Semiconducting nanowires

The formation of semiconducting copper telluride inside the spatially confined pores of MCM-41 may be a step towards the formation of semiconducting nanowires. 

Although laser ablation methods have been used to fabricate large quantities of single-crystalline semiconducting nanowires with high aspect ratios, the wires obtained are randomly oriented with a variety of morphologies... 

Chen G, Wu J, Lu QJ, Guitierrez HRH, Xiong Q, Pellen ME, Petko JS, Werner DH, Eklund PC (2008) Optical antenna effects in semiconducting nanowires. Nano Lett 8 1341-1346... 

Adu KW, Xiong Q, Gutierrez HR, Chen G, Eklund PC (2006) Raman scattering as a probe of phonon confinement and surface optical modes in semiconducting nanowires. Appl Phys A 85 287-297... 

The synthesis of crystalline Si and Ge semiconducting nanowires [160,161] may lead to improved electrical and optical devices, although this goal is proving... 

Ster, E., Klemic, J. F., Routenberg, D. A., Wyrembak, P. N., Turner-Evans, D. B., Hamilton, A. D., LaVan, D. A., Fahmy, T. M., Reed, M. A. (2007). Label-free immunodetection with CMOS-compatible semiconducting nanowires. Nature 445, 519-522. 

Semiconducting nanowires have been made from conventional semiconducting materials, such as gallium arsenide and also from less conventional materials [84]. 

The development of semiconducting nanowires is currently one of the most active research areas in nanoscience, because assemblies with tuneable properties, morphology and composition are obtainable relatively easily. Photoluminescent nanowires have been employed as optical devices, for example, Lee et have developed ZnO nanowires that... 

Semiconducting nanowires, nanorods, nanodots, nanocones, nanopins, etc. are interesting due to their broad range of applications. Electrochemically, the most easily fabricated semiconductors are Il-Vl semiconductors, for example, CdS, CdSe. There are three approaches for electrodeposition of semiconductors. The first method [131] is deposition of metal in alumina nanopores, followed by etching of alumina surface by phosphoric/chromic acid to access metallic surface for sulphur or arsenic vapour to attain metal sulphide or arsenide nanostructures. The second method deals with electrolysis of sulphuric acid, causing the sulphide atoms to be deposited in pores. 

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