Metal-oxide-silicon field effect example

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

En me sensors involving semiconductors are called enzyme field-effect transistors, ENFET, and, as their name implies, exploit the association of an en me with a field-effect transistor (Fl. The transistor has a metal oxide semiconductor field-effect transistor (MOSFET) structure, which is constructed from, for example, a p-type silicon substrate (Figure 4.30). This central channel is defined by placing two n-type semiconducting zones, called the source and the drain, on opposite sides of the substrate. A metallic gate is isolated from the channel by a thin insulating film (Si02), which also covers the upper face of the substrate. 

The attractiveness of silicon as a semiconductor material for ICs derives in part from the feet that this important material forms a naturally insulating surface oxide. Use is made of this fact, for example, in metal-oxide-semiconductor (MOS) field-effect transistors (FET), where the oxide serves as the gate insulator. No such naturally insulating oxide occurs with any of the compound semiconductors that offer improved performance over silicon in many device apphcations. Roberts et al. (38) demonstrated the feasibiUty of such metal-insulator-semiconductor (MIS) structures as FETs and chemical sensors shown schematically in Figure 1.23. These researchers... 

The MIS structure is an example of a semiconductor structure of high importance for sensor apphcations. This structure consists of three layers arranged as a stack. The sequence is metal (M), insulator (I) and semiconductor (S). Usually, the set-up starts with a substrate of a semiconductor material such as P-type silicon. This is covered first by a thin silicon oxide (Si02) layer formed by oxidation in an oxygen-containing atmosphere. Next, a thin metallic layer is applied by vapour deposition. Instead of MIS, often the abbreviation MOS is used, since the insulating layer (I) is often formed by an oxide (0). Thus, a field effect transistor (FET) in a MOS structure is called a MOSFET . 

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