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Mobilities dopants

Anion movement predominates in cases where a small mobile dopant, e.g., Cl-, is used. If large anion dopants such as polyelectrolytes are employed, then cation movement will predominate. [Pg.13]

The mobile dopant obeys the following diffusion/reaction equation ... [Pg.40]

Only few attempts have been made so far to use conducting polymers or other organic materials as contacts. However, TCNQ has been used recently to optimize the contact resistance between a-4T and Au contacts [333, 334]. The influence of TCNQ is assumed to make a layer in which a-4T is doped by TCNQ. Due to the fact that TCNQ is a larger molecule with extended 7r-system it does not diffuse in high electrical fields. (For the influence of mobile dopants on FET characteristics, compare [335]). [Pg.268]

The carriers in tire channel of an enhancement mode device exhibit unusually high mobility, particularly at low temperatures, a subject of considerable interest. The source-drain current is carried by electrons attracted to tire interface. The ionized dopant atoms, which act as fixed charges and limit tire carriers mobility, are left behind, away from tire interface. In a sense, tire source-drain current is carried by tire two-dimensional (2D) electron gas at tire Si-gate oxide interface. [Pg.2892]

The impurity atoms used to form the p—n junction form well-defined energy levels within the band gap. These levels are shallow in the sense that the donor levels He close to the conduction band (Fig. lb) and the acceptor levels are close to the valence band (Fig. Ic). The thermal energy at room temperature is large enough for most of the dopant atoms contributing to the impurity levels to become ionized. Thus, in the -type region, some electrons in the valence band have sufficient thermal energy to be excited into the acceptor level and leave mobile holes in the valence band. Similar excitation occurs for electrons from the donor to conduction bands of the n-ty e material. The electrons in the conduction band of the n-ty e semiconductor and the holes in the valence band of the -type semiconductor are called majority carriers. Likewise, holes in the -type, and electrons in the -type semiconductor are called minority carriers. [Pg.126]

FIGURE 3.46 In a p-type semiconductor, the electron-poor dopant atoms effectively remove electrons from the valence band, and the "holes" that result (blue band at the top of the valence band) enable the remaining electrons to become mobile and conduct electricity through the valence band. [Pg.251]

Some of the major questions that semiconductor characterization techniques aim to address are the concentration and mobility of carriers and their level of compensation, the chemical nature and local structure of electrically-active dopants and their energy separations from the VB or CB, the existence of polytypes, the overall crystalline quality or perfection, the existence of stacking faults or dislocations, and the effects of annealing upon activation of electrically-active dopants. For semiconductor alloys, that are extensively used to tailor optoelectronic properties such as the wavelength of light emission, the question of whether the solid-solutions are ideal or exhibit preferential clustering of component atoms is important. The next... [Pg.240]

Li, Y. Xiang, J. Qian, F. Gradecak, S. Wu, Y. Yan, H. Blom, D. A. Lieber, C. M. 2006. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. Nano Lett. 6 1468-1473. [Pg.375]

Aliovalent additives are often called donor dopants, when they tend to provide electrons and enhance intrinsic n-type semiconducting behavior, or acceptor dopants, when they tend to give a population of mobile holes and enhance /j-typc semiconducting behavior. The process of creating electronic defects in a crystal in this way is called valence induction. [Pg.392]

Indeed, the mobility of the entrapped dopant is crucial in promoting the reactivity of the final materials. Thus, provided that the dopant molecules are at the surface and enjoy enough freedom, high porosity will certainly promote reactivity by limiting intraparticle diffusion but that will not be the case if microporous xerogels of different HLB are compared (c/. entrapped lipase and tetra-//-propy 1 am monium perruthe-nate (TPAP) where ORMOSIL with the smaller pores are more reactive). [Pg.121]


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See also in sourсe #XX -- [ Pg.419 ]




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