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Levels, concept

The tai et level concept was introduced and developed by the Association of Finnish Manufacturers of Air Handling Equipment (AFMAHE) in 1985. - Indoor climate target levels have been utilized in the ventilation of public buildings, apartments, and offices for years.The Finnish Institute of Occupational Health began to develop the concept for industrial ventilation in 1991.Tf The target level procedure for industrial air quality is described in more detail in Section 6.4. [Pg.359]

The setting of quantitative goals for indoor air quality also supports an organization s quality policy in the area of safety and health. Furthermore, the introduction of the target level concept for indoor quality will enhance the development of more advanced and efficient control technologies on a voluntary basis. One can assume that the diffusion of technology will make the present-day benchmark air quality common practice in, say, 10 to 20 years. [Pg.404]

This important technique is introduced at this elementary level to demonstrate characteristics of the confidence level concept that would otherwise remain unrecognized. Two models are necessary, one for the deterministic, the other for the stochastic aspects. [Pg.41]

The following are specific guiding principles for SAS programming in the pharmaceutical industry. These are high-level concepts that you should keep in mind while performing any of a broad range of tasks. [Pg.10]

Some years ago it was realized that the indoor inhalation of the short-lived radon daughters constitutes the most important contribution to the radiation exposure of the general population (Unscear, 1982). The working level concept has been introduced in the domestic environment due to the success of the concept in the occupational environment and due to a lack of experimental data on the relative and absolute magnitudes of the transformation and... [Pg.304]

The working level concept evaluates the unattached fraction and the activity median diameter in an indirect way, through the dose conversion factor. This paper will show that in the domestic environment this is mostly inaccurate to estimate the dose. [Pg.305]

Electrons and ions are the principal particles that play the main role in electrochemistry. This text, hence, emphasizes the energy level concepts of electrons and ions rather than the phenomenological thermodynamic and kinetic concepts on which most of the classical electrochemistry texts are based. This rationalization of the phenomenological concepts in terms of the physics of semiconductors should enable readers to develop more atomistic and quantitative insights into processes that occur at electrodes. [Pg.406]

Thermodynamic treatments in physical chemistry were effectively identical with the theory of the subjectin the nineteenth century. No oneunderstoodelectron transfer at interfaces at that time (J. J. Thompson did not discover the electron until 1897). But whereas the molecular kinetic approach gradually seeped into many parts of chemistry by the 1930s, the chemistry of electrode processes remained reluctantly bound up with the older thermodynamic viewpoint. The Faraday Society meeting in Manchester, U.K. in 1947 was a turning point in the application of a molecular-level concepts and even of quantum mechanics. By the mid-1950s, research papers in electrode process chemistry (except for those dealing with electroanalytica] themes)10 were fully kinetic. [Pg.340]

Each chapter in this book concludes with a list of Key Terms, Chapter Highlight review questions, numerous higher-level Concept Building questions, Hands-On Chemistry Insights, and, in some chapters, Supporting Calculations. [Pg.28]

The Safe Level Concept and the Rapid Field Method... [Pg.24]

SSE-CMM—System Security Engineering Capability Maturity Model, June 15, 2003, in line with ISO 15504-2 (SPICE) and CMM-I (following the processes and maturity level concept, but for security engineering instead of software development) (not safety application-specific)... [Pg.174]

The tidied up list of high-level concepts (with a tree diagram)... [Pg.217]

In the theory of non-equilibrium processes at solid state junction and also semiconductor-liquid interfaces, as developed in the previous section, frequently quasi-Fermi levels have been used for the description of minority carrier reactions [90, 91], A concept for a quantitative analysis for reactions at n- and p-type electrodes has been derived [92, 93], using the usual definition of a quasi-Fermi level (Eqs. (3a) and (3b)). Taking a valence band process as an example, the quasi-Fermi level concept can be illustrated as follows ... [Pg.132]

More insight into the quasi-Fermi level concept and its application has been obtained by the following example [93]. In Fig. 16, curve a) represents the current-potential curve as obtained with p-GaAs in an electrolyte without any redox system. The anodic current corresponds to the decomposition of GaAs. After addition of Cu " as an oxidizing agent, a corresponding cathodic current is visible (curve b)). At the mixed potential Um, i = 0.34 V (j == 0), the two currents are equal. The position of the quasi-Fermi level Ep, p in the p-electrode... [Pg.133]

These examples show very nicely how well the quasi-Fermi concept operates. There are various results given in the literature which can be interpreted on the basis of this concept. Especially the investigations of reactions of [FefCN) ] -/ - at GaAs and the etching behaviour confirm this model [97, 98]. The quasi-Fermi level concept also explains multiple step redox reactions. [Pg.134]

Interestingly, no charge transfer between S and Red occurs, although a considerable concentration of S has been found under stationary illumination. It should be mentioned that similar results have been obtained with p-type electrodes in the dark, which the same authors evaluated on the basis of the quasi-Fermi level concept. [Pg.142]

The direction of the electric field at the interface (Figure 6, Section 1.3.2) is such that the minority carriers (holes in this case) are swept to the surface and the electrons are driven to the rear ohmic contact. How fast the holes are drained away (by Faradaic reactions involving the redox electrolyte) will dictate how the Fermi levels compare with the equilibrium situation discussed earlier. The departure from equilibrium has been quantified in terms of the quasi-Fermi level concept discussed later. [Pg.2680]

The quasi-Fermi level concept for electron-transfer processes... [Pg.99]

In the present derivation we take a valence-band process as an example. According to the quasi-Fermi level concept, it is assumed that the same reaction with identical rates, i.e. equal currents, takes place at n- and p-type semiconductor electrodes of the same material if the density p of holes at the surface—or equivalently the quasi-Fermi levels Fp p —are equal at the surface of the two types of electrodes, as illustrated for an illuminated n-electrode and a p-electrode in the dark in Fig 2.21. This model is applicable if three conditions are fulfilled ... [Pg.99]


See other pages where Levels, concept is mentioned: [Pg.2627]    [Pg.536]    [Pg.166]    [Pg.735]    [Pg.304]    [Pg.263]    [Pg.210]    [Pg.33]    [Pg.23]    [Pg.58]    [Pg.621]    [Pg.536]    [Pg.506]    [Pg.108]    [Pg.216]    [Pg.105]    [Pg.132]    [Pg.140]    [Pg.151]    [Pg.161]    [Pg.2674]    [Pg.2292]    [Pg.39]    [Pg.162]    [Pg.162]    [Pg.102]   
See also in sourсe #XX -- [ Pg.355 ]




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