Layout draining

In addition to the information presented in this chapter, refer to Chapter 3, Equipment Configuration and Layout, for further discussions on shared vent and drain systems. 

Piping to Burners - First and second stage piping and headers, as well as the burner lines themselves, are sized to minimize pressure drop and velocity effects. Thus, maldistribution of flow to the burners will be minimized. The burner lines are fabricated from standard 1(X) mm pipe, and are arranged in a split grid layout with distribution headers and split feed lines on opposite sides, for both first and second stage burners. First and second stage headers must be sloped so that any condensate will drain back to the seal drums. However, the burner lines must be accurately installed in a horizontal plane. 

Holes for drainage must be adequate to drain the column in a reasonable time, yet not too large to interfere with tray action. Draining of the column through the trays is necessary before any internal maintenance can be started or before fluid services can be changed, when mixing is not desirable. The majority of holes are placed adjacent to the outlet or downcomer weir of the tray. However, some holes are placed in the downcomer inlet area or any suspected low point in the mechanical layout of the column. 

Before piping is installed, the layout should be analyzed to eliminate low points where liquid could collect and to provide drains where low points cannot be eliminated. A regular part of the operating procedure must be the periodic drainage of low points in the piping and separators, as well as inspection of automatic drain traps. 

The siting of the main process units will determine the layout of the plant roads, pipe alleys and drains. Access roads will be needed to each building for construction, and for operation and maintenance. 

Laboratory rooms intended for toxic work should be provided with adjacent shower and change facilities. The layout must not require freshly showered personnel to track back through the area that they might have just contaminated. All drains, including those in laboratory floors, should have deep traps and be directed to a toxic sump. Airlocks will help prevent toxic fumes from spreading to non-toxic areas in the event of a failure of a primary containment cabinet. Check valves in the incoming water lines will prevent contamination of potable water supplies when pressure is lost. 

Lockheed Martin Modified reverse assembly (multiple lines, compact layout, new drain and wash). Hydrolysis SCWO gas-phase chemical reduction (GPCR ). Hydrolysis, SCWO, GPCR . Hydrolysis GPCR to 5X. Hydrolysis GPCR to 5X. 

Figure 8-2. Typical Floor Drain and Trench Layout...

Fig. 125. Top. cross section of the transistor structure. The drain and source electrodes make ohmic contacts with the LB film. The carrier concentration and, therefore, the conductance of the LB film is controlled by the gate. Bottom schematic layout of the finger shaped drain and source electrodes [776]...

Fig. 10.1. Schematic illustrations of two device geometries for organic thin-film transistors. Part (a) shows the layout of a top contact device in which the source and drain electrodes are deposited on top of the...

Micro-contact printing can be used in plastic electronics to form high-resolution source/drain electrodes with short channel lengths [14]. Depositing an organic semiconductor on top of these electrodes yields a transistor with a layout like that... 

Figure 5.24 shows the layout of the FET structures used for mobility measurements. Field-effect mobilities /ipE can be calculated either from the saturation regime or from the linear regime of the drain-source current If s using the following equations [111] ... 

Fig. 7. (Top) Schematic layout of the TFT in the addressing matrix. Cross-hatched area is the drain pad and the dotted area is the source contact. The gap between the source and drain contact is bridged by the underlying gate electrode (broken line) and the a-Si H semiconductor (not shown). (Bottom) View of the finished matrix. The small dark strip is a-Si H. The bright central square is the drain pad, doubling as the optical reflector of the guest-host display. Note that the transistor completely surrounds the drain pad.

Source and drain contacts were deposited on top of the Pc films by thermal evaporation of Au (purity 99.99%) through shadow masks. The layout of the shadow mask yielded 8 independent OFETs on one sample. Samples are noted as A to F in the following, and distinct OFETs are noted as Al, A2, etc. 

Figure 28.3 SpinOFET layout, (a) The sample cross section demonstrates the OFET bottom contact configuration drain (D) and source (S) contacts are directly deposited on the gate insulator layer. Subsequently the organics are deposited on top. (b) The top view visualises the interdigitated arrangement of the contact stripes with different widths for source and drain.

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