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Electrolyte diode

Ionic Chemical Systems for Electrolyte Diode and Transistors... [Pg.567]

Simple chemical systems with several components (HCl, KOH, KCl in hydrogel) were used for modeling mass and charge balances coupled with equations for electric field, transport processes and equilibrium reactions [146]. This served for demonstrating the chemical systems function as electrolyte diodes and transistors, so-called electrolyte-microelectronics . [Pg.567]

Electronics Production of circuit boards (producing contacts in boreholes), modified electrolytic condensers, modified field effect transistors, molecular electronics (unidirectional conductors), photostructural lacquers based on ICPs (electron beam lithography), novel photoluminescent diodes (LED), data storage (e.g. spatially resolved eleclrochromics)... [Pg.888]

They may be classified by their structure, as coin, cylindrical and pin types. Table 5, 6, 7 respectively show their specifications. Applications of Li -(CF)n batteries as power sources are spreading from professional and business uses, such as in wireless transmitters and integrated circuit (IC) memory preservation, to consumer uses in electronic watches, cameras, calculators, and the like. Pin-type batteries are used for illumination-type fishing floats with a light-emitting diode. Coin-type batteries, which have a stable packing insulation, separator, and electrolyte for high... [Pg.39]

Tacconi NR, Chenthamarakshan CR, Rajeshwar K, Tacconi El (2005) Selenium-modified titanium dioxide photochemical diode/electrolyte junctions Photocatalytic and electrochemical preparation, characterization, and model simulations. 1 Phys Chem B 109 11953-11960... [Pg.203]

A piece of silicon immersed in an electrolyte behaves similarly to a Schottky diode, a metal-semiconductor contact, as discussed in Chapter 3. Under reverse... [Pg.5]

A Schottky diode is always operated under depletion conditions flat-band condition would involve giant currents. A Schottky diode, therefore, models the silicon electrolyte interface only accurately as long as the charge transfer is limited by the electrode. If the charge transfer becomes reaction-limited or diffusion-limited, the electrode may as well be under accumulation or inversion. The solid-state equivalent would now be a metal-insulator-semiconductor (MIS) structure. However, the I-V characteristic of a real silicon-electrolyte interface may exhibit features unlike any solid-state device, as... [Pg.41]

In this type of cell both electrodes are immersed in the same constant pH solution. An illustrative cell is [27,28] n-SrTiOs photoanode 9.5-10 M NaOH electrolyte Pt cathode. The underlying principle of this cell is production of an internal electric field at the semiconductor-electrolyte interface sufficient to efficiently separate the photogenerated electron-hole pairs. Subsequently holes and electrons are readily available for water oxidation and reduction, respectively, at the anode and cathode. The anode and cathode are commonly physically separated [31-34], but can be combined into a monolithic structure called a photochemical diode [35]. [Pg.124]

These systems are based on immersion of two photoactive electrodes in an electrolyte solution with connection via an external circuit. An overall solar-spectrum hydrogen conversion efficiency of 0.25% was found at zero bias for the n-Ti02/p-GaP cell. Nozik further designed a new type of cell, so-called photochemical diodes that do not require external wires and functions without electrical bias [26]. This device [26], consisting of a small sandwich-like structure, Fig.7.2, such as Pt/n-GaP, and n-Ti02/p-GaP connected through ohmic contacts, when suspended in an appropriate electrolyte causes decomposition of water upon exposure to light. [Pg.430]

Fig. 7.2 Sandwich (or stacked) configurations placed in an electrolyte solution (a) p-n type, (b) semiconductor-metal type photochemical diodes. Both p-type and n-type semiconductors are provided with ohmic contacts. In p-n type light is incident from both directions and ohmic contacts are connected through metal contacts. Fig. 7.2 Sandwich (or stacked) configurations placed in an electrolyte solution (a) p-n type, (b) semiconductor-metal type photochemical diodes. Both p-type and n-type semiconductors are provided with ohmic contacts. In p-n type light is incident from both directions and ohmic contacts are connected through metal contacts.
Magnetic Resonance Imaging and Tunable Diode Laser Absorption Spectroscopy for In-Situ Water Diagnostics in Polymer Electrolyte Membrane Fuel Cells... [Pg.201]

Fig. 6.13. Anodic current vs. potential curves for the process of BH4 ions oxidation on the bulk Cu electrode (curve 1 for comparison see curve 2 registered in the same conditions without BH4 ions), on the initial Ti02 electrodes (curve 7 for Ti02 with Nd = 10 19 cm 3 curve 8 for Ti02 with Nd 1018 cm 3) and on the Ti02 electrodes surface modified with different concentration of Cu (curve 3 - 1018 atoms/cm2, curves 4,5 - 1016 atoms/cm2, curve 6 - 1015 atoms/cm2). The values of Nd for Ti02 were 1018 cm 3 (curve 5) and 1019 cm 3 (curves 3,4,6). Curve 9 was obtained with the use of represented electrical circuit modeling the system Ti02 - Cu particles - electrolyte (D - solid-state Schottky diode R - electrical resistor WE, RE and CE - working, reference and counter electrodes, correspondingly). Electrolyte 0.1 M NaBH4 + 0.1 M NaOH. The potential sweep rate is 5 mV/s. Fig. 6.13. Anodic current vs. potential curves for the process of BH4 ions oxidation on the bulk Cu electrode (curve 1 for comparison see curve 2 registered in the same conditions without BH4 ions), on the initial Ti02 electrodes (curve 7 for Ti02 with Nd = 10 19 cm 3 curve 8 for Ti02 with Nd 1018 cm 3) and on the Ti02 electrodes surface modified with different concentration of Cu (curve 3 - 1018 atoms/cm2, curves 4,5 - 1016 atoms/cm2, curve 6 - 1015 atoms/cm2). The values of Nd for Ti02 were 1018 cm 3 (curve 5) and 1019 cm 3 (curves 3,4,6). Curve 9 was obtained with the use of represented electrical circuit modeling the system Ti02 - Cu particles - electrolyte (D - solid-state Schottky diode R - electrical resistor WE, RE and CE - working, reference and counter electrodes, correspondingly). Electrolyte 0.1 M NaBH4 + 0.1 M NaOH. The potential sweep rate is 5 mV/s.
Similar to indirect absorbance detection, indirect fluorescence has been employed to detect MPA, EMPA, IMPA, and PMPA, using tetrakis(4-sul fopheny 1 iporphine (TSPP) as the indirect probe (19). A violet diode laser operating at 415nm was used for excitation. Using an electrolyte composed of 50 tM TSPP and 5mM [Bios(2-hydroxyethyl)-amino]tris-(hydroxymethyl)methane (Bistris) at pH 7.2 under normal polarity, baseline separation was achieved in less than 2 min. A limit of detection of 0.1 xM (9ppb) for MPA was achieved. [Pg.396]

In the dark, the junction between an extrinsic (doped) semiconductor and a redox electrolyte behaves as a diode because only one type of charge carrier (electrons for n-type and holes for p-type) is available to take part in electron transfer reactions. The potential distribution across the semiconductor/electrolyte interface differs substantially from that across... [Pg.224]


See other pages where Electrolyte diode is mentioned: [Pg.110]    [Pg.423]    [Pg.191]    [Pg.259]    [Pg.278]    [Pg.305]    [Pg.98]    [Pg.277]    [Pg.229]    [Pg.242]    [Pg.269]    [Pg.121]    [Pg.444]    [Pg.41]    [Pg.42]    [Pg.48]    [Pg.216]    [Pg.156]    [Pg.217]    [Pg.244]    [Pg.164]    [Pg.156]    [Pg.172]    [Pg.80]    [Pg.110]    [Pg.96]    [Pg.871]    [Pg.169]    [Pg.276]    [Pg.161]    [Pg.3]    [Pg.261]    [Pg.362]    [Pg.397]   
See also in sourсe #XX -- [ Pg.567 ]




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Ionic Chemical Systems for Electrolyte Diode and Transistors

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