Masked ions

High resolution negative resists are needed for masked ion beam lithography (MIBL) and for the fabrication of MIBL masks by E-beam lithography (EBL). The MOTSS copolymer resists were developed to obtain the resolution of fine features that a bilevel resist can best provide. The flexibility afforded by choosing the structure of the HS, the copolymer composition, and the molecular weight allows a resist to be tailored by simple synthesis adjustments to have the particular sensitivity and etch protection which best suits the application. 

Precipitation Electrodeposition Masking Ion Exchange Filtration Centrifugation Exclusion Chromatography Dialysis GLC, GSC, LLC, LSC Liquid-Liquid Extraction Distillation Sublimation Zone Electrophoresis Zone Refining ... 

A parasitic reaction occurs because in the experimental conditions, its conditional stability constant value allows its development. The converse is very interesting in analysis. Indeed, one can conceive that in some experimental conditions, the conditional stability constant value is too weak for the reaction it governs to noticeably occur. For example, in very alkaline medium, zinc ions give zincate ions, which inhibit their reaction with EDTA. Hence, there is a possibility here of masking ions to their reagents. These ions are said to be masked. The selectivity that can be achieved in a titration with EDTA is based on the same principle. These notions will be extended in Chapters 27-29, which are devoted to complexometry. 

In readily available (see p. 22f.) cyclic imidoesters (e.g. 2-oxazolines) the ot-carbon atom, is metallated by LDA or butyllithium. The heterocycle may be regarded as a masked formyl or carboxyl group (see p. 22f.), and the alkyl substituent represents the carbon chain. The lithium ion is mainly localized on the nitrogen. Suitable chiral oxazolines form chiral chelates with the lithium ion, which are stable at —78°C (A.I. Meyers, 1976 see p. 22f.). 

Probably the most extensively applied masking agent is cyanide ion. In alkaline solution, cyanide forms strong cyano complexes with the following ions and masks their action toward EDTA Ag, Cd, Co(ll), Cu(ll), Fe(ll), Hg(ll), Ni, Pd(ll), Pt(ll), Tl(lll), and Zn. The alkaline earths, Mn(ll), Pb, and the rare earths are virtually unaffected hence, these latter ions may be titrated with EDTA with the former ions masked by cyanide. Iron(lll) is also masked by cyanide. However, as the hexacy-anoferrate(lll) ion oxidizes many indicators, ascorbic acid is added to form hexacyanoferrate(ll) ion. Moreover, since the addition of cyanide to an acidic solution results in the formation of deadly... 

Masking by oxidation or reduction of a metal ion to a state which does not react with EDTA is occasionally of value. For example, Fe(III) (log K- y 24.23) in acidic media may be reduced to Fe(II) (log K-yyy = 14.33) by ascorbic acid in this state iron does not interfere in the titration of some trivalent and tetravalent ions in strong acidic medium (pH 0 to 2). Similarly, Hg(II) can be reduced to the metal. In favorable conditions, Cr(III) may be oxidized by alkaline peroxide to chromate which does not complex with EDTA. 

In resolving complex metal-ion mixtures, more than one masking or demasking process may be utilized with various aliquots of the sample solution, or applied simultaneously or stepwise with a single aliquot. In favorable cases, even four or five metals can be determined in a mixture by the application of direct and indirect masking processes. Of course, not all components of the mixture need be determined by chelometric titrations. For example, redox titrimetry may be applied to the determination of one or more of the metals present. 

Another type of demasking involves formation of new complexes or other compounds that are more stable than the masked species. For example, boric acid is used to demask fluoride complexes of tin(IV) and molybdenum(VI). Formaldehyde is often used to remove the masking action of cyanide ions by converting the masking agent to a nonreacting species through the reaction ... 

Destruction of the masking ligand by chemical reaction may be possible, as in the oxidation of EDTA in acid solutions by permanganate or another strong oxidizing agent. Hydrogen peroxide and Cu(II) ion destroy the tartrate complex of aluminum. 

Cyanide is frequently used as a masking agent for metal ions. The effectiveness of CN as a masking agent is generally better in more basic solutions. Explain the reason for this pH dependency. 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

Two newer areas of implantation have been receiving attention and development. Focused ion beams have been iavestigated to adow very fine control of implantation dimensions. The beams are focused to spot sizes down to 10 nm, and are used to create single lines of ion-implanted patterns without needing to create or use a mask. Although this method has many attractive features, it is hampered by the fact that the patterning is sequential rather than simultaneous, and only one wafer rather than many can be processed at any one time. This limits the production appHcations of the technique. 

Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final...

The chromium can be stabilized in a limited way to prevent surface fixation by addition of formate ions. The formate displaces the sulfate from the complex and masks the hydroxyl ions from forming the larger higher basicity complexes. This stabilization can then be reversed in the neutralization to a pH of about 4.0 and taimage becomes complete. This simple formate addition has decreased the time of chrome tanning by about 50% and has greatly increased the consistent quaHty of the leather produced. 

Many different materials can be used to spatially mask an implant on the semiconductor surface. Such masks include photoresist, dielectrics, and metals. In order to be an effective implant mask the material should be thick enough to prevent the implant from penetrating the mask and entering the sample. A minimum thickness for stopping 99.99% of the ions in the masking material is + 3.72Ai p (168). 

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