Ion implantation effects

Bohne et al. (2004) Molybdenum oxides, titanium oxides Phase transformation upon oxidation + + n.a. Ion implantation, effect of oxygen diffusivity on subsurface phase formation... 

Thirdly, we examined the ion-implantation effect on the bond between composite atoms of 813X4. When Fe, Mo and Hf atoms are supposed to be ion-implanted, d energy levels of these atoms appear in the energy gap or near the gap. A transfer of the Mulliken charge between the implanted atoms and surrounding atoms occurs due to the mixing between the d orbitals of the... 

Irradiation-Induced Modification in TM-Doped ZnO 6.2.3.1 Ion Implantation Effect... 

Tra.nsitorAmplifiers. Most gaUium-based field-effect transitor amplifiers (FETs) are manufactured using ion implantation (qv) (52), except for high microwave frequencies and low noise requirements where epitaxy is used. The majority of discrete high electron mobiHty transistor (HEMT) low noise amplifiers are currently produced on MBE substrates. Discrete high barrier transistor (HBT) power amplifiers use MOCVD and MBE technologies. 

Ion implantation (qv) has a large (10 K/s) effective quench rate (64). This surface treatment technique allows a wide variety of atomic species to be introduced into the surface. Sputtering and evaporation methods are other very slow approaches to making amorphous films, atom by atom. The processes involve deposition of a vapor onto a cold substrate. The buildup rate (20 p.m/h) is also sensitive to deposition conditions, including the presence of impurity atoms which can faciUtate the formation of an amorphous stmcture. An approach used for metal—metalloid amorphous alloys is chemical deposition and electro deposition. 

The shallow penetration of ion implantation would in itself make it appear useless as a technique for engineering appHcations however, there are several situations involving both physical and chemical properties in which the effect of the implanted ion persists to depths fat greater than the initial implantation range. The thickness of the modified zone can also be extended by combining ion implantation with a deposition technique or if deposition occurs spontaneously during the ion implantation process. In addition, ion implantation at elevated temperatures, but below temperatures at which degradation of mechanical properties could occur, has been shown to increase the penetration depths substantially (5). 

High temperature fatigue and fretting fatigue behavior has also been improved by implantation (113,114). This has been achieved by using species that inhibit oxidation or harden the surface. It is generally accepted that fretting behavior is closely coimected to oxidation resistance, perhaps due to third party effects of oxidation products. Oxidation resistance alone has also been improved by ion implantation (118—120). 

Although there has been theoretical and experimental interest in the effects of ion bombardment on materials since about 1960 (153), the growth in ion implantation technology and appHcations since then is due almost solely to the semiconductor (integrated circuit) industry. The advantages of ion implantation for semiconductor doping were first pointed out in 1955 (154), but these advantages were not widely accepted until about 1970. 

We believe that the luminescence at 1.0 eV is due to a structural damage induced by ion implantation rather than to a chemical doping effect, since the spectrum does not depend on the chemical species of the ion. These centers may be similar to the vacancies induced by 3-MeV electron-beam irradiation, as reported by Troxell and Watkins (1979), who find donorlike and acceptorlike levels —0.1 eV from the band edges. 

Ion implantation generates many dangling bonds that form centers for nonradiative recombination. These centers decrease the carrier lifetime and compete effectively with radiative transitions. However, after hydrogenation, since hydrogen ties dangling bonds, the luminescence process becomes more efficient. Furthermore, since the 1.0-eV emission is obtained even before hydrogen is introduced, the new radiative center may be formed due to residual hydrogen in the c-Si that combines with the implantation-induced defects. 

The effect of low energy (0.4 eV) H+ ion implantation into Si diffused with Ti, V or Cr has also been examined (Singh et al., 1986). The electrically active concentration of a Cr-related level at Ev + 0.30 eV was reduced after hydrogenation, although substantial loss of this level was also... 

See also Ion beams Ion-cut process Ion implantation systems advantages and limitations of, 14 429 case hardening by, 16 208-209 channeling effect and, 14 435 in compound semiconductor processing, 22 185-188... 

Radiation-curable epoxy acrylates, 10 450 Radiation cures, silicone network preparation via, 22 567-569 Radiation curing coatings, 7 133-135 of printing inks, 14 314 Radiation damage, ion implantation and, 14 435-436 Radiation drying coatings, 7 29-30 Radiation effects... 

Ion Beams. Several investigations have been made on the effects of ion beam irradiation on simple chemical systems. Polymers have also been irradiated with ion beams as an extension of studies on the ion implantation of other materials. To date, most of these studies have been concerned with gross effects, sometimes through to carbonisation (70) but here is a field which could have an industrial potential. 

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