Microwave monolithic integrated circuit

Planar resonators and microstrip and coplanar transmission lines represent the passive elements in almost any integrated circuit technology at first, on chip integration in socalled mmics (monolithic microwave integrated circuits) with SiGe or m/v semiconducting active... 

The varied devices previously discussed may be combined with other active or passive circuit elements to make integrated circuits. The major of ICs using III-V materials are Digital ICs, monolithic microwave integrated circuits (MMICs) and opto-electronic integrated circuits (OEICs). 

GaAs MMICs Monolithic microwave integrated circuits have been fabricated using ion implantation. This renders feasible the fabrication of monolithic phased array radars. These circuits incorporate active devices, RF circuitry, and bypass capacitors (53-54). 

A. R. Jha and R. Goel, Monolithic Microwave Integrated Circuit (MMIC) Technology and Design, Norwood, MA Artech House (1989). 

Many of these steps include CVD, and CVD is now a major process in the fabrication of monolithic integrated circuits (IC), custom and semi-custom ASIC s, active discrete devices, transistors, diodes, passive devices and networks, hybrid IC s, opto-elec-tronic devices, energy-conversion devices, and microwave devices. 

MMICS were developed for DoD applications such as radar and weapons systems, but have found commercial inroads with cellular phone, satellite and transmit/receive modules for phased array radar and power amplifiers. They may also find great use in collision avoidance applications. MIMICs typically are made up of GaAs FET amplifiers, resistors, capacitors stripline inductors and other elements. The microwave/ millimeter-wave monolithic integrated circuits program was initiated principally by the... 

Abe, M., Itoh, T., Tamaura, Y. Gomi, M. (1988). Ferrite-organic multilayer film for microwave monolithic integrated circuits prepared by ferrite plating based on the spray-spin-coating method. Journal of Applied Physics, 63,3774-6. 

M. Abe, T. Itoh, Y. Tamaura, Y. Gotoh, and M. Gomi, Ferrite plating on GaAs for microwave monolithic integrated circuit, IEEE Trans. Magn., 23, 3736-3738 (1987). 

Introduction of microelectronic microwave components close to the antenna demands for appropriate interconnect technologies on textiles. This aspect has been dealt with in various publications, both with woven and non-woven materials However, only little data is available on the microwave properties of different woven and non-woven materials This deficiency must be overcome. Interconnection to the microwave monolithic integrated circuit is an important area of research and development. One possible approach is the implementation of ribbon type interconnects, which can efficiently be used for power supply and low ficquency outyut signals. 

In addition to the insertion and return losses, the performance of a circulator is described by its isolation, which is its insertion loss in the undesired direction. An isolator is just a three-port circulator with one of the ports terminated in a matched load as shown in the microstrip realization of Fig. 4.30(c). It is used in a transmission line to pass power in one direction but not in the reverse direction. It is commonly used to protect the output of equipment from high reflected signals. The heart of isolators and circulators is the nonreciprocal element. Electronic versions have been developed for microwave monolithic integrated circuits (MMlCs). A four-port version is called a duplexer and is used in radar systems and to separate the received and transmitted signals in a transceiver. 

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