Magnetron-sputtering

Figure Bl.17.8. Iron oxide particles coated with 4 nm of Pt in an m-planar magnetron sputter coater (Hennann and Mtiller 1991). Micrographs were taken in a Hitachi S-900 in-lens field emission SEM at 30,000 primary magnification and an acceleration voltage of 30 kV. Image width is 2163 nm.

Fig. 3. Schematics of magnetic confinement geometries (a) planar and (b) cylindrical geometries for magnetron sputtering sources (24) (c) open-ended...

TaN resistive films for hybrid circuits deposited by planar magnetron sputtering. 

Fig. 2— Schemetics of (a) magnetron sputtering and (b) unbalanced magnetron sputtering.

Fig. 19 —Cross-sectional morphologies of (a) TiN coating with hardness of 26 GPa, and (b) TiN/Si3N4 coating with optimum Si content of 10.8 at. % and hardness of 47.1 GPa deposited by reactive magnetron sputtering.

Fig. 22—Friction coefficients between WC ball and TiN/Si3N4 nanocomposite coatings as function of the Si content. The coatings were deposited by reactive magnetron sputtering. The friction coefficients of the TiN/Si3N4 coatings were obtained under the load of 20 N. In the case of the TiN coating and the Si3N4 coating, the load is 5 N, because the two coatings will fail and peel off from the substrate under the load of 20 N.

Fig. 23—The cutting life of the uncoated drill and the drills deposited with TiN coating and TiN/Si3N4 nanocomposite coatings drilling holes on quenched AISI 420 stainless steel. The coatings were deposited by reactive magnetron sputtering.

Monaghan, D. R, Teer, D. G., Laing, K. C., Efeoglu, I., and Ar-nell, R. D., Deposition of Graded Alloy Nitride Films by Closed Field Unbalanced Magnetron Sputtering," Surf. Coat. Technol., Vol. 5 9,1993, pp. 21 -25. 

Wang, X., Martin, P. J., and Kinder, T. J., Optical and Mechanical Properties of Carbon Nitride Films Prepared by Ion-Assisted Arc Deposition and Magnetron Sputtering, Thin SolidFilms, o. 256, Ho. 1-2,1995,pp. 148-154. 

The Fe-N /Ti-N nano-multilayers were prepared by using the magnetron-sputtering technique [34]. Si (111) wafers are used as the substrate. The multilayers have a total thickness of about 500 nm with alternately Fe-N and Ti-N layers (shown in Fig. 38). The Fe-N layer was the outermost layer and the Ti-N layer was the iimermost layer. The thickness of each layer was strictly controlled by the sputtering time. Table 4 shows the thickness of each layer of the samples. Because the multilayer sample was supposed to be used as the magnetic write head, the thickness of the nonferromagnetic Ti-N layer was not changed. 

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