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Nanowires properties

The enormous surface to volume ratio of the nanowires profoundly impacts the nanowire properties, making it imperative to control the surface chemistry. Several chemical routes have been explored for passivating or functionalizing nanowire surfaces. Hanrath and Korgel reported a comprehensive investigation of Ge nanowire surface chemistry modification including oxidation, sulfidation, hydride and chloride termination, and organic monolayer passivation... [Pg.3201]

Although all real surfaces have steps, they are not usually labelled as vicinal unless they are purposely misoriented in order to create a regular array of steps. Vicinal surfaces have unique properties, which make them useful for many types of experiments. For example, steps are often more chemically reactive than terraces, so that vicinal surfaces provide a means for investigating reactions at step edges. Also, it is possible to grow nanowires by deposition of a metal onto a surface of another metal in such a way that the deposited metal diflfiises to and attaches at the step edges [3]. [Pg.287]

In general, nanotechnology MBBs are distinguished for their unique properties. They include, for example, graphite, fullerene molecules made of various numbers of carbon atoms (C60, C70, C76, C240, etc.), carbon nanotubes, nanowires, nanocrystals, amino acids, and diamondoids [97]. All these molecular building blocks are candidates for various applications in nanotechnology. [Pg.232]

Attention has been given to the synthesis of bimetallic silver-gold clusters [71] due to their effective catalytic properties, resistance to poisoning, and selectivity [72]. Recently molecular materials with gold and silver nanoclusters and nanowires have been synthesized. These materials are considered to be good candidates for electronic nanodevices and biosensors [73]. [Pg.33]

Landman, U., Luedtke, W.D., Salisbury, B.E. and Whetten, R.L. (1996) Reversible Manipulations of Room Temperature Mechanical and Quantum Transport Properties in Nanowire Junctions. Physical Review Letters, 77, 1362-1365. [Pg.246]

Yonghong N, li Hua, Jin Lina, Hong Jianming (2009) Synthesis of ID Cu(OH)2 nanowires and transition to 3D CuO microstructures under ultrasonic irradiation, and their electrochemical property. Cryst Growth Des 9(9) 3868-3873... [Pg.266]

Thomas J. Webster, Nanophase Ceramics The Future Orthopedic and Dental Implant Material Yu-Ming Lin, Mildred S. Dresselhaus, and Jackie Y. Ying, Fabrication, Structure, and Transport Properties if Nanowires... [Pg.233]

Cui, Y. Duan, X. Huang, Y. Lieber, C. M. 2003. In Nanowires and Nanobelts-Materials, Properties, and Devices, edited by Wang, Z. L. Kluwer Academic/ Plenum Publishers, Boston, MA. [Pg.340]

Talapin, D. V. Black, C. T. Kagan, C. R. Shevchenko, E. V. Afzali, A. Murray, C. B. 2007. Alignment, electronic properties, doping, and on-chip growth of colloidal PbSe nanowires. J. Phys. Chem. C (in press). [Pg.346]

One-dimensional (ID) nanostructures have also been the focus of extensive studies because of their unique physical properties and potential to revolutionize broad areas of nanotechnology. First, ID nanostructures represent the smallest dimension structure that can efficiently transport electrical carriers and, thus, are ideally suited for the ubiquitous task of moving and routing charges (information) in nanoscale electronics and optoelectronics. Second, ID nanostructures can also exhibit a critical device function and thus can be exploited as both the wiring and device elements in architectures for functional nanosystems.20 In this regard, two material classes, carbon nanotubes2131 and semiconductor nanowires,32"42 have shown particular promise. [Pg.351]

Figure 11.2. Nanowire electronic and optical properties, (a) Schematic of an NW-FET used to characterize electrical transport properties of individual NWs. (inset) SEM image of an NW-FET two metal electrodes, which correspond to source and drain, are visible at the left and right sides of the image, (b) Current versus voltage for an n-type InP NW-FET. The numbers inside the plot indicate the corresponding gate voltages (Vg). The inset shows current versus Vg for Fsd of 0.1 V. (c) Real-color photoluminescence image of various NWs shows different color emissions, (d) Spectra of individual NW photoluminescence. All NW materials show a clean band-edge emission spectrum with narrow FWHM around 20nm. (See color insert.)... Figure 11.2. Nanowire electronic and optical properties, (a) Schematic of an NW-FET used to characterize electrical transport properties of individual NWs. (inset) SEM image of an NW-FET two metal electrodes, which correspond to source and drain, are visible at the left and right sides of the image, (b) Current versus voltage for an n-type InP NW-FET. The numbers inside the plot indicate the corresponding gate voltages (Vg). The inset shows current versus Vg for Fsd of 0.1 V. (c) Real-color photoluminescence image of various NWs shows different color emissions, (d) Spectra of individual NW photoluminescence. All NW materials show a clean band-edge emission spectrum with narrow FWHM around 20nm. (See color insert.)...
The fundamental physical properties of nanowire materials can be improved even more to surpass their bulk counterpart using precisely engineered NW heterostructures. It has been recently demonstrated that Si/Ge/Si core/shell nanowires exhibit electron mobility surpassing that of state-of-the-art technology.46 Group III-V nitride core/shell NWs of multiple layers of epitaxial structures with atomically sharp interfaces have also been demonstrated with well-controlled and tunable optical and electronic properties.47,48 Together, the studies demonstrate that semiconductor nanowires represent one of the best-defined nanoscale building block classes, with well-controlled chemical composition, physical size, and superior electronic/optical properties, and therefore, that they are ideally suited for assembly of more complex functional systems. [Pg.354]


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See also in sourсe #XX -- [ Pg.186 ]




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