Low-pressure chemical vapour deposition LPCVD

Different layers deposited by low pressure chemical vapour deposition (LPCVD) or by plasma enhanced chemical vapour deposition (PECVD) were examined as further inorganic gate dielectrics. Insulating layers of tetraethylor-thosilicate (TEOS) oxide, deposited by the thermal pyrolysis of the vapour... 

A combination of low-pressure chemical vapour deposition (LPCVD) and plasma-enhanced chemical vapour deposition (PEC VD) was used to create a new multilayer composite SiOx/poly(paraxyly 1 ene) material for hermetic sealing of miniaturised smart micro-electromechanical systems (MEMS) implants (Hogg et al., 2014). Tailoring the thickness ratio between the layers, the percolative pathway and thereby, the permeation for direct water exposure could be considerably reduced compared to conventional parylene-C single layers with the same thickness. 

In this work, our goal has been to create memory structures with a thin Si NC layer by low pressure chemical vapour deposition (LPCVD) using a SiO2 or a Si3N4 tunnel layer and a Si3N4 control layer, i.e. to fabricate MNOS and MNS structures with an embedded Si NC layer. 

The integrated thermopile (1.6x10 mm) was manufactured by the following method. A quartz chip (25.2 x 14.8 x 0.6 mm) was used as a substrate instead of a silicon wafer, in order to reduce the heat conductivity of the chip. A 0.5 jim thick layer of polysilicon was deposited using LPCVD (low-pressure chemical vapour deposition) onto the quartz substrate. The layer was boron-doped using... 

---