Microelectronics transistors

L First manufacturing use of chemically amplified resists Plasma-developed resist first described X-ray proximity lithography demonstrated Bis-azide rubber resists introduced DNO-novolac resist for microelectronics introduced Photoresist technology first applied to transistor fabrication DNO-novolac resist patented by Kalle... 

Silicon shows a rich variety of chemical properties and it lies at the heart of much modern technology/ Indeed, it ranges from such bulk commodities as concrete, clays and ceramics, through more chemically modified systems such as soluble silicates, glasses and glazes to the recent industries based on silicone polymers and solid-state electronics devices. The refined technology of ultrapure silicon itself is perhaps the most elegant example of the close relation between chemistry and solid-state physics and has led to numerous developments such as the transistor, printed circuits and microelectronics (p. 332). 

The invention of the germanium transistor in 1947 [I, 2] marked the birth of modem microelectronics, a revolution that has profoundly influenced our current way of life. This early device was actually a bipolar transistor, a structure that is mainly used nowadays in amplifiers. However, logical circuits, and particularly microprocessors, preferentially use field-effect transistors (FETs), the concept of which was first proposed by Lilicnficld in 1930 [3], but was not used as a practical application until 1960 [4]. In a FET, the current flowing between two electrodes is controlled by the voltage applied to a third electrode. This operating mode recalls that of the vacuum triode, which was the building block of earlier radio and TV sets, and of the first electronic computers. 

Simple chemical systems with several components (HCl, KOH, KCl in hydrogel) were used for modeling mass and charge balances coupled with equations for electric field, transport processes and equilibrium reactions [146]. This served for demonstrating the chemical systems function as electrolyte diodes and transistors, so-called electrolyte-microelectronics . 

Meixner, R. Yildirim, F. Schliewe, R. Goebel, H. Bauhofer, W. Krautschneider, W. 2005. Low-temperature process for manufacturing all polymer thin-film transistors. Polytronic 2005—5th International Conference on Polymers and Adhesives in Microelectronics and Photonics, pp. 195-197. 

Manuelli, A. Knobloch, A. Bernds, A. Clemens, W. 2002. Applicability of coating techniques for the production of organic field effect transistors. 2nd International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, POLYTRONIC 2002. pp. 201-204. 

The rapid developments in the microelectronics industry over the last three decades have motivated extensive studies in thin-film semiconductor materials and their implementation in electronic and optoelectronic devices. Semiconductor devices are made by depositing thin single-crystal layers of semiconductor material on the surface of single-crystal substrates. For instance, a common method of manufacturing an MOS (metal-oxide semiconductor) transistor involves the steps of forming a silicon nitride film on a central portion of a P-type silicon substrate. When the film and substrate lattice parameters differ by more than a trivial amount (1 to 2%), the mismatch can be accommodated by elastic strain in the layer as it grows. This is the basis of strained layer heteroepitaxy. 

Martin-Femandez I, Sansa M, Esplandiu MJ et al (2010) Massive manufacture and characterization of single-walled carbon nanotube field effect transistors. Microelectron Eng 87 1554-1556... 

Solid-state chemical sensors are fabricated by the same technology used for microelectronic chips. The field effect transistor (FET) is the heart of commercially available sensors such as the pH electrode in Figure 15-24. 

Fig. 6. A bipolar transistor on a single silicon crystal. (RT. Kurnik, Chemical vapor deposition in microelectronics, Chemical Engineering Progress, vol. 81, pp. 30-35, May, 1985)...

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