Lateral Overgrowth

M F-meeting front of two wings areas with high density of dislocations. Note high 

In most cases some misorientation (tilt/twist) is observed for two adjacent wings and additional new dislocations can be formed at the meeting front to accommodate tilt and twist. If such overgrown areas are used for future devices, then the meeting front of two wings needs to be omitted. Such nonuniformity of dislocation distribution in the overgrown layer is a limiting factor for device application. 

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In this sense, weeds are desirable and inevitable plants that colonize barren areas allowing for later overgrowth and succession. The appearance of patches... 

Figure 7.11. Schematic illustrations of (a), (b) epitaxial lateral overgrowth, ELO, and (c) the mechanism of formation of scepter quartz.

ST. Nishinaga, T. Nakano, and S. Zhang, Epitaxial lateral overgrowth of GaAs by LPE, JpmJ.Appl. Phys., 27,1988, L964-7... 

As we can see in TABLE 1 there are a number of centres that have been observed but not positively identified. As higher quality samples (e.g. homoepitaxial or lateral overgrowth films) become available more sophisticated techniques may also become applicable to resolve hyperfine structure and positively... 

It should be noted that a reduction in the threading dislocation density in GaN has been achieved through the application of selective area epitaxy and lateral epitaxial overgrowth ((LEO), also known as epitaxial lateral overgrowth (ELO), or epitaxial laterally grown GaN (ELOG)). This epitaxial technique is discussed in Datareview B2.10 in this book. 

B2.9 Selective area growth and epitaxial lateral overgrowth of GaN... 

FAB FEA FEB FET FFP FIB FIELO FIR FLAPW FP FP-LMTO FWHM fast atom beam free A exciton free B exciton field effect transistor far field pattern focused ion beam facet-initiated epitaxial lateral overgrowth far infrared reflectance full-potential linearised augmented plane wave Fabry-Perot full-potential linear muffin-tin orbital full wave at half maximum... 

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