Near-field Raman spectroscopy

Tip-Enhanced Near-Field Raman Spectroscopy and Imaging... 

Hayazawa, N., Yano, T., Watanabe, H., Inouye, Y, and Kawata, S. 2003. Detection of an individual single-wall carbon nanotube by tip-enhanced near-field Raman spectroscopy. Chem. Phys. Lett. 376 174-80. 

SNOM) or Near-field scanning optical microscopy (NSOM) Scanning near-field raman spectroscopy (SNRS)... 

Prikulis, J., et al. (2003) Large-area topography analysis and near-field Raman spectroscopy using bent fibre probes. JMicrosc 210 269-73. 

Saito Y, Verma P, Masui K, Inouye Y, Kawata S (2009) Nano-scale analysis of graphene layers by tip-enhanced near-field Raman spectroscopy. J Raman Spectrosc 40 1434—1440... 

Jorio A, Saito R, Dresselhauss G, Dresselhaus MS (2004) Determination of nanotube properties by Raman spectroscopy. Phil Trans R Soc Lond A 362 2311-2336 Kobayashi K, Takagi D, Ueno Y, Homma Y (2004) Characterization of carbon nanotubes suspended between nanostructures using micro-Raman spectroscopy. Physica E 24 26-31 Dresselhaus MS, Eklund P (2000) Phonons in carbon naotubes. Adv Phys 49 705-814 Anderson N, Hartschuh A, Novotny L (2007) Chirality changes in carbon nanotubes studied with near-field Raman spectroscopy. Nano Lett 7 577-582... 

Webster S, Bachelder DN, Smith DA (1998) Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy. Appl Phys Lett 72 1478... 

Near-field Raman Spectroscopy with or without Apertures... 

If one includes the employment of evanescent light waves in spectroscopic studies in the near-field area. Knoll and coworkers are among the first who reported on near-field Raman spectroscopy , though this approach was termed at that time (the early 1990s) as surface plasmon field-enhanced Raman spectroscopy and microscopy [104],... 

Near-field Raman spectroscopy was expected to become a very attractive approach because it offers chemical information from a subwavelength region and microscopic images of the distribution of species over a sample if it is viewed by its characteristic Raman fine. Most intriguing is that the spatial resolution is only hmited by the size of the aperture. 

A slightly different approach was followed by Grausem and coworkers, who employed near-field Raman spectroscopy to study liquid CCI4. The near-field probe had an aperture of < 50 nm. Because of the rapid decrease of the near field with distance from the aperture, only a small volume of liquid, containing only 0.4 attomol of CCI4, contributes to the Raman signal [112]. 

Other theoretical studies focus on the evaluation of selection rules for near-field Raman spectroscopy, which may be different from those of the (usually... 

S. Webster, D.N. Batchelder, and D.A. Smith, Submicron Resolution Measurement of Stress in Silicon by Near-Field Raman Spectroscopy, Appl. Phys. Lett. 

A. Hartschuh, N. Anderson, and L. Novotny, Near-Field Raman Spectroscopy Using a Sharp Metal Tip, J. Microsc. Oxford 210, 234 (2003)... 

Hartschuh A, Anderson N, Novotny L. (2003) Near-field Raman spectroscopy using a sharp metal iv. JMicroscopy 210 234-240. 

The future of Raman microspectroscopy is probably imaging and optical near-field nano-Raman spectroscopy [529], cfr. Chp. 5.5.2. While conventional laser Raman spectroscopy samples 10 g (mm ), /zRS handles 10 g (nm ) and near-field Raman spectroscopy 10 g (nm ). Mobile Raman microscopy (MRM) allows in situ Raman analysis [530]. One can expect further developments in the field of NIR multichannel Raman spectroscopy with the advent of 2D array detectors offering extended response in the NIR. With these 2D sensors it wiU become possible to apply in the NIR region the powerful techniques already developed in the visible, such as confocal line imaging techniques or multisite remote analysis with optical fibres. 

Figure 2 (A) Topography image recorded using NSOM showing a scratch on a silicon wafer surface. Inset Is an enlargement of the area that was Raman mapped. The scale bar Is 1 pm. An array of 26 by 21 spectra were recorded with step sizes of 154 nm and 190 nm in the Xand Ydireotions, respectively. Each spectrum took 60 s to acquire giving a total Image acquisition time of just over 9 h. In (B) the value of centre frequency of the silicon band was extracted and Is shown as a function of distance across the scratch the lateral position of the data points Is shown on the topographic cross section (C). Reprinted with permission from Webster S, Batcheldes DN and Smith DA (1998) Submicron resolution measurement of stress in silicon by near-field Raman spectroscopy. Applied Physics Letters , 1478-1480.

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