Medium-energy ion scattering

MEIS also has the capacity to measure the surface and near-surface structure and composition [7], however it has benefits arising from physical attributes of coulomb 

The same expression for the scattered ion yield is valid for MEIS as for LEIS (Eq. 3.3.18). The difference from MEIS is both the validity of the Rutherford scattering cross section and much more reliable standards for calibrating a system. 

The most common use of MEIS is the analysis of the composition and structure of single crystal targets, in which the surface peak is the primary concern. In these situations, the energy spectrum looks similar to that of an LEIS spectrum with a series of peaks related to the mass of the target atom. In some cases, polycrystalline or amorphous materials have been analyzed, and the shape of the spectrum changes considerably, with broader peaks logging the concentration into the near-surface region [7j. 

In the case of individual peaks, the use of a calibration standard is slightly different from LEIS in that it may involve a different atomic species. Hence, for the reference it is 

the concentration of a from a measurement of the scattered ion yield is given by 

In a MEIS experiment, a collimated beam of monoenergetic protons or He-ions impinges onto a crystalline target along a known crystallographic direction. The energy and angle of the scattered ions are analyzed simultaneously and allow MEIS to measure atomic mass, depth, and surface structure. 

The current at sample is 0.1-1.0(lA dependent on beam energy and ion species while the beam spot size at sample is 1 mm x 0.5 mm. The sample size is kept between 5x5 mm to a maximum of 15 mm diameter which can be kept in the temperature range of 300-1,300 K in UHV environment. The sample 

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Busch B W and Gustafsson T 1998 Oscillatory relaxation of Al(110) reinvestigated by using medium-energy ion scattering Surf. Set 415 LI 074... 

Dodonoy A I, Mashkova E S and Molchanov V A 1989 Medium-energy ion scattering by solid surfaces. Ill ejection of fast recoil atoms from solids under ion bombardment Rad. Eff. Def Sol. 110 227-341... 

Medium-Energy Ion Scattering with Channeling and Blocking (MEIS)... 

Medium-Eneigy Ion Scattering Spectrometry Medium-Energy Ion Scattering... 

Medium development and feeding, for fermentation, 7 7 25—29 Medium energy dyes, 9 195—196 Medium-energy ion scattering (MEIS), 24 74... 

Figure 1.4 Comparison of the application ranges of techniques that are sensitive to nearsurface strains. Minimum detection limits are plotted against depth resolution of the measurement. XRD X-ray diffraction DOR differential optical reflectometry. RBS Rutherford back scattering MEIS medium energy ion scattering TEM transmission electron microscopy...

The surfaces of CU3AU alloy (bulk structure LI2) was studied thoroughly by various techniques and theoretical approaches, especially in relation to the order-disorder transition [52-63]. Recently, medium-energy ion-scattering spectroscopy (MEIS) measurements confirmed the stabilization of bulk-truncated equiatomic termination for this surface at low temperatures. Starting at about 500 K, the Au atoms in the surface layer begin to move to the second... 

An independent medium energy ion scattering (MEIS) study of the Cu(lll)(V3xV3)R30°-Sb reached the same conclusion that the surface alloy does involve occupation of hep hollow sites shortly after the original SXRD study [11], while the existence of the stacking fault in the... 

Recent studies which employ diffraction techniques, including medium energy ion scattering (MEIS) (Tromp et al., 1983), LEED (Holland et al., 1984) and grazing incidence X-ray scattering (Jedrecy et al., 1990), favor the asymmetric dimer model in which the top layer dimer is tilted by between 13.3 and 7.6 degrees. However, a kinematic LEED study (Zhao et al., 1991), photoemission studies (Johansson et al., 1990 Uhrberg and Hansson, 1991)... 

MBE MEIS MESFET MINDO MIS MOCVD MOMBE MOS MOSFET MOVPE molecular beam epitaxy medium energy ion scattering metal semiconductor field effect transistor modified intermediate neglect of differential overlap metal-insulator-semiconductor metal-organic chemical vapour deposition metal-organic molecular beam epitaxy metal-oxide-semiconductor metal-oxide-semiconductor field effect transistor metal-organic vapour phase epitaxy... 

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