Emitter layer

The most efficient devices were obtained using a multilayer approach, i. e. using several transport layers, emitter, and blocking layer. Thus, ultimately device optimization can be done similarly to small-molecule devices by selecting the best materials for their function rather than by generating materials, which fulfill all functions at once, but with limited performance ( single-layer approach). 

The most widely used experimental method for determining surface excess quantities at the liquid-vapor interface makes use of radioactive tracers. The solute to be studied is labeled with a radioisotope that emits weak beta radiation, such as H, C, or One places a detector close to the surface of the solution and measures the intensity of beta radiation. Since the penetration range of such beta emitters is small (a ut 30 mg/cm for C, with most of the adsorption occurring in the first two-tenths of the range), the measured radioactivity corresponds to the surface region plus only a thin layer of solution (about 0.06 mm for C and even less for H). 

The bipolar junction transistor (BIT) consists of tliree layers doped n-p-n or p-n-p tliat constitute tire emitter, base and collector, respectively. This stmcture can be considered as two back-to-back p-n junctions. Under nonnal operation, tire emitter-base junction is forward biased to inject minority carriers into tire base region. For example, tire n type emitter injects electrons into a p type base. The electrons in tire base, now minority carriers, diffuse tlirough tire base layer. The base-collector junction is reverse biased and its electric field sweeps tire carriers diffusing tlirough tlie base into tlie collector. The BIT operates by transport of minority carriers, but botli electrons and holes contribute to tlie overall current. 

Single layer OLEDs have been fabricated with a variety of emitter molecules and conjugated polymers such as poly(phenylene vinylene) (PPV). 

Fig. 5. Bipolar transistor (a) schematic and (b) doping profiles of A, arsenic ion implanted into the silicon of the emitter ( -type) B, boron ion implanted into the silicon of the base (p-type) C, antimony ion implanted into the buried layer ( -type) and D, the epi layer...

The nonquantitative detection of radioactive emission often is required for special experimental conditions. Autoradiography, which is the exposure of photographic film to radioactive emissions, is a commonly used technique for locating radiotracers on thin-layer chromatographs, electrophoresis gels, tissue mounted on sHdes, whole-body animal sHces, and specialized membranes (13). After exposure to the radiolabeled emitters, dark or black spots or bands appear as the film develops. This technique is especially useful for tritium detection but is also widely used for P, P, and 1. 

In an HBT the charge carriers from an emitter layer are transported across a thin base layer and coUected by a third layer called the coUector. A small base current is present which iacludes the carriers that did not successfully cross the base layer from the emitter to the coUector. The FET is a unipolar device making use of a single charge carrier in each device, either electrons or holes. The HBT is a bipolar device, using both electrons and holes in each device. The emitter and coUector layers are doped the same polarity n- or -type), with the base being the opposite polarity (p- or n-ty- e). An HBT with a n-ty e emitter is referred to as a n—p—n device ap—n—p device has a -type emitter. The n—p—n transistors are typicaUy faster and have been the focus of more research. For the sake of simplicity, the foUowing discussion wiU focus on n—p—n transistors. 

Although values of emittance and absorptance depend in very complex ways on the real and imaginaiy components of the refractive index and on the geometrical structure of the surface layer, the gener-ahzations that follow are possible. 

A transistor, or n-p-n junction, is built up of two n-type regions of Si separated by a thin layer of weakly p-type (Fig. e). When the emitter is biased by a small voltage in the forward direction and the collector by a larger voltage in the reverse direction, this device acts as a triode amplifier. The relevant energy level diagram is shown schematically in Fig. f... 

EL experiments showed that the yellow-emitting LEDs prepared from LPPP 12 exhibit quite remarkable characteristics (single layer construction ITO/LPPP 12/Ca quantum efficiency ca. 1.0%, applied voltage 4-6 V 135]). These figures are in the range of the best values described hitherto for polymeric emitters in a single layer arrangement, for example, poly(pcira-phenylenevinylene) PPV and PPV derivatives. 

Figure 9-3. Conventional multilayer light emission device (LED) indium tin oxide (ITO) electrode on a substrate, active layers A (hole transport), B (emitter), C (electron transport), and a niclat electrode. A possible encapsulation layer has been omitted, which would prevent the conjugated molecules from photo-oxidation.

Electron-Deficient Polymers - Luminescent Transport Layers 16 Other Electron-Deficient PPV Derivatives 19 Electron-Deficient Aromatic Systems 19 Full Color Displays - The Search for Blue Emitters 21 Isolated Chromophores - Towards Blue Emission 21 Comb Polymers with Chromophores on the Side-Chain 22 Chiral PPV - Polarized Emission 23 Poly(thienylene vinylene)s —... 

Suppression of the aggregate emission is possible in two quite different ways. At first, the aggregate emission could be almost completely shut out by simply diluting the LPPP 12 with a matrix polymer. LEDs with 1% LPPP 12 in poly(9-vinylcarbazole) PVK as emitter material are characterized by a pure blue light emission with a quantum efficiency of ca. 0.15% in single-layer configuration (lTO/1% LPPP 12 in PVK/Ca) 135],... 

However, the method will not enhance the external quantum yield of the LED, moreover, proper optical coupling between the layers has to be achieved in order not to decrease the QY loo much [61. One of the obvious problems is the principal requirement of having the ITO-covered glass substrate between the color converter and the cmitLer layer. This can also lead to color bleeding, an effect where the emitter layer excites not only the conversion layer, it is supposed to address but also neighboring ones. 

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