth-doped nanomaterials are of considerable interest due to their photoluminescent properties, making them... 

Recently, photoluminescence properties of boron carbide nanowires were being studied and reported. Photoluminescence spectrum of a thin film made out of B4C nanowires exhibited a broad band at 638 nm, which strongly suggests the potential application of boron nanowires in visible optical devices. Nonetheless, nanowire and nanorod structures based on boron carbide find their application in different areas, including field emission devices and thermoelectric energy converters, neutron adsorbent in nuclear industries, and especially in composite materials as reinforcing agents. ... 

Li-Hong, B. Chen, L. Yuan, T. Ji-Fa, T. Chao, H. Xing-Jun,W. Cheng-Min, S. and Hong-Jun, G. Synthesis and photoluminescence property of boron carbide nanowires. Chin. Phys. B, 2008,17,4585-4591. 

Y.Y. Ei, S.C. Chiu, SiC nanowires in large quantities synthesis, band gap characterization, and photoluminescence properties, J. Cryst. Growth 311 (2009) 1036-1041. 

Figure 11.2. Nanowire electronic and optical properties, (a) Schematic of an NW-FET used to characterize electrical transport properties of individual NWs. (inset) SEM image of an NW-FET two metal electrodes, which correspond to source and drain, are visible at the left and right sides of the image, (b) Current versus voltage for an n-type InP NW-FET. The numbers inside the plot indicate the corresponding gate voltages (Vg). The inset shows current versus Vg for Fsd of 0.1 V. (c) Real-color photoluminescence image of various NWs shows different color emissions, (d) Spectra of individual NW photoluminescence. All NW materials show a clean band-edge emission spectrum with narrow FWHM around 20nm. (See color insert.)...

The development of semiconducting nanowires is currently one of the most active research areas in nanoscience, because assemblies with tuneable properties, morphology and composition are obtainable relatively easily. Photoluminescent nanowires have been employed as optical devices, for example, Lee et have developed ZnO nanowires that... 

Table 7 provides a brief snnunary of the investigated properties of porous nanowires synthesized by MACE. For the applications listed, the most relevant handbook chapters are Porous Silicon and Solar Cells, Porous Silicon and Lithium Ion Batteries, Photoluminescence of Porous Silicon, and Thermoelectrics and Porous Silicon . 

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